• Title/Summary/Keyword: Quantum-Dots

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Effect of Photo-darkening on the Response Time of PbSe Quantum-dots Doped Optical Fiber

  • Watekar, Pramod R.;Lin, Aoxiang;Ju, Seong-Min;Han, Won-Taek
    • Proceedings of the Optical Society of Korea Conference
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    • 2008.02a
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    • pp.251-252
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    • 2008
  • We fabricated silica glass optical fiber containing PbSe quantum-dots (QD) of average size 3.2 nm. The response time of the PbSe-QD doped optical fiber was measured to be around 200 ps. However, after exposure to 1064 nm laser emission for 15 minutes, the response time dramatically reduced to around 2.5 ps, which may be due to photo-darkening effect.

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Optical and Electrical Characteristics of Chirped Quantum Dot Structures for the Superluminescent Diodes with Wide Spectrum Bandwidth (파장대역폭이 넓은 고휘도 발광소자를 위한 Chirped 양자점 구조의 광/전기 특성 분석)

  • Han, Il-Ki
    • Journal of the Korean Vacuum Society
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    • v.18 no.5
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    • pp.365-371
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    • 2009
  • We analyzed photoluminescence (PL) and electroluminescence characteristics of various chirped quantum dot structures. Peaks in EL curves were contributed by excited states of quantum dots (QD), while those in PL curves by grounded states. Based on these characteristics, we suggested that superluminescent diodes with wide spectral bandwidth may be developed if chirped QD structures are designed to make a contribution by ground states to EL characteristics.

NMR analysis of organic ligands on quantum-dots

  • Kim, Jin Hae
    • Journal of the Korean Magnetic Resonance Society
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    • v.23 no.2
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    • pp.51-55
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    • 2019
  • Quantum dot (QD) is an emerging novel nanomaterial that has wide applicability and superior functionality with relatively low cost. Nuclear magnetic resonance (NMR) spectroscopy has been contributed to elucidate various features of QDs and to improve their overall performance. In particular, NMR spectroscopy becomes an essential analytical tool to monitor and analyze organic ligands on the QD surface. In the present mini-review, application of NMR spectroscopy as a superb methodology to appreciate organic ligands is discussed. In addition, it was recently noted that ligands exert rather greater influence on diverse features of QDs than our initial anticipation, for which contribution of NMR spectroscopy is briefly reviewed.

Analysis of In/Ga Inter-Diffusion Effect on the Thermodynamical Properties of InAs Quantum Dot

  • Abdellatif, M.H.;Song, Jin Dong;Lee, Donghan;Jang, Yudong
    • Applied Science and Convergence Technology
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    • v.25 no.6
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    • pp.158-161
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    • 2016
  • Debye temperature is an important thermodynamical factor in quantum dots (QDs); it can be used to determine the degree of homogeneity of a QD structure as well as to study the interdiffusion mechanism during growth. Direct estimation of the Debye temperature can be obtained using the Varshni relation. The Varshni relation is an empirical formula that can interpret the change of emission energy with temperature as a result of phonon interaction. On the other hand, phonons energy can be calculated using the Fan Expression. The Fan expression and Varshni relation are considered equivalent at a temperature higher than Debye temperature for InAs quantum dot. We investigated InAs quantum dot optically, the photoluminescence spectra and peak position dependency on temperature has been discussed. We applied a mathematical treatment using Fan expression, and the Varshni relation to obtain the Debye temperature and the phonon energy for InAs quantum dots sample. Debye temperature increase about double compared to bulk crystal. We concluded that the In/Ga interdiffusion during growth played a major role in altering the quantum dot thermodynamical parameters.

Optical Characteristic of InAs Quantum Dots in an InGaAs/GaAs Well Structure (광학적 방법으로 측정된 양자우물 안의 InAs 양자점의 에너지 준위)

  • Nam H.D.;Kwack H.S.;Doynnette L.;Song J.D.;Choi W.J.;Cho W.J.;Lee J.I.;Cho Y.H.;Julien F.H.;Choe J.W.;Yang H.S.
    • Journal of the Korean Vacuum Society
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    • v.15 no.2
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    • pp.209-215
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    • 2006
  • We investigated the optical property and the electronic subband structure of InAs quantum dots in an InAsGa/GaAs well structure utilizing photoluminescence (PL), PL excitation (PLE) and near infrared transmission spectroscopy. From transmission and PLE spectra, we found three bound states in the InAs quantum dot and two bound states in InGaAs/GaAs quantum well, and correlated to the results of intersubband transitions observed in photocurrent spectrum.

Preparation and Cellular Uptake of Hydrophobic Quantum Dots Encapsulated in Poly-L-Lactic Acid Film (소수성 양자점을 함유한 Poly-L-Lactic Acid film의 제조 및 세포흡수 연구)

  • Lee, Ji-Sook;Woo, Kyoung-Ja;Chung, He-Sson
    • Journal of Pharmaceutical Investigation
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    • v.39 no.1
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    • pp.1-6
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    • 2009
  • To overcome the stability problem of hydrophilic quantum dot (Q-dot), cellular uptake of hydrophobic instead of hydrophilic Q-dot was studied in the hope to find a simple method to use Q-dot as a cellular imaging probe. Hydrophobic Q-dot and poly-L-lactic acid (PLLA) were co-dissolved in chloroform to prepare stable films. Due to the cellular compatibility of PLLA, adherent cells were cultured on the film to observe the degree of Q-dot uptake and cytotoxicity of the prepared films. The results show that Q-dots were absorbed into NIH3T3 and EMT6 cells. Cellular uptake was also observed when hydrophobic Q-dots were coated directly on a glass plate. PLLA/Q-dot film and Q-dot coated on glass plate did not show major cytotoxicity. In vivo tumor model was also used to show the uptake of Q-dot from the PLLA/Q-dot film to the tumor site.

Synthesis and Exploitation in Solar Cells of Hydrothermally Grown ZnO Nanorods Covered by ZnS Quantum Dots

  • Mehrabian, Masood;Afarideh, Hossein;Mirabbaszadeh, Kavoos;Lianshan, Li;Zhiyong, Tang
    • Journal of the Optical Society of Korea
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    • v.18 no.4
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    • pp.307-316
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    • 2014
  • Improved power conversion efficiency of hybrid solar cells with ITO/ZnO seed layer/ZnO NRs/ZnS QDs/P3HT/PCBM/Ag structure was obtained by optimizing the growth period of ZnO nanorods (NRs). ZnO NRs were grown using a hydrothermal method on ZnO seed layers, while ZnS quantum dots (QDs) (average thickness about 24 nm) were fabricated on the ZnO NRs by the successive ionic layer adsorption and reaction (SILAR) technique. Morphology, crystalline structure and optical absorption of layers were analyzed by a scanning electron microscope (SEM), X-ray diffraction (XRD) and UV-Visible absorption spectra, respectively. The XRD results implied that ZnS QDs were in the cubic phase (sphalerite). Other experimental results showed that the maximum power conversion efficiency of 4.09% was obtained for a device based on ZnO NR10 under an illumination of one Sun (AM 1.5G, $100mW/cm^2$).