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http://dx.doi.org/10.5757/JKVS.2009.18.5.365

Optical and Electrical Characteristics of Chirped Quantum Dot Structures for the Superluminescent Diodes with Wide Spectrum Bandwidth  

Han, Il-Ki (Nano Device Research Center, Korea Institute of Science and Technology)
Publication Information
Journal of the Korean Vacuum Society / v.18, no.5, 2009 , pp. 365-371 More about this Journal
Abstract
We analyzed photoluminescence (PL) and electroluminescence characteristics of various chirped quantum dot structures. Peaks in EL curves were contributed by excited states of quantum dots (QD), while those in PL curves by grounded states. Based on these characteristics, we suggested that superluminescent diodes with wide spectral bandwidth may be developed if chirped QD structures are designed to make a contribution by ground states to EL characteristics.
Keywords
Superluminescent diodes; Chirped quantum dots; Photoluminescence; Electroluminesce;
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Times Cited By KSCI : 2  (Citation Analysis)
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