• 한국통신학회논문지
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• 제37C권9호
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• pp.802-810
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• 2012

본 논문은 RFID를 이용한 이동 로봇의 목표물 탐지 및 이동 시스템에 대해 소개한다. RFID는 전파를 이용하여 원거리에서 비접촉식으로 정보를 전달하는 것이 가능한 인식 시스템으로 RFID를 통해 로봇은 비전 등 다른 시스템의 도움 없이 간단하게 주변 물체를 인식하는 것이 가능하다. 하지만 실제 작업을 하기 위해서는 인식한 물체로 이동해야 하지만 현재의 RFID 시스템은 위치 정보를 제공하지 않는 문제가 있다. 본 논문에서는 전파의 도래 방향을 이용한 로봇 이동 시스템을 제안한다. 제안한 시스템은 두 축 안테나를 이용, 목표물에 부착된 RFID 태그로부터의 수신된 전파의 크기 차이를 이용하여 도래 방향을 측정한다. 로봇은 측정 방향으로 이동하는 것으로 지도나 기준 스테이션 등의 다른 시스템 없이 간단하게 물체로 이동하는 것이 가능하다. 하지만 전파는 금속이나 액체 등 주변 환경에 의해 쉽게 영향을 받아 측정 방향에 오차가 발생, 주변 장애물이 많은 복잡한 환경에서는 이동에 실패하는 문제가 있다. 이러한 문제를 해결하기 위해 본 논문에서는 g-filter 기반 오차 보정 알고리즘을 개발하였다. 개발한 알고리즘은 현재 측정값과 이전의 보정값의 분산값들의 차이를 이용, 현재의 측정값에 포함되어 있는 오차를 낮춤으로써 로봇이 방향을 잃지 않고, 이동하는 것을 가능하게 하였다. 시뮬레이션 및 실제 로봇을 이용한 실험 결과는 복잡한 환경에서도 로봇이 성공적으로 이동하는 것을 보여준다.

• 한국환경성돌연변이발암원학회지
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• 제22권3호
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• pp.187-198
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• 2002

Chlorpyrifos is an organophosphate insecticide and one of the most commonly and widely used insecticide. However, a little known about the dermal risk of chlorpyrifos on human being. Therefore, this study was conducted for the dermal risk assessment after exposure to chlorpyrifos in Korean farmers. First, skin irritation by chlorpyrifos (10 mg/$\textrm{cm}^2$, 50 mg/$\textrm{cm}^2$, 100 mg/$\textrm{cm}^2$, 250 mg/$\textrm{cm}^2$ in acetone) was determined in rabbits for 5 days considering the usage of chlorpyrifos short term highly exposure. The index of skin irritation by chlorpyrifos was increased in each dose and length of exposure dependent manners. Next, using benchmark dose (BMD$_{5}$) approach, the dose-response relationship was assessed to calculate the reference dose (RfD). The value of RfD was 2.84 $\mu\textrm{g}$/kg/day from 142.16 $\mu\textrm{g}$/kg/day BMD5 value divided uncertainty factor 50. Finally, we assessed human dermal risk of chlorpyrifos with exposure level and RfD. Skin absorbed levels were assumed with several exposure scenarios encounting the circumstances of exposure that application method, protection equipment and cloth, exposure time and exposure frequency during chlorpyrifos spraying. By the comparison of skin absorbed dose with the reference dose, it was identified that risk values (risk index) to skin chlorpyrifos exposure were 0.958 from the point of above results and it was recommended that the occurrence of hazard effect (skin irritation toxicity) of chlorpyrifos would not be expected. Risk index was smaller than 1 in the case of spraying vehicle mounted application, 1hour exposure time and wearing protective cloth exposure. Whereas, risk index was above 1 in the case of hand-held application, 2hour exposure time and wearing common cloth. Comparing two kinds of application method, total risk index of the hand held application (1.67) was higher than vehicle mounted (0.27). Therefore, chlorpyrifos skin exposure was mainly affected by application equipment and applied form. The results of risk assessment on the human dermal toxicity of chlorpyrifos should be required to control in keeping safety rules, skin surface area available for contact, spraying time ,and spraying frequency.y.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 춘계학술대회
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• pp.196-200
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• 2005

