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Studies on the High-gain Low Noise Amplifier for 60 GHz Wireless Local Area Network  

조창식 (동국대학교 밀리미터파 신기술 연구센터)
안단 (동국대학교 밀리미터파 신기술 연구센터)
이성대 (동국대학교 밀리미터파 신기술 연구센터)
백태종 (동국대학교 밀리미터파 신기술 연구센터)
진진만 (동국대학교 밀리미터파 신기술 연구센터)
최석규 (동국대학교 밀리미터파 신기술 연구센터)
김삼동 (동국대학교 밀리미터파 신기술 연구센터)
이진구 (동국대학교 밀리미터파 신기술 연구센터)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.11, 2004 , pp. 21-27 More about this Journal
Abstract
In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.
Keywords
millimeter-wave monolithic integrated circuit(MIMIC); pseudomorphic high electron mobility transistor(PHEMT); V-band; low noise amplifier(LNA); wireless local area network(WLAN);
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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