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FBAR Device with Thin AlN Piezoelectric Film for 2 GHz RF Bandpass Filter Applications  

Giwan Yoon (Information and Communication University)
Munhyuk Yim (Information and Communication University)
Dongkyu Chai (Information and Communication University)
Kim, Sanghee (Kwangwoon University)
Kim, Jongheon (Kwangwoon University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.7, no.2, 2003 , pp. 250-254 More about this Journal
Abstract
A film bulk acoustic resonator (FBAR) device for 2 GHz radio frequency (RF) bandpass filter application is presented. This FBAR device consists of an aluminum nitride (AlN) film sandwiched between top(Al) and bottom(Au) electrodes and an acoustic multilayer reflector of a silicon dioxide/tungsten (SiO2/W). The A/N film deposited using a RF sputtering was observed to have small columnar grains with a strongly preferred orientation towards c axis. In addition to a high quality factor (4300), a large return loss of 37.19 dB was obtained.
Keywords
FBAR; AlN film; Multilayer Reflector; Return Loss; Quality Factor;
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