Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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High-performance 94 GHz MMIC Low Noise Amplifier using Metamorphic HEMTs

Metamorphic HEMT를 이용한 우수한 성능의 94 GHz MMIC 저잡음 증폭기

  • Kim, Sung-Chan (Dept. of EE, Hanbat National University) ;
  • An, Dan (Defense Agency for Technology and Quality) ;
  • Rhee, Jin-Koo (Millimeter-wave INnovation Technology research center, Dongguk University)
  • 김성찬 (국립한밭대학교 전자공학과) ;
  • 안단 (국방기술품질원) ;
  • 이진구 (동국대학교 밀리미터파 신기술 연구센터)
  • Published : 2008.08.25
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Abstract

In this paper, we developed the MMIC low noise amplifier using 100 nm metamorphic HEMTs technology in combination with coplanar circuit topology for 94 GHz applications. The $100nm\times60{\mu}m$ MHEMT devices for the MMIC LNA exhibited DC characteristics with a drain current density of 655 mA/mm, an extrinsic transconductance of 720 mS/mm. The current gain cutoff frequency $(f_T)$ and maximum oscillation frequency $(f_{max})$ were 195 GHz and 305 GHz, respectively. The realized MMIC LNA represented $S_{21}$ gain of 14.8 dB and noise figure of 4.6 dB at 94 GHz with an over-all chip size of $1.8mm\times1.48mm$.

본 논문에서는 100 nm InGaAs/InAlAs/GaAs metamorphic HEMT (high electron mobility transistor)를 이용하여 94 GHz 대역 응용에 적용 가능한 MMIC (millimeter-wave monolithic integrated circuit) 저잡음 증폭기를 구현하였다. 94 GHz MMIC 저잡음 증폭기 구현을 위하여 제작된 $100nm\times60{\mu}m$ MHEMT의 측정결과, 655 mA/mm의 드레인 전류 밀도, 720 mS/mm의 최대전달컨덕턴스를 얻었으며, RF 특성으로 전류이득차단주파수는 195 GHz, 최대공진주파수는 305 GHz의 양호한 성능을 나타내었다. 구축된 MHEMT와 CPW 라이브러리를 이용하여 구현된 MMIC 저잡음 증폭기의 측정결과, 94 GHz에서 $S_{21}$ 이득은 14.8 dB, 잡음지수는 4.6 dB의 우수한 특성을 얻었다. 전체 칩의 크기는 $1.8mm\times1.48mm$이다.

Keywords

References

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