• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.1009-1012
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• 2000

In this paper, we have designed and fabricated power PHEMT’s with an unit gate width of 80$\mu\textrm{m}$ and 4 fingers, and MIMIC power amplifiers using the PHEMT’s as well. The PHEMT’s have a 0.2$\mu\textrm{m}$ gate length and source to drain spacing of 3$\mu\textrm{m}$. The characteristics of the fabricated PHEMT’s are 4.08dB of S$\sub$21/ gain at the 35GHz and 317mS/mm of gm, and 62GHz of f$\sub$T/ and 120GHz of f$\sub$max/. The designed and fabricated MIMIC’s power amplifiers with 6 PHEMT’s and MIN capacitors were fully passivated by 1000 Α of Si$_3$N$_4$ film for higher performance and surface protects. The chips were processed using the MINT processes, and size was 3.25 ${\times}$ 1.8$\textrm{mm}^2$. The fabricated MIMIC power amplifiers have RF characteristics such as 11.25dB of S$\sub$21/ gain, 11.37dB of input return-loss and 12.69dB of output return-loss at the 34.55GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.182-188
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• 2004

We demonstrate a $2.1\;{\times}\;1.0\;{\times}\;0.1cm^3$ sized compact transmitter using LTCC System-in-Package (SiP) technology for 60GHz-band wireless communication applications. For low-attenuation characteristics and resonance suppression of the SiP, we have proposed and demonstrated a coplanar double wire-bond transition and novel CPW-to-stripline transition integrating air-cavities as well as novel air-cavities embedded CPW line. The fabricated transmitter achieves an output of 13dBm at a RF frequency of 62GHz, an IF frequency of 2.4GHz, and a LO frequency of 59.6GHz. The up-conversion gain is 11dB, while the LO signal is suppressed with the image rejection mixer below -21.4dBc, and the image and spurious signals are also suppressed below -31dBc.

• Korean Journal of Optics and Photonics
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• v.11 no.6
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• pp.423-428
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• 2000

We have demonstrated a -8 dB additional reduction in the intensity sidelobe of an apodized-interaction-strength guide-wave acousto-optic filter with a center passband of 1551.6 nm. Acoustic-intensity weighting was achieved by launching a surface acoustic wave (SAW) beam in a straight acoustic waveguide, and gradually transferring this SAW intensity to the active device, and back out, by evanescent-wave coupling across a 50 !lm barrier over a 19 rom interaction length. The intensity sidelobe was -4.27 dB for an unapodized filter with abmpt onset and cutoff of the interaction, but sidelobes were reduced to at most -12.68 dB for a SAW intensity with raised-cosine weighting. The RF driving power was 17.78 mW. A linear tuning rate of 8.86 nmIMHz and a spectral width of -1.7 nm were demonstrated. rated.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.11
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• pp.101-106
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• 2014

This paper presents a wide dynamic range radio-frequency (RF) root-mean-square (RMS) power detector using an automatic gain control (AGC) loop. The AGC loop consists of a variable gain amplifier (VGA), RMS conversion block and gain control block. The VGA exploits dB-linear gain characteristic of the cascade VGA. The proposed circuit utilizes full-wave squaring and generates a DC voltage proportional to the RMS of an input RF signal. The proposed RMS power detector operates from 500MHz to 5GHz. The detecting input signal range is from 0 dBm to -70 dBm or more with a conversion gain of -4.53 mV/dBm. The proposed RMS power detector is designed in a 65-nm 1.2-V CMOS process, and dissipates a power of 5 mW. The total active area is $0.0097mm^2$.

