• Advances in nano research
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• 제17권2호
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• pp.137-147
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• 2024

Graphene nanoribbons (GNRs) are considered a promising alternative to graphene for future nanoelectronic applications. However, GNRs-based device modeling is still at an early stage. This research models the electronic properties of n-doped rough-edged 13-armchair graphene nanoribbons (13-AGNRs) and quantum transport properties of n-doped rough-edged 13-armchair graphene nanoribbon field-effect transistors (13-AGNRFETs) at different doping concentrations. Step-up and edge doping are used to incorporate doping within the nanostructure. The numerical real-space nearest-neighbour tight-binding (NNTB) method constructs the Hamiltonian operator matrix, which computes electronic properties, including the sub-band structure and bandgap. Quantum transport properties are subsequently computed using the self-consistent solution of the two-dimensional Poisson and Schrödinger equations within the non-equilibrium Green's function method. The finite difference method solves the Poisson equation, while the successive over-relaxation method speeds up the convergence process. Performance metrics of the device are then computed. The results show that highly doped, rough-edged 13-AGNRs exhibit a lower bandgap. Moreover, n-doped rough-edged 13-AGNRFETs with a channel of higher doping concentration have better gate control and are less affected by leakage current because they demonstrate a higher current ratio and lower off-current. Furthermore, highly n-doped rough-edged 13-AGNRFETs have better channel control and are less affected by the short channel effect due to the lower value of subthreshold swing and drain-induced barrier lowering. The inclusion of dopants enhances the on-current by introducing more charge carriers in the highly n-doped, rough-edged channel. This research highlights the importance of optimizing doping concentrations for enhancing GNRFET-based device performance, making them viable for applications in nanoelectronics.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권3호
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• pp.159-167
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• 2005

Quantization effects (QEs), which manifests when the device dimensions are comparable to the de Brogile wavelength, are becoming common physical phenomena in the present micro-/nanometer technology era. While most novel devices take advantage of QEs to achieve fast switching speed, miniature size and extremely small power consumption, the mainstream CMOS devices (with the exception of EEPROMs) are generally suffering in performance from these effects. In this paper, an analytical model accounting for the QEs and poly-depletion effects (PDEs) at the silicon (Si)/dielectric interface describing the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of MOS devices with thin oxides is developed. It is also applicable to multi-layer gate-stack structures, since a general procedure is used for calculating the quantum inversion charge density. Using this inversion charge density, device characteristics are obtained. Also solutions for C-V can be quickly obtained without computational burden of solving over a physical grid. We conclude with comparison of the results obtained with our model and those obtained by self-consistent solution of the $Schr{\ddot{o}}dinger$ and Poisson equations and simulations reported previously in the literature. A good agreement was observed between them.

• 대한전자공학회논문지
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• 제27권11호
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• pp.1-8
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• 1990

4개의 Quantum well을 갖는 GRINSCH InGaAs/Inp Buried Heterostructure의 laser diode 12개로 구성되어 있는 12-laser diode array를 제작하여, 각 laser diode의 전자 흡수 영역의 인가 전압에 의하여 lasing 작용을 조절할 수 있는 가능성을 조사하였다. 12개의 V가 홈을 갖는 Si V-groove와 12개의 광섬유를 이용하여 12-laser diode array의 빛출력을 coupling하여 전자 흡수영역의 인가 전압의 변화에 따른 각 laser diode의 여러특성을 조사하였다. 마지막으로 12-laser diode array와 Si V-Groove와 광섬유를 이용하여 디지털 논리 gate들로 구성되어 있는 전자 회로 board들 간의 광대역 근거리 통신 및 B-ISDN을 위한 central office와 가입자 간의 통신을 구현하는 방법에 대하여 생각해 보았다.

• 전기전자학회논문지
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• 제23권3호
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• pp.811-816
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• 2019

초고진공 화학기상증착장치(UHV-CVD)에 의해 성장된 실리콘-흡착된 산소(Si-O) 초격자가 실리콘 양자전자소자를 위한 에피택셜 장벽으로 소개되었다. 전류-전압 측정 결과 높은 브레이크다운 전압을 갖는 매우 안정하고 양호한 절연특성을 나타내었다. 에피택셜 성장된 Si-O 초격자는 SOI(silicon on insulator)를 대체할 수 있는 절연층으로도 사용될 수 있음을 보여준다. 이 두꺼운 장벽은 전계효과트랜지스터(FET)의 절연 게이트로 유용하게 사용될 수 있어 FET 위에 또 다른 FET를 제작할 수 있으므로 미래 실리콘계 3차원 집적회로의 궁극적인 목표에 한층 더 다가갈 수 있는 가능성을 보여주는 것이다.

