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Fabrication process and device characterization of distributed feedback InGaAsP/InP laser diodes for optical fiber communication module  

Jeon, Kyung-Nam (Division of New Business, KEC Corporation)
Kim, Keun-Joo (Department of Mechanical Engineering, Chonbuk National University)
Publication Information
Journal of the Semiconductor & Display Technology / v.10, no.4, 2011 , pp. 131-138 More about this Journal
Abstract
We fabricated distributed feedback InGaAsP/InP laser diodes for optical fiber communication module and characterized the lasing properties in continuous wave operation. The active layer of 7-period InGaAsP(1.127 eV)/InGaAsP(0.954 eV) multi-quantum well structure was grown by the metal-organic chemical vapor deposition. The grating for waveguide was also fabricated by the implementation of the Mach-Zehender holographic method of two laser beams interference of He- Cd laser and the fabricated laser diode has the dimension of the laser length of $400{\mu}m$ and the ridge width of $1.2{\mu}m$. The laser diode shows the threshold current of 3.59 mA, the threshold voltage of 1.059 V. For the room-temperature operation with the current of 13.54 mA and the voltage of 1.12 V, the peak wavelength is about 1309.70 nm and optical power is 13.254 mW.
Keywords
DFB Laser diode; InGaAsP/InP; MOCVD; Grating;
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