• 제목/요약/키워드: Quantum well

검색결과 674건 처리시간 0.031초

정확한 위상정보를 얻기 위한 탈초점 영상들의 이미지 처리기법 (Image Processing of Defocus Series TEM Images for Extracting Reliable Phase Information)

  • 송경;신가영;김종규;오상호
    • Applied Microscopy
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    • 제41권3호
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    • pp.215-222
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    • 2011
  • We discuss the experimental procedure for extracting reliable phase information from a defocus series of transmission electron microscopy (TEM) dark-field images using the transport of intensity equation (TIE). Taking InGaN/GaN multi-quantum well light-emitting diode as a model system, various factors affecting the final result of reconstructed phase such as TEM sample preparation, TEM imaging condition, image alignment, the correction of defocus values and the use of high frequency pass filter are evaluated. The obtained phase of wave function was converted to the geometric phase of the corresponding lattice planes, which was then used for the two-dimensional mapping of lattice strain following the dark-field inline holography (DIH) routine. The strain map obtained by DIH after optimized image processing is compared with that obtained by the geometric phase analysis of high resolution TEM (HRTEM) image, manifesting that DIH yields more accurate and reliable strain information than HRTEM-based GPA.

Si-O 초격자 다이오드의 전기적 특성 (Electrical Characteristics of Si-O Superlattice Diode)

  • 박성우;서용진;정소영;박창준;김기욱;김상용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.175-177
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    • 2002
  • Electrical characteristics of the Si-O superlattice diode as a function of annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy (MBE) system. Consequently, the experimental results of superlattice diode with multilayer Si-O structure showed the stable and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic and quantum device as well as for the replacement of silicon-on-insulator (SOI) in ultra high speed and lower power CMOS devices in the future, and it can be readily integrated with silicon ULSI processing.

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Si-O 초격자 구조의 포토루미네슨스 특성 (Photoluminescence Characteristics of Si-O Superlattice Structure)

  • 정소영;서용진;박성우;이경진;김철복;김상용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.202-205
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    • 2002
  • The photoluminescence (PL) characteristics of the silicon-oxygen(Si-O) superlattice formed by molecular beam epitaxy (MBE) were studied. To confirm the presence of the nanocrystalline Si structure, Raman scattering measurement was performed. The blue shift was observed in the PL peak of the oxygen-annealed sample, compared to the hydrogen-annealed sample, which is due to a contribution of smaller crystallites. Our results determine the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high-speed and low-power silicon MOSFET devices in the future.

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광통신 모듈용 분포 귀환형 InGaAsP/InP 레이저 다이오드 제작 및 소자 특성평가 (Fabrication process and device characterization of distributed feedback InGaAsP/InP laser diodes for optical fiber communication module)

  • 전경남;김근주
    • 반도체디스플레이기술학회지
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    • 제10권4호
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    • pp.131-138
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    • 2011
  • We fabricated distributed feedback InGaAsP/InP laser diodes for optical fiber communication module and characterized the lasing properties in continuous wave operation. The active layer of 7-period InGaAsP(1.127 eV)/InGaAsP(0.954 eV) multi-quantum well structure was grown by the metal-organic chemical vapor deposition. The grating for waveguide was also fabricated by the implementation of the Mach-Zehender holographic method of two laser beams interference of He- Cd laser and the fabricated laser diode has the dimension of the laser length of $400{\mu}m$ and the ridge width of $1.2{\mu}m$. The laser diode shows the threshold current of 3.59 mA, the threshold voltage of 1.059 V. For the room-temperature operation with the current of 13.54 mA and the voltage of 1.12 V, the peak wavelength is about 1309.70 nm and optical power is 13.254 mW.

PREVENTION OF CIGARETTE SMOKE INDUCED LUNG CANCER BY LOW LET IONIZING RADIATION

  • Sanders, Charles L.
    • Nuclear Engineering and Technology
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    • 제40권7호
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    • pp.539-550
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    • 2008
  • Lung cancer is the most prevalent global cancer, ${\sim}90%$ of which is caused by cigarette smoking. The LNT hypothesis has been inappropriately applied to estimate lung cancer risk due to ionizing radiation. A threshold of ${\sim}1\;Gy$ for lung cancer has been observed in never smokers. Lung cancer risk among nuclear workers, radiologists and diagnostically exposed patients was typically reduced by ${\sim}40%$ following exposure to <100 mSv low LET radiation. The consistency and magnitude of reduced lung cancer in nuclear workers and occurrence of reduced lung cancer in exposed non-worker populations could not be explained by the HWE. Ecologic studies of indoor radon showed highly significant reductions in lung cancer risk. A similar reduction in lung cancer was seen in a recent well designed case-control study of indoor radon, indicating that exposure to radon at the EPA action level is associated with a decrease of ${\sim}60%$ in lung cancer. A cumulative whole-body dose of ${\sim}1\;Gy$ gamma rays is associated with a marked decrease in smoking-induced lung cancer in plutonium workers. Low dose, low LET radiation appears to increase apoptosis mediated removal of $\alpha$-particle and cigarette smoke transformed pulmonary cells before they can develop into lung cancer.

