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High-performance 94 GHz MMIC Low Noise Amplifier using Metamorphic HEMTs  

Kim, Sung-Chan (Dept. of EE, Hanbat National University)
An, Dan (Defense Agency for Technology and Quality)
Rhee, Jin-Koo (Millimeter-wave INnovation Technology research center, Dongguk University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.45, no.8, 2008 , pp. 48-53 More about this Journal
Abstract
In this paper, we developed the MMIC low noise amplifier using 100 nm metamorphic HEMTs technology in combination with coplanar circuit topology for 94 GHz applications. The $100nm\times60{\mu}m$ MHEMT devices for the MMIC LNA exhibited DC characteristics with a drain current density of 655 mA/mm, an extrinsic transconductance of 720 mS/mm. The current gain cutoff frequency $(f_T)$ and maximum oscillation frequency $(f_{max})$ were 195 GHz and 305 GHz, respectively. The realized MMIC LNA represented $S_{21}$ gain of 14.8 dB and noise figure of 4.6 dB at 94 GHz with an over-all chip size of $1.8mm\times1.48mm$.
Keywords
metamorphic HEMT; MMIC; low noise amplifier; 94 GHz; 100 nm;
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Times Cited By KSCI : 1  (Citation Analysis)
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