In this work, we investigated simple Aㅣ/TCO/a-Si:H(n)/c-Si(p)/Al hetero-junction solar cells prepared by low temperature processes, unlike conventional thermal diffused c-Si solar cells. a-Si:H/c-Si hetero-junction solar cells are processed by low temperature deposition of n-type hydrogenated amorphous silicon (a-Si:H) films by plasma-enhanced chemical vapor deposition on textured and flat p-type silicon substrate. A detailed investigation was carried out to acquire optimization and compatibility of amorphous layer, TCO (ZnO:Al) layer depositions by changing the plasma process parameters. As front TCO and back contact, ZnO:Al and AI were deposited by rf magnetron sputtering and e-beam evaporation, respectively. The photovoltaic conversion efficiency under AMI.5 and the quantum efficiency on $1cm^2$ sample have been reported. An efficiency of $12.5\%$ is achieved on hetero-structure solar cells based on p-type crystalline silicon.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권10호
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• pp.494-499
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• 2001

The effects of accelerated Ultraviolet (UV) radiation on High temperature vulcanized (HTV), Room temperature vulcanized (RTV) silicone rubber and two types of ethylene propylene diene terpolymer (EPDM) used for composite insulator were investigated by hydrophobicity class (HC), surface voltage decay after corona charging, SEM-ES, FTIR and XPS. The contact angle in two kinds of silicone rubber was scarcely change, but EPDM occurred to the loss of hydrophobicity followed by surface cracking and chalking. The surface voltage decay on UV-treated silicone rubber and EPDM showed a different decay trend with UV treatment. EDS and XPS analysis indicated that the oxygen content increased with UV treatment time in all samples. For silicone rubber, the oxidized groups of inorganic silica-like structure increased with UV treatment time. The oxidized carbon of C=O, O=C-O in EPDM increased. These oxidized surface for each material had different electrostatic characteristics, so deposited charges were expected to have different impacts on their surface hydrophobicity. The degradation mechanism based on our results was discussed.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2006년도 춘계학술대회 논문집
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• pp.109-112
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, $O_2$ plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.113-119
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• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.145-146
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, O2 plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• 센서학회지
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• 제22권2호
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• pp.105-110
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• 2013

We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 ${\mu}m$) showed a subs-threshold swing of 3.78 V/dec, a minimum off-current of $10^{-12}$ A, a threshold voltage of 0.41 V, a field effect mobility of $10.86cm^2/Vs$, and an on/off ratio of $9{\times}10^9$. From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.

• 한국전기전자재료학회논문지
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• 제19권8호
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• pp.701-706
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• 2006

In addition to its similarity to genuine diamond film, diamond-like carbon (DLC) film has many advantages, including its wide band gap and variable refractive index. In this study, DLC films were prepared by the RF PECVD (Plasma Enhanced Chemical Vapor Deposition) method on silicon substrates using methane $(CH_4)$ and hydrogen $(H_2)$ gas. We examined the effects of the post annealing temperature on the structural variation of the DLC films. The films were annealed at temperatures ranging from 300 to $900^{\circ}C$ in steps of $200^{\circ}C$ using RTA equipment in nitrogen ambient. The thickness of the film and interface between film and substrate were observed by surface profiler, field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), respectively. Raman and X-ray photoelectron spectroscopy (XPS) analysis showed that DLC films were graphitized ($I_D/I_G$, G-peak position and $sp^2/sp^3$ increased) ratio at higher annealing temperature. The variation of surface as a function of annealing treatment was verified by a AFM and contact angle method.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 D
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• pp.2353-2356
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• 2002

The increase of vehicles stagnations leads to the increasing attention to the way customers pay and a large number of projects on electronic cash system. Tranport system is comprised of a number of advanced technologies, including information processing, communications, control, and electronics. Recently many research on a system which provides contact in order to protect driver's vehicle passage have been carried out. And some potential problems from that system are being reviewed by electronic cash system. In this papers, we suggest RF protocol developing technology using the concept of electronic cash. ATM electronic cash developing is consist of component of pre-developed coin throw, integration of component using its, and production of more requirement-satisfactory ITS solution. Result increase 15$\sim$40% pre-type vehicles stagnations. Especially, we expect this proposed concept would be well adapted to our national environments.