Numerical Study of Polarization-Dependent Emission Properties of Localized-Surface-Plasmon-Coupled Light Emitting Diodes with Ag/SiO2 Na

  • Moon, Seul-Ki;Yang, Jin-Kyu
    • Journal of the Optical Society of Korea
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    • 제18권5호
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    • pp.582-588
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    • 2014
  • We study polarization-dependent spontaneous emission (SE) rate and light extraction efficiency (LEE) in localized-surface-plasmon (LSP)-coupled light emitting diodes (LEDs). The closely packed seven $Ag/SiO_2$ core-shell (CS) nanoparticles (NPs) lie on top of the GaN surface for LSP coupling with a radiated dipole. According to the dipole direction, both the SE rate and the LEE are significantly modified by the LSP effect at the $Ag/SiO_2$ CS NPs when the size of Ag, the thickness of $SiO_2$, and the position of the dipole source are varied. The enhancement of the SE rate is related to an induced dipole effect at the Ag, and the high LEE is caused by light scattering with an LSP mode at $Ag/SiO_2$ CS NPs. We suggest the optimum position of the quantum well (QW) in blue InGaN/GaN LEDs with $Ag/SiO_2$ CS NPs for practical application.

CuInS2 나노 반도체 합성 및 표면 개질을 통한 광학적 효율 분석 연구 (Synthesis and Characterization of CuInS2 Semiconductor Nanoparticles and Evolution of Optical Properties via Surface Modification)

  • 양희승;김유진
    • 한국분말재료학회지
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    • 제19권3호
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    • pp.177-181
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    • 2012
  • Copper composite materials have attracted wide attention for energy applications. Especially $CuInS_2$ has a desirable direct band gap of 1.5 eV, which is well matched with the solar spectrum. $CuInS_2$ nanoparticles could make it possible to develop color-tunable $CuInS_2$ nanoparticle emitter in the near-infrared region (NIR) for energy application and bio imaging sensors. In this paper, $CuInS_2$ nanoparticles were successfully synthesized by thermo-decomposition methods. Surface modification of $CuInS_2$ nanoparticles were carried out with various semiconductor materials (CdS, ZnS) for enhanced optical properties. Surface modification and silica coating of hydrophobic nanoparticles could be dispersed in polar solvent for potential applications. Their optical properties were characterized by UV-vis spectroscopy and photoluminescence spectroscopy (PL). The structures of silica coated $CuInS_2$ were observed by transmission electron microscopy (TEM).

원형 수직 캐비티 표면 광방출 레이저의 모드특성 (Mode Behavior of Circular Vertical-Cavity Surface-Emitting Laser)

  • 호광춘
    • 한국인터넷방송통신학회논문지
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    • 제12권1호
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    • pp.51-56
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    • 2012
  • 새롭게 발전시킨 등가 전송선로 해석법을 이용하여 원형 수직 캐비티 표면 광방출 레이저(VCSELs)의 공진특성을 연구되었다. VCSEL을 설계하기 위하여 필요한 광학변수들인 주기적인 Bragg 거울에서 나타나는 차단대역 특성과 반사율을 분석하였다. 또한, 설계된 VCSEL의 양자효율과 문턱 전류밀도를 평가하기 위하여 원형 모드 전송 선로 해석법의 횡방향 공진조건을 이용하였다. 이 해석법은 원형 VCSEL의 광학적 특성들을 분석하기 위한 수치해석 시간을 현저하게 줄여 주며, 명확한 설계개념을 제공한다.

A Two-dimensional Supramolecular Network Built through Unique π-πStacking: Synthesis and Characterization of [Cu(phen)2(μ-ID A)Cu(phen)·(NO3)](NO3)·4(H2O)

  • Lin, Jian-Guo;Qiu, Ling Qiu;Xu, Yan-Yan
    • Bulletin of the Korean Chemical Society
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    • 제30권5호
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    • pp.1021-1025
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    • 2009
  • A novel supramolecular network containing binuclear copper unit $[Cu(phen)_{2}({\mu}-ID\;A)Cu(phen){\cdot}(NO_{3})](NO_{3}){\cdot}4(H_{2}O)$ (1) was synthesized through the self-assembly of iminodiacetic acid ($H_2IDA$) and 1,10-phenanthroline (phen) in the condition of pH = 6. It has been characterized by the infrared (IR) spectroscopy, elemental analysis, single crystal X-ray diffraction, and thermogravimetric analysis (TGA). 1 shows a 2-D supramolecular structure assembled through strong and unique $\pi-\pi$ packing interactions. Density functional theory (DFT) calculations show that theoretical optimized structures can well reproduce the experimental structure. The TGA and powder X-ray diffraction (PXRD) curves indicate that the complex 1 can maintain the structural integrity even at the loss of free water molecules. The magnetic property is also reported in this paper.

High Temperature Thermo-mechanical Properties of HfC Reinforced Tungsten Matrix Composites

  • Umer, Malik Adeel;Lee, Dong Ju;Ryu, Ho Jin;Hong, Soon Hyung
    • Composites Research
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    • 제28권6호
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    • pp.366-371
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    • 2015
  • In order to improve the mechanical properties of tungsten at room and elevated temperature, hafnium carbide (HfC) reinforced tungsten matrix composites were prepared using the spark plasma sintering technique. The effect of HfC content on the compressive strength and flexural strength of the tungsten composites was investigated. Mechanical properties of the composites were also measured at elevated temperatures and their trends, with varying reinforcement volume fraction, were studied. The effect of reinforcement fraction on the thermal properties of the composites was investigated. The thermal conductivity and diffusivity of the composites decreased with increasing temperature and reinforcement volume fraction. An inherently low thermal conductivity of the reinforcement as well as interfacial losses was responsible for lower values of thermal conductivity of the composites. Values of coefficient of thermal expansion of the composites were observed to increase with HfC volume fraction.