• Journal of the Korea Society of Computer and Information
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• v.27 no.3
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• pp.71-77
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• 2022

In this paper, we propose 1×2 array antenna with dual linear polarization characteristics for mmWave band operation. The proposed antenna is designed two microstirp feeding structure and FR-4 substrate, which is thickness 0.4 mm, and the dielectric constant is 4.3. The size of 1×2 array antenna is 2.33 mm×2.33 mm, and total size of array antenna is 13.0 mm×6.90 mm. From the fabrication and measurement results, bandwidths of 1.13 GHz (28.52~29.65 GHz) for port 1 and 1.08 GHz (28.45~29.53 GHz) for port 2 were obtained based on the impedance bandwidth. Cross polarization ratios are obtained from 7.68 dBi to 16.90 dBi in case of vertical polarization, and from 7.46 dBi to 15.97 dBi in case of horizontal polarization for input port 1, respectively. Also, cross polarization ratios are obtained from 8.59 dBi to 13.72 dBi in case of vertical polarization and from 9.03 dB to 14.0 dB in case of horizontal polarization for input port 2, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.48-53
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• 2008

In this paper, we developed the MMIC low noise amplifier using 100 nm metamorphic HEMTs technology in combination with coplanar circuit topology for 94 GHz applications. The $100nm\times60{\mu}m$ MHEMT devices for the MMIC LNA exhibited DC characteristics with a drain current density of 655 mA/mm, an extrinsic transconductance of 720 mS/mm. The current gain cutoff frequency $(f_T)$ and maximum oscillation frequency $(f_{max})$ were 195 GHz and 305 GHz, respectively. The realized MMIC LNA represented $S_{21}$ gain of 14.8 dB and noise figure of 4.6 dB at 94 GHz with an over-all chip size of $1.8mm\times1.48mm$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.8-13
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• 2006

Recent RF SAW filters are made using a HTCC package with a CSP(chip scale Package) technology. This paper describes a development of a new $1.4{\times}1.1\;and\;2.0{\times}1.4mm$ RF SAW liters made by PCB substrate instead of HTCC package, and this technology can reduce the cost of materials down to 40%. We have investigated the multi-layered PCB substrate structures and raw materials to find out the optimal flip-bonding condition between the $LiTaO_3$ wafer and PCB substrates. Also the optimal materials and processing conditions of epoxy laminating film were found out through the experiments which can reduce the bending moment caused by the difference of the thermal expansion between the PCB substrate and laminating film. The new PCB SAW filter shows good electrical and reliability performances with respect to the present SAW filters.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.107-112
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• 2011

This paper is for improving the RF frequency performance of a fabricated 100nm ${\Gamma}$-gate MHEMT, scaling down vertically for the epitaxy-structure layers of the device. Hydrodynamic simulation parameters are calibrated for the fabricated MHEMT with the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure grown on the GaAs substrate. With these calibrated parameters, simulations for the vertically-scaled epitaxial layers of the device are performed and analyzed for DC/RF characteristics, including the quantization effect due to the thickness reduction of InGaAs channel layer. A newly designed epitaxy-structure device shows higher extrinsic transconductance, $g_m$ of 1.556 S/mm, and higher frequency performance, $f_T$ of 222.5 GHz and $f_{max}$ of 849.6 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.21-27
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• 2004

In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.18-24
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• 2002

n this paper, we have fabricated pseudomorphic high electron mobility transistors (PHEMT) with a 0.2 ${\mu}{\textrm}{m}$ wide-head T-shaped gate using electron beam lithography by a dose split method. To make the T-shape gate with gate length of 0.2 ${\mu}{\textrm}{m}$ and gate head size of 1.3 ${\mu}{\textrm}{m}$ we have used triple layer resist structure of PMMA/P(MMA-MAA)/PMMA. The DC characteristics of PHEMT, which has 0.2 ${\mu}{\textrm}{m}$ of gate length, 80 ${\mu}{\textrm}{m}$ of unit gate width and 4 gate fingers, are drain current density of 323 ㎃/mm and maximum transconductance 232 mS/mm at $V_{gs}$ = -1.2V and $V_{ds}$ = 3V. The RF characteristics of the same device are 2.91㏈ of S21 gain and 11.42㏈ of MAG at 40GHz. The current gain cut-off frequency is 63GHz and maximum oscillation frequency is 150GHz, respectively.ively.