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Fabrication and Properties of SCT Thin Film by RF Sputtering Method  

김진사 (광운대 전기공학과)
김충혁 (광운대 전기공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.52, no.10, 2003 , pp. 436-440 More about this Journal
Abstract
The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.
Keywords
Thin Film; Deposition Condition; Dielectric Constant; Dielectric Loss;
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