• 센서학회지
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• 제30권6호
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• pp.441-445
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• 2021

The components affecting the extrinsic transconductance (g_{m_ext}) in In_0.7Ga_0.3As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate were investigated. First, comprehensive modeling, which only requires physical parameters, was used to explain both the intrinsic transconductance (g_{m_int}) and the g_{m_ext} of the devices. Two types of In_0.7Ga_0.3As QW HEMT were fabricated with gate lengths ranging from 10 ㎛ to sub-100 nm. These measured results were correlated with the modeling to describe the device behavior using analytical expressions. To study the effects of the components affecting g_{m_int}, the proposed approach was extended to projection by changing the values of physical parameters, such as series resistances (R_S and R_D), apparent mobility (𝜇_{n_app}), and saturation velocity (𝜈_sat).

• 한국정보통신학회논문지
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• 제10권3호
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• pp.479-485
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• 2006

이중게이트 MOSFET는 스케일링 이론을 확장하고 단채널효과를 제어 할 수 있는 소자로서 각광을 받고 있다. 단 채널효과를 제어하기 위하여 저도핑 초박막 채널폭을 가진 이중게이트 MOSFET의 경우, 20nm이하까지 스케일링이 가능한 것으로 알려지고 있다. 이 논문에서 는 20m이하까지 스켈링된 이중게이트 MOSFET소자에 대한 분석학석 전송모델을 제시하고자 한다. 이 모델을 이용하여 서브문턱스윙(Subthreshold swing), 문턱전압변화(Threshold voltage rolloff) 드레인유기장벽저하(Drain induced barrier lowering)와 같은 단채널효과를 분석하고자 한다. 제안된 모델은 열방출 및 터널링에 의한 전송효과를 포함하고 있으며 이차원 포아슨방정식의 근사해를 이용하여 포텐셜 분포를 구하였다. 또한 터널링 효과는 Wentzel-Kramers-Brillouin 근사를 이 용하였다. 이 모델을 사용하여 초박막 게이트산화막 및 채널폭을 가진 5-20nm 채널길이의 이중게이트 MOSFET에 대한 서브문턱영역의 전송특성을 해석하였다. 또한 이 모델의 결과값을 이차원 수치해석학적 모델값과 비교하였으며 게이트길이, 채널두께 및 게이트산화막 두께에 대한 관계를 구하기 위하여 사용하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.189-198
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• 2006

A new analytical model has been proposed for predicting the sheet carrier density of Metal insulator Semiconductor High Electron Mobility Transistor (MISHEMT). The model takes into account the non-linear relationship between sheet carrier density and quasi Fermi energy level to consider the quantum effects and to validate it from subthreshold region to high conduction region. Then model has been formulated in such a way that it is applicable to MESFET/HEMT/MISFET with few adjustable parameters. The model can also be used to evaluate the characteristics for different gate insulator geometries like T-gate etc. The model has been extended to forecast the drain current, conductance and high frequency performance. The results so obtained from the analysis show excellent agreement with previous models and simulated results that proves the validity of our model.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• ETRI Journal
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• 제15권2호
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• pp.11-25
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• 1993

Interface trap densities at gate oxide/silicon substrate ($SiO_2/Si$) interfaces of metal oxide semiconductor field-effect transistors (MOSFETs) were determined from the substrate bias dependence of the subthreshold slope measurement. This method enables the characterization of interface traps residing in the energy level between the midgap and that corresponding to the strong inversion of small size MOSFET. In consequence of the high accuracy of this method, the energy dependence of the interface trap density can be accurately determined. The application of this technique to a MOSFET showed good agreement with the result obtained through the high-frequency/quasi-static capacitance-voltage (C-V) technique for a MOS capacitor. Furthermore, the effective substrate dopant concentration obtained through this technique also showed good agreement with the result obtained through the body effect measurement.

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.270-274
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• 2016

This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green’s function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.