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http://dx.doi.org/10.6109/JKIICE.2009.13.12.2655

Analysis and extraction method of noise parameters for short channel MOSFET thermal noise modeling  

Kim, Gue-Chol (목포해양대학교 해양전자통신공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.13, no.12, 2009 , pp. 2655-2661 More about this Journal
Abstract
In this paper, an accurate noise parameters for thermal noise modeling of short channel MOSFET is derived and extracted. Fukui model for calculating the noise parameters of a MOSFET is modified by considering effects of parasitic elements in short channel, and it is compared with conventional noise model equation. In addition, for obtaining the intrinsic noise sources of devices, noise parameters(minimum noise figure $F_{min}$, equivalent noise resistance $R_n$ optimized source admittance $Y_{opt}=G_{opt}+B_{opt}$) in submicron MOSFETs is extracted. With this extraction method, the intrinsic noise parameters of MOSFET without effects of probe pad and extrinsic parasitic elements from RF noise measurements can be directly obtained.
Keywords
H.264; Encoder; DMAC; Motion estimation; Intra Prediction; MOSFET; RF; CMOS;
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