• Title/Summary/Keyword: RF Plasma

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Surface modification of materials by thermal plasma (열플라즈마를 이용한 재료의 표면개질)

  • Kang, Seong-Pyo;Lee, Han Jun;Kim, Tae-Hee
    • Journal of the Korean institute of surface engineering
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    • v.55 no.6
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    • pp.308-318
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    • 2022
  • The surface modification and treatment using thermal plasma were reviewed in academic fields. In general, thermal plasma is generated by direct current (DC) and radiofrequency (RF) power sources. Thermal spray coating, a typical commercial process using thermal plasma, is performed by DC thermal plasma, whereas other promising surface modifications have been reported and developed using RF thermal plasma. Beyond the thermal spray coating, physical and chemical surface modifications were attempted widely. Superhydrophobic surface treatment has a very high industrial demand particularly. Besides, RF thermal plasma system for large-area film surface treatment is being developed. Thermal plasma is especially suitable for the surface modification of low-dimensional nanomaterial (e.g., nanotubes) by utilizing high temperature and rapid quenching. It is able to synthesize and modify nanomaterials simultaneously in a one-pot process.

PARAMETER STUDY ON PLASMA-POLYMERIZATION OF LANTHANIDE DIPHTHALOCYANINE FILMS FOR ELECTROCHEMICAL DEVICES

  • Kashiwazaki, Naoya;Yamana, Masao
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.739-744
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    • 1996
  • Lanthanide diphthalocyanines have interesting properties on electrochemical and chemical redox reactions. It is however, difficult to use because of thier short device life. Plasma-polymerization attends to improvement thier device life. Yb-diphthalocyanine ($YbPc_2$) polymer film was deposited in a parallel plate electrodes-type RF plasma reactor. $YbPc_2$ was sublimed into the argon plasma, and polymer film was obtained on a substrate. Radio frequency was constant of 13.56MHz. Pressure of argon gas, sublimation rate of $YbPc_2$ and RF power were variable parameters depending on film quality. Surface of polymer films include a lot of sub-micron order lumps. It was indicated that size of lumps depends on polymerization degree controled by parameters. Size of lumps and polymerization degree are increased with RF power. However, by the high RF power over 40W, polymerization degree is decreased with RF power and surface of film is rough. In condition of RF power is high, polymerization will compete with etching of film. We obtained good films for electrochromic display with RF power of 20W, argon gas pressure of 8.0 Pa and sublimationrate of $1.2 \times 10$ mol/min, and good films for gas sensor with RF power of 30W, argon gas pressure of 10.6Pa and sublimation rate of $1.2 \times 10$ mol/min.

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Luminescence Properties of Argon and Neon Gas Using an Inductively Coupled Plasma (유도결합형 Ar, Ne 가스에서의 플라즈마 발광 특성)

  • Her, In-Sung;Lee, Young-Hwan;Lee, Jong-Chan;Choi, Yong-Sung;Park, Dae-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.220-223
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    • 2004
  • Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. Optical characteristics significantly depend on the RF power and gas pressure of the plasma. This paper describes the measurement of luminance as a function of RF power and gas pressure with a goal of finding optimal operating conditions of the electrodeless lamp. The gas pressure was varied from 10[mTorr] to 300[mTorr] or 500[mTorr] and the RF power was varied from 10[W] to 200[W]. It was found that the luminance tends to be decreased when argon and neon pressure is increased, and the luminance is increased as RF power is increased. It was also found that the luminance per unit RF power is high when the argon and neon pressure is low and when the RF power is in the range of $30[W]{\sim}40[W]$ or 10[W].

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Oxygen Plasma Characterization Analysis for Plasma Etch Process

  • Park, Jin-Su;Hong, Sang-Jeen
    • Journal of the Speleological Society of Korea
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    • no.78
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    • pp.29-31
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    • 2007
  • This paper is devoted to a study of the characterization of the plasma state. For the purpose of monitoring plasma condition, we experiment on reactive ion etching (RIE) process. Without actual etch process, generated oxygen plasma, measurement of plasma emission intensity. Changing plasma process parameters, oxygen flow, RF power and chamber pressure have controlled. Using the optical emission spectroscopy (OES), we conform to the unique oxygen wavelength (777nm), the most powerful intensity region of the designated range. Increase of RF power and chamber pressure, emission intensity is increased. oxygen flow is not affect to emission intensity.

Luminance Efficacy of Inductively Coupled Argon Plasma (유도결합형 플라즈마에서의 아르곤 가스의 광 효율)

  • Lee, Young-Hwan;Pack, Kwang-Hyeon;Choi, Yong-Sung;Park, Dae-Hee
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.299-301
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    • 2004
  • Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. Optical characteristics significantly depend on the RF power and gas pressure of the plasma. This paper describes the measurement of luminous efficacy as a function of RF power and gas pressure with a goal of finding optimal operating conditions of the electrodeless lamp. The gas pressure was varied from 10 [mTorr] to 100 [mTorr] and the RF power was varied from 10 [W] to 120 [W]. It was found that the luminous flux tends to be decreased when argon pressure is increased, and the luminous flux is increased as RF fewer is increased. It was also found that the luminance efficacy is high when the argon pressure is low and when the RF power is low.

