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Analysis of Invesion Layer Quantization Effects in NMOSFETs  

Park, Ji-Seon (Dept.of Information communication, Ewah Wonan's University)
Sin, Hyeong-Sun (Dept.of Information communication, Ewah Wonan's University)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.51, no.9, 2002 , pp. 397-407 More about this Journal
Abstract
A new simulator which predicts the quantum effect in NMOSFET structure is developed. Using the self-consistent method by numerical method, this simulator accurately predicts the carrier distribution due to improved calculation precision of potential in the inversion layer. However, previous simulator uses analytical potential distribution or analytic function based fitting parameter Using the developed simulator, threshold voltage increment and gate capacitance reduction due to the quantum effect are analyzed in NMOS. Especially, as oxide thickness and channel doping dependence of quantum effect is analyzed, and the property analysis for the next generation device is carried out.
Keywords
Quantum effect; Self-consistent method; Threshold voltage shift; Capacitance reduction; Effective oxide thickness;
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