• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.809-812
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• 2002

This paper presents the structures for a CPW shunt RF switch using MEMS(Micro Electro Mechanical System). Recent development in MEMS technology has made the design and fabrication of micro-mechanical switches as new switching elements. The micro-mechanical switches have low insertion loss, negligible power consumption, and good isolation compared to semiconductor switches. The fabricated structure shows an insertion loss of 2dB at 20GHz When a bias voltages of 12V is apply.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1972-1975
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• 2002

In this paper, we have proposed low temperature co-fired ceramic (LTCC) based packaging for RF MEMS devices. The packaging structure is designed and evaluated with 3D full field simulation. 50 ${\Omega}$ matched coplanar waveguide(CPW) transmission line is employed as the test vehicle to evaluate the performances of the proposed package structure. The line is encapsulated with the LTCC packaging lid and connected to the via feed line. To reduce the insertion loss due to the packaging lid, the cavity with via post is formed in the packaging lid. The performances of the package structure is simulated with the different cavity depth and via-to-via length. Simulation results show that the proposed package structure has reflection loss better than 20 dB and insertion loss lower than 0.1 dB from DC to 30 GHz with the cavity depth and via-to-via length of 300 ${\mu}m$ and 350 ${\mu}m$, respectively. To realize the designed package structure, the cavity patterning is tested using the sandblast of LTCC.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.250-254
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• 2003

A film bulk acoustic resonator (FBAR) device for 2 GHz radio frequency (RF) bandpass filter application is presented. This FBAR device consists of an aluminum nitride (AlN) film sandwiched between top(Al) and bottom(Au) electrodes and an acoustic multilayer reflector of a silicon dioxide/tungsten (SiO2/W). The A/N film deposited using a RF sputtering was observed to have small columnar grains with a strongly preferred orientation towards c axis. In addition to a high quality factor (4300), a large return loss of 37.19 dB was obtained.

• Food Science of Animal Resources
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• v.37 no.4
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• pp.518-528
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• 2017

Quality characteristics of frozen cylindrical pork loin were evaluated following different tempering methods: 27.12 MHz curved-electrode radio frequency (RF) at 1000 and 1500 W, and forced-air convection (FC) or water immersion (WI) at $4^{\circ}C$ and $20^{\circ}C$. The developed RF tempering system with the newly designed curved-electrode achieved relatively uniform tempering compared to a parallel-plate RF system. FC tempering at $4^{\circ}C$ was the most time-consuming process, whereas 1500 W RF was the shortest. Pork sample drip loss, water holding capacity, color, and microbiological quality declined after WI tempering at $20^{\circ}C$. Conversely, RF tempering yielded minimal sample changes in drip loss, microstructure, color, and total aerobic bacteria counts, along with relatively uniform internal sample temperature distributions compared to those of the other tempering treatments. These results indicate that curved-electrode RF tempering could be used to provide rapid defrosting with minimal quality deterioration of cylindrical frozen meat block products.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.33 no.4
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• pp.41-46
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• 2005

In this paper, a new method for suppressing microwelding on the RF MEMS (Radio Frequency Microelectromechanical System) direct contact switches is introduced. Two kinds of refractory metals, tungsten and molybdenum were coated onto the contact point of the switches and the effect of the coating was examined. The changes in insertion loss and isolation at the switch were measured by using network analyzer and power loss was evaluated by power measurement. The results revealed that while tungsten and molybdenum showed higher contact resistance than gold in low input power range, they enhanced the power handling capability and reliability of the switches in high input power region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.710-713
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• 2004

The design, simulation, modeling and measurement of a low temperature co-fired ceramic (LTCC) RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a Rx/Tx switching circuit and integrated low pass filter. The low pass filter function was designed to operate in th GSM band. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ nm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.889-895
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• 2002

Wafer level packaging is gain mote momentum as a low cost, high performance solution for RF-MEMS devices. In this work, the flip-chip method was used for the wafer level packaging of RF-MEMS devices on the quartz substrate with low losses. For analyzing the EM (electromagnetic) characteristic of proposed packaging structure, we got the 3D structure simulation using FEM (finite element method). The electric field distribution of CPW and hole feed-through at 3 GHz were concentrated on the hole and the CPW. The reflection loss of the package was totally below 23 dB and the insertion loss that presents the signal transmission characteristic is above 0.06 dB. The 4-inch Pyrex glass was used as a package substrate and it was punched with air-blast with 250${\mu}{\textrm}{m}$ diameter holes. We made the vortical feed-throughs to reduce the electric path length and parasitic parameters. The vias were filled with plating gold. The package substrate was bonded with the silicon substrate with the B-stage epoxy. The loss of the overall package structure was tested with a network analyzer and was within 0.05 dB. This structure can be used for wafer level packaging of not only the RF-MEMS devices but also the MEMS devices.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.1023-1028
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• 2012

A MMIC (Monolithic Microwave Integrated Circuit) mixer chip using the Schottky diode of an GaAs p-HEMT process has been developed for the I/Q demodulator of non-contact near field microwave probing system. A single balanced mixer type is adopted to achieve simple structure of the I/Q demodulator. A quadrature hybrid coupler and a quarter wavelength transmission line for 180 degree hybrid are realized with lumped elements of MIM capacitor and spiral inductor to reduce the mixer chip size. According to the on-wafer measurement, this MMIC mixer covers RF and LO frequencies of 1650MHz to 2050MHz with flat conversion loss. The MMIC mixer with miniature size of $2.5mm{\times}1.7mm$ demonstrates conversion loss below 12dB for both variations of RF and LO frequencies, LO-to-IF isolation above 43dB and RF-to-IF isolation above 23dB, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.7-12
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• 2008

This paper presents a lateral resistive contact RF MEMS switch using comb drive. Our goal was to fabricate the RF MEMS switch with high reliability and good RF characteristics for front end module in wireless transceiver system. Therefore, comb drive is used for large contact force in order to achieve low insertion loss and small off-state capacitance in order to achieve high isolation. The single crystalline silicon is used for mechanical reliability. As a result, the developed switch showed insertion loss less than 0.44 dB at 2 GHz, isolation greater than 60 dB, and low actuation voltage at 26 V.