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Plasma Effects on the Growth of $In_{0.2}Ga_{0.8}N/GaN$ Heterostructures using Molecular Beam Epitaxy (분자선에피를 이용한 $In_{0.2}Ga_{0.8}N/GaN$ 이종접합구조의 성장에 미치는 플라즈마의 영향)

  • Shim Kyu-Hwan
    • Journal of the Korean Vacuum Society
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    • v.14 no.2
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    • pp.84-90
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    • 2005
  • The influence of plasma parameters on the growth of $In_{0.2}Ga_{0.8}N/GaN$ heterostructures has been investigated using plasma-assisted molecular beam epitaxy. Since plasma ejects plenty of energetic particles with different energy levels and flux density at various rf power levels, plasma modulated both growth rate and optical properties significantly. For instance, surface roughness and the emission spectrum of photoluminescence were degraded at low and high rf power. According to sharp interfaces between epitaxial films and strong peaks observed from photoluminescence spectra, our experimental setup presented optimal operation range of rf powers at around 400W. The phenomena could be explained by the presence of energetic particles modulating the rate of plasma stimulated desorption and surface diffusion, and energetic particles exceeding critical value resulted in the incorporation of defects at subsurface. The optimal rf power regime increased by 100W for $In_{0.2}Ga_{0.8}N/GaN$ growth in comparison with GaN. The effects of rf power were discussed in conjunction with kinetic processes being stimulated by energetic particles.

Optical Properties of Inductively Coupled Plasma with Ar Gas Pressure and RF Power (13.56MHz) (Ar 가스압력과 RF 전력변화 (13.56MHz)에 따른 유도결합형 플라즈마의 광학적 특성)

  • Her, In-Sung;Kim, Kwang-Soo;Choi, Yong-Sung;Lee, Jong-Chan;Park, Dea-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05e
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    • pp.92-95
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    • 2003
  • In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56MHz was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar-I line, luminance were investigated. At this time the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10~60m Torr, 10~300W respectively.

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Effects of Oxygen Surface Treatment on the Properties of TiO2 Thin Film for Self-cleaning Application (자기세정을 위한 스퍼터링 TiO2 박막의 산소 표면처리에 따른 특성)

  • Kim, Nam-Hoon;Park, Yong Seob
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.5
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    • pp.294-297
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    • 2016
  • Titanium oxide ($TiO_2$) thin films were fabricated by unbalanced magnetron (UBM) sputtering. The fabricated $TiO_2$ films were treated by oxygen plasma under various RF powers. We investigated the characteristics of oxygen plasma treatment on the surface, structural, and physical properties of $TiO_2$ films prepared at various plasma treatment RF powers. UBM sputtered $TiO_2$ films exhibited higher contact angle value, smooth surface, and amorphous structure. However, the rms surface roughness $TiO_2$ films were rough, and the contact angle value was decreased with the increase of the plasma treatment RF power Also, the hardness value of $TiO_2$ film as physical properties was slightly increased with the increase of the plasma treatment RF power. In the results, the performance of $TiO_2$ films for self cleaning critically depended on the with the plasma treatment RF power.

Power Dissipation in a RF Capacitively Coupled Plasma

  • Tran, T.H.;You, S.J.;Kim, J.H.;Seong, D.J.;Jeong, J.R.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.203-203
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    • 2013
  • Low pressure plasmas play a key role in many areas including electronic, aerospace, automotive, biomedical, and toxic waste management industries, and the advantages of the plasma are well known the processing procedure is established. However, the insight behavior of the discharges remains a mystery, even though a simple geometry as capacitive discharges. In this work, we measured RF power dissipation in capacitively coupled plasma (CCP) at various experiment conditions with potential probe and RF current probe. Through the results, we will have a clearer view of the inner nature of the CCP.

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The effects of plasma treatment of polyimide surface on the adhesion of chromium/polyimide (크롬/폴리이미드의 접착력에 미치는 폴리이미드 표면의 플라즈마 처리의 효과)

  • Chung, Tae-Gyeong;Kim, Young-Ho;Yu, Jin
    • Journal of the Korean institute of surface engineering
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    • v.26 no.2
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    • pp.71-81
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    • 1993
  • Thed effects of Ar or Oxygen RF plasma treatment on the adhesion behavior of Cr films to polyimide sub-strates have been investigated by using SEM, XRD, AES, and $90^{\circ}$peel test. By applying RF plasma treatment of the polyimide surface prior to metal deposition, the peel adhesion strength of Cu/Cr films sputtered onto the fully cured BPDA-PDA polyimide was highly increased from about 3g/mm to 90 ~ 100g/mm. Improved peel adhesion strength of Cr/polyimide interfaces due to RF plasma treatment was attributed to the contributions from surface cleaning, Cr-polyimide bonding at the interface, and force required for plastic deformation of the film. While the surface topology change of the polyimide caused by RF plasma treatment makes a little contri-bution to the improved adhesion.

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