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Optical Characteristic of InAs Quantum Dots in an InGaAs/GaAs Well Structure  

Nam H.D. (Nano Device Research Center, Korea Institute of Science and Technology)
Kwack H.S. (Department of Physics, Chungbuk National University)
Doynnette L. (Institut d'Electronique Fondamentale, Universite Paris-Sud)
Song J.D. (Nano Device Research Center, Korea Institute of Science and Technology)
Choi W.J. (Nano Device Research Center, Korea Institute of Science and Technology)
Cho W.J. (Nano Device Research Center, Korea Institute of Science and Technology)
Lee J.I. (Nano Device Research Center, Korea Institute of Science and Technology)
Cho Y.H. (Department of Physics, Chungbuk National University)
Julien F.H. (Institut d'Electronique Fondamentale, Universite Paris-Sud)
Choe J.W. (Department of Physics, Kyung Hee University)
Yang H.S. (Department of Physics, Chung-Ang University)
Publication Information
Journal of the Korean Vacuum Society / v.15, no.2, 2006 , pp. 209-215 More about this Journal
Abstract
We investigated the optical property and the electronic subband structure of InAs quantum dots in an InAsGa/GaAs well structure utilizing photoluminescence (PL), PL excitation (PLE) and near infrared transmission spectroscopy. From transmission and PLE spectra, we found three bound states in the InAs quantum dot and two bound states in InGaAs/GaAs quantum well, and correlated to the results of intersubband transitions observed in photocurrent spectrum.
Keywords
Quantum dot; quantum dot infrared photodetector; Electronic subband; Dots in a well;
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  • Reference
1 S. Kim and M. Razeghi, in Handbook of Advanced Electronic and Photonic Materials and Devices, edited by H. Singh Nalwa, (Academic Press, San Diego, 2001), Vol. 2, Chap. 3
2 H. K. Park, E. K. Kim, C. H. Lee, J. D. Song, W. J. Choi, Y. J. Park, and J. I. Lee, J. Korean Phys. Soc. 45, 223 (2004)
3 T. Steiner, Semiconductor Nanostructures for Optoelectronic Applications (Artech House, Boston, 2004), and references therein
4 W-H. Chang, T. M. Hsu, C. C. Huang, S. L. Hsu, C. Y. Lai, N. T. Yeh, T. E. Nee, and J-I. Chyi, Phy. Rev. B 62, 6959 (2000)   DOI   ScienceOn
5 J. S. Kim, E. K. Kim, S. J. Lee, and S. K. Noh, J. Korean. Phys. Soc. 46, S163 (2005)
6 E. T. Kim, Z. H. Chen, M. Ho, and A. Madhukar, J. Vacuum. Sci. Technol. B 20, 1188 (2002)   DOI
7 F. Fossard, A. Helman, G. Fishman, F. H. Julien, J. Brault, M. Gendry, E. Peronne, A. Alexandrou, S. E. Schacham, G. Bahir, and E. Finkman, Phys. Rev. B 69, 155333 (2004)   DOI   ScienceOn
8 H. D. Nam, J. D. Song, W. J. Choi, J. I. Lee, and H. S. Yang, 2005 MRS Spring Meeting Proceeding 864, E9.40 (2005)
9 R. Heitz, F. Guffarth, K. Potschke, A. Schliwa, D. Bimberg, N. D. Zakharov, and P. Werner, Phys. Rev. B 71, 045325 (2005)   DOI   ScienceOn
10 H. Jiang and J. Singh, IEEE J. Quantum Electron. 34, 1188 (1998)   DOI   ScienceOn
11 D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, 1999), and references therein
12 A. P. Jacob, Q. X. Zhao, M. Willander, F. Ferdos, M. Sadeghi, and S. M. Wang, J. Appl. Phys. 92, 6794 (2002)   DOI   ScienceOn
13 P. N. Brounkov, A. Polimeni, S. T. Stoddart, M. Henini, L. Eaves, P. C. Main, A. R. Kovsh, Yu. G. Musikhin, and S. G. Konnikov, Appl. Phys. Lett. 73, 1092 (1998)   DOI   ScienceOn
14 R. J. Luyken, A. Lorke, A. O. Govorov, J. P. Kotthaus, G. Medeiros-Ribeiro, and P. M. Petroff, Appl. Phys. Lett. 74, 2486 (1999)   DOI   ScienceOn
15 O. Stier, M. Grundmann, and D. Bimberg, Phys. Rev. B 59, 5688 (1999)   DOI   ScienceOn
16 C. M. A. Kapteyn, F. Heinrichsdorff, O. Stier, R. Heitz, M. Grundmann, N. D. Zakharov, D.Bimberg, and P. Werner, Phys. Rev. B 60, 265 (1999)
17 H. D. Nam, J. D. Song, W. J. Choi, J. I. Lee, H. S. Yang, H. S. Kwack, and Y. H. Cho, J. Korean. Phys. Soc. 47, 1002 (2005)