• Progress in Superconductivity
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• v.4 no.2
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• pp.127-131
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• 2003

We have designed and measured an SFQ(Single Flux Quantum) OR gate for a superconducting ALU (Arithmetic Logic Unit). To optimize the circuit, we used WRspice, XIC and Lmeter for simulations and layouts. The OR gate was consisted of a Confluence Buffer and a D Flip-Flop. When a pulse enters into the OR gate, the pulse does not propagate to the other input port because of the Confluence Buffer. A role of D Flip-Flip is expelling the data when the clock is entered into D Flip-Flop. For the measurement of the OR gate operation, we attached three DC/SFQs, three SFQ/DCs and one RS Flip -Flop to the OR gate. DC/SFQ circuits were used to generate the data pulses and clock pulses. Input frequency of 10kHz and 1MHzwere used to generate the SFQ pulses from DC/SFQ circuits. Output data from OR gate moved to RS flip -Flop to display the output on the oscilloscope. We obtained bias margins of the D Flip -Flop and the Confluence Buffer from the measurements. The measured bias margins $\pm$38.6% and $\pm$23.2% for D Flip-Flop and Confluence Buffer, respectively The circuit was measured at the liquid helium temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.397-407
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• 2002

A new simulator which predicts the quantum effect in NMOSFET structure is developed. Using the self-consistent method by numerical method, this simulator accurately predicts the carrier distribution due to improved calculation precision of potential in the inversion layer. However, previous simulator uses analytical potential distribution or analytic function based fitting parameter Using the developed simulator, threshold voltage increment and gate capacitance reduction due to the quantum effect are analyzed in NMOS. Especially, as oxide thickness and channel doping dependence of quantum effect is analyzed, and the property analysis for the next generation device is carried out.

• Progress in Superconductivity and Cryogenics
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• v.22 no.4
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• pp.10-13
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• 2020

High-quality superconducting coplanar waveguide (SCPW) resonators are crucial for developing superconducting quantum information devices and sensors. We designed quarter-wavelength SCPW resonators and fabricated the SCPW resonators using Nb thin film. The resonant characteristics were measured at T = 4.2 K, revealing the intrinsic quality factor and the coupling quality factor to be Qi = 4,784 and Qc = 17, 980, respectively. Our design and fabrication techniques would be very useful to develop a gate-tunable superconducting qubit based on the semiconductor nanostructures.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.8
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• pp.1044-1051
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• 2020

The age of quantum computers is coming soon. In order to prepare for the upcoming future, the National Institute of Standards and Technology has recruited candidates to set standards for post quantum cryptography to establish a future cryptography standard. The submitted ciphers are expected to be safe from quantum algorithm attacks, but it is necessary to verify that the submitted algorithm is safe from quantum attacks using quantum algorithm even when it is actually operated on a quantum computer. Therefore, in this paper, we investigate an efficient quantum gate implementation for binary field multiplication of code based post quantum cryptography to work on quantum computers. We implemented the binary field multiplication for two field polynomials presented by Classic McEliece and three field polynomials presented by ROLLO in generic algorithm and Karatsuba algorithm.

• Electronics and Telecommunications Trends
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• v.39 no.5
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• pp.61-73
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• 2024

Quantum information technology is driving innovative computing, communication, and sensing advancements. High-performance tunable lasers have become essential tools for precisely controlling and manipulating qubits. These lasers provide high stability and accuracy at specific wavelengths, enabling efficient control of various types of qubit systems, such as ions, neutral atoms, and defects. High-performance tunable lasers allow the initialization of qubit states, execution of quantum gate operations, and minimization of errors during the readout process. In addition, tunable lasers are critical in precisely regulating the interactions between multiple qubits to optimize quantum entanglement and correlation. This study explores the existing and state-of-the-art technologies related to the design and implementation of high-performance tunable lasers in the visible and near-infrared wavelength ranges that are crucial for key material systems used in quantum technology. Based on this investigation, we present new methodologies for maximizing the scalability of qubit control. These laser technologies are expected to contribute to the commercialization and performance enhancement of quantum information technology, a common foundational technology.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.457-458
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• 2014

In this paper, quantum mechanical simulations of the double-gate ultra-thin body (DG-UTB) MOSFETs are performed according to the International Technology Roadmap of Semiconductors (ITRS) specifications planned for 2020, to devise the way for on-current ($I_{on}$) improvement. We have employed non-equilibrium Green's function (NEGF) approach and solved the self-consistent equations based on the parabolic effective mass theory [1]. Our study shows that the [100]/<001> Ge and GaSb channel devices have higher $I_{on}$ than Si channel devices under the body thickness ($T_{bd}$) <5nm condition.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.1-7
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• 2004

We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

• Polymer(Korea)
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• v.30 no.3
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• pp.253-258
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• 2006

We have fabricated vortical type organic thin film transistors (OTFTs) consisting of ITO/n type active material/Al gate/n type active material/Al using F16CuPc, NTCDA, PTCDA and PTCDI C-8. The effect of mobility of n type active materials and thin film thickness on current-voltage (I-V) characteristics and on/off ratios were investigated. The vortical type organic transistor using PTCDI C-8 exhibited low operation voltage and high on-off ratio. In addition, we have investigated the feasibility of application in organic light emitting transistor using light emitting polymer. Especially, the light emitting transistor consisting of ITO/PEDOT-PSS/P3HT/F16CuPc/Al gate/F16CuPc/Al showed the maximum quantum efficiency of 0.054.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.228-239
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• 2004

In this paper, an analytical model accounting for the quantum effects in MOSFETs has been developed to study the behaviour of $high-{\kappa}$ dielectrics and to calculate the threshold voltage of the device considering two dielectrics gate stack. The effect of variation in gate stack thickness and permittivity on surface potential, inversion layer charge density, threshold voltage, and $I_D-V_D$ characteristics have also been studied. This work aims at presenting a relation between the physical gate dielectric thickness, dielectric constant and substrate doping concentration to achieve targeted threshold voltage, together with minimizing the effect of gate tunneling current. The results so obtained are compared with the available simulated data and the other models available in the literature and show good agreement.