• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.12
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• pp.24-30
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• 2010

The super-resolution near-field structure (super-RENS) disc system is the most promising one for next-generation optical data storage systems to succeed the Blu-ray disc (BD). In this paper, we apply the simplicial canonical piecewise-linear (SCPWL) model to modeling super-RENS read-out signals since reliable and accurate channel modeling is essential for performance analysis and development of equalizers for super-RENS systems. The validity of this model is verified using radio frequency (RF) signal samples obtained from a super-RENS disc, The experiment results on modeling indicate that the SCPWL model can be efficiently utilized for the nonlinear modeling of the super-RENS systems.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2354-2356
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• 2005

DGS 구조의 RF 소자 부품 개발에 응용하기 위해서는 DGS 구조의 대한 정확한 모델링과 등가회로 파라미터의 추출방법에 대한 연구가 선행되어야 한다. 기존의 연구에서는 집중정수소자 모델링 방법이 연구되어 필터, 스위치 통과 같은 RF 및 마이크로파대 부품에 대한 응용사례가 발표되었다. 그러나 다른 부품들과 결합되는 복합적인 DGS구조를 이용한 소자의 개발 시 기존에 제시되었던 집중정수 소자를 이용한 2-포트 등가 모델링 방법의 적용은 위상이나 전기적 길이의 정보와 같은 물리적인 의미를 표현하기에는 부족한 단점이 있었다. 또한 집중정수 소자를 이용한 2-포트 모델의 단점 중 하나는 등가모델로부터 DGS 식각면의 물리적 크기를 결정하기가 어렵다는 점이다. 물론 특정기판의 정보를 갖는 DGS 구조의 식각의 크기의 변화에 따른 반복적 전자장 시뮬레이션의 결과 데이터로부터 식각 치수의 결정이 가능하나 시간 및 많은 노력이 필요하였다. 따라서 본 논문은 다른 부품과의 결합에 따른 DGS 접지면의 전기적 특성 정보의 추출과 다른 주파수 대역에서의 등가회로 응용성에 대한 문제점을 해결하기 위해서 DGS의 구조적 접근 방법으로 새로운 모델링 방법을 제안하였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.5 s.108
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• pp.408-415
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• 2006

This paper suggests an improved system-level model of RF power amplifiers(PAs) including memory effects, and validates the suggested model by analyzing the power spectral density of the output signal with a predistortion linearizer. The original three-box(Wiener-Hammerstein) model uses input and output filters to capture RF frequency response of PAs. The adjacent spectral regrowth that occurs in three-box model can be perfectly removed by Hammerstein structure predistorter. However, the predistorter based on Hammerstein structure achieves limited performance in real PA applications due to other memory effects except RF frequency response. The spectrum of the output signal can be predicted accurately using the suggested model that changes a memoryless block in a three-box model with a memory polynomial. The proposed model accurately predicts the output spectrum density of PA with Hammerstein structure predistorter with less than 2 dB errors over ${\pm}30$ MHz adjacent channel ranges for IEEE 802.11 g WLAN signal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.622-628
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• 2001

We developed 1- and 2-dimensional fluid model for the analysis of a capacitively coupled Ar RF(Radio Frequency) glow discharge. This discharge is in pure Ar gas at the pressure 100[mTorr], frequency 13.56[MHz] and voltage amplitude 120[V}. This model is based on the equations of continuity and electron energy conservation coupled with Poison equation. 2-dimensional model is simulated on the condition of GEC(Gaseous Electronic Conference cell). The geometry of the discharge chamber and the electrodes used in the model is cylindrically simmetric; tow cylinders for the electrodes are surrounded by the grounded chamber. It is shown that 1-dimensional model is very useful on the understanding of RF glow discharge property and of the movement of charged particles. 2-dimensional model predicts off-axis maximum structure as in the experiments and has the results in qualitatively and quantitatively good agreement with the experiments. Effects of dc self-bias voltage, guard ring and reactor geometry is discussed.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.1
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• pp.49-57
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• 2002

Including RF Package inductance, substrate coupling through conductive silicon(Si)-substrate is modeled and quantitatively characterized. 2-port substrate coupling model is extended for the characterization of multi-port substrate coupling between digital circuit block and analog/RF circuit block. Furthermore, scalable parameter extraction model is developed. Multi-port substrate coupling can be investigated by linearly superposing a frequency-dependent 2-port substrate coupling model using scalable parameters. In addition, Substrate coupling including RF package inductance effect is quantitatively investigated. It is shown that package effect increases substrate coupling and shifts a characteristic frequencies(i.e., poles) to the higher frequency range. The proposed methodology can be efficiently used to the mixed-signal circuit performance verification.

• Journal of IKEEE
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• v.19 no.3
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• pp.371-377
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• 2015

This paper is about the RF transceiver designed and implementation for common data link. The trasmitter is configured as a frequency up-converter, a power amplifier and a duplexer. The receiver is configured as a duplxer, a frequency down-converter and a low noise amplifier. The maximum transmission distance, the reception sensitivity is designed to meet the electrical and temperature characteristics and the like. Using a modeling and simulation in order to meet the requirements of the RF transceiver has been designed and implemented. Transmitting output power and Noise Figure has been measured with 38.58dBm and 5.5dB, respectively. All of the electrical and temperature specifications was meet. Was confirmed all of the requirement specification by electrical characteristics test and temperature characteristics test.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.12
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• pp.2655-2661
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• 2009

In this paper, an accurate noise parameters for thermal noise modeling of short channel MOSFET is derived and extracted. Fukui model for calculating the noise parameters of a MOSFET is modified by considering effects of parasitic elements in short channel, and it is compared with conventional noise model equation. In addition, for obtaining the intrinsic noise sources of devices, noise parameters(minimum noise figure $F_{min}$, equivalent noise resistance $R_n$ optimized source admittance $Y_{opt}=G_{opt}+B_{opt}$) in submicron MOSFETs is extracted. With this extraction method, the intrinsic noise parameters of MOSFET without effects of probe pad and extrinsic parasitic elements from RF noise measurements can be directly obtained.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.2
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• pp.299-308
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• 2008

This paper proposes a new design specification-based band fault modelling technique that can test design specification in a time domain. The band fault model is defined and the conditions of band fault model are gained as normal operation regions are defined. And the conditions of band fault model are used in a 5.25GHz low noise amplifier, then 9 band fault models that can detect hard and parametric faults of active and passive devices are obtained.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2002.11a
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• pp.363-370
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• 2002

A substrate network model characterizing substrate effect of submicron MOS transistors for RF operation and its parameter extraction with physically meaningful values are presented. The proposed substrate network model includes a single resistance and inductance originated from ring-type substrate contacts around active devices. Model parameters are extracted from S-parameter data measured from common-bulk configured MOS transistors with floating gate and use where needed with out any optimization. The proposed modeling technique has been applied to various-sized MOS transistors. Excellent agreement the measurement data and the simulation results using extracted substrate network model up to 30GHz.

• Proceedings of the Korea Society for Industrial Systems Conference
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• 2002.11a
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• pp.363-370
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• 2002

A substrate network model characterizing substrate effect of submicron MOS transistors for RF operation and its parameter extraction with physically meaningful values are presented. The proposed substrate network model includes a single resistance and inductance originated from ring-type substrate contacts around active devices. Model parameters are extracted from S-parameter data measured from common-bulk configured MOS transistors with floating gate and use where needed with out any optimization. The proposed modeling technique has been applied to various-sized MOS transistors. Excellent agreement the measurement data and the simulation results using extracted substrate network model up to 30㎓