• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.2
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• pp.27-38
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• 2002

A new self-consistent mathematical model for semiconductor quantum well device was developed. The model was based on the direct solution of the Boltzmann transport equation, coupled to the Schrodinger and Poisson equations. The solution yielded the distribution function for a two-dimensional electron gas(2DEG) in quantum well devices. To solve the Boltzmann equation, it was transformed into a tractable form using a Legendre polynomial expansion. The Legendre expansion facilitated analytical evaluation of the collision integral, and allowed for a reduction of the dimensionality of the problem. The transformed Boltzmann equation was then discretized and solved using sparce matrix algebra. The overall system was solved by iteration between Poisson, Schrodinger and Boltzmann equations until convergence was attained.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.2
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• pp.14-26
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• 2002

A new model for degenerate semiconductor quantum well devices was developed. In this model, the multi-subband Boltzmann transport equation was formulated by applying the Pauli exclusion principle and coupled to the Schrodinger and Poisson equations. For the solution of the resulted nonlinear system, the finite difference method and the Newton-Raphson method was used and carrier energy distribution function was obtained for each subband. The model was applied to a Si MOSFET inversion layer. The results of the simulation showed the changes of the distribution function from Boltzmann like to Fermi-Dirac like depending on the electron density in the quantum well, which presents the appropriateness of this modeling, the effectiveness of the solution method, and the importance of the Pauli -exclusion principle according to the reduced size of semiconductor devices.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.719-724
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• 2003

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model (QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll off characteristics for threshold voltage of MOSFET with decreasing channel length, we know $\alpha$ value must be nearly 1 in the generalized scaling.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.233-236
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• 2012

In this paper, the output characteristics of GaN-based LED considering blocking layer design variables are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering Al mole fraction of EBL, thickness of EBL, Al mole fraction of HBL and doping concentration of HBL are analyzed using ISE-TCAD.

• Journal of IKEEE
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• v.27 no.1
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• pp.12-18
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• 2023

The current circuit technology that individually connects each qubit to a control circuit at room temperature has limitations in achieving scalability and reliability of a quantum computer. With the advent of cryogenic CMOS interconnect electronics, it is expected to dramatically improve the interconnect complexity, system reliability and size, and price. In this paper, we introduce the CMOS integrated sensing and control technology platform overcoming the problems caused by the fragile and sensitive characteristics of qubit.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.1-8
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• 1990

We made a 12-Laser Diode Array consisting of 12 Graded Index Separate Confinement (GRINSCH) InGaAs/Inp Buried Heterostructure 4 Quantum Well Laser Diodes and examined the potential of controlling lasing operation of each laser diode by the voltage to its electroabsorption region. Using Si V-Groove with 12 V-grooves, a 12-Laser Diode Array, and 12 optical fibers, we investigated the various characteristics of each laser diode by changing the voltage to its electro-absorption region. Finally, we thought over the promising way of implementing optical local area communication between electric circuit boards or between subscribers and a central office using a 12-Laser Diode Array, Si V-groove, and optical fibers.

• International Journal of Internet, Broadcasting and Communication
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• v.14 no.3
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• pp.1-7
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• 2022

This paper aims to compare the mean object size of M/G/1/PS model with that of M/BP/1 model used in the web service. The mean object size is one of important measure to control and manage web service economically. M/G/1/PS model utilizes the processor sharing in which CPU rotates in round-robin order giving time quantum to multiple tasks. M/BP/1 model uses the Bounded Pareto distribution to describe the web service according to file size. We may infer that the mean waiting latencies of M/G/1/PS and M/BP/1 model are equal to the mean waiting latency of the deterministic model using the round robin scheduling with the time quantum. Based on the inference, we can find the mean object size of M/G/1/PS model and M/BP/1 model, respectively. Numerical experiments show that when the system load is smaller than the medium, the mean object sizes of the M/G/1/PS model and the M/BP/1 model become the same. In particular, when the shaping parameter is 1.5 and the lower and upper bound of the file size is small in the M/BP/1 model, the mean object sizes of M/G/1/PS model and M/BP/1 model are the same. These results confirm that it is beneficial to use a small file size in a web service.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.17 no.1
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• pp.74-96
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• 2023

At present, the smart grid has become one of the indispensable infrastructures in people's lives. As a commonly used communication method, wireless communication is gradually, being widely used in smart grid systems due to its convenient deployment and wide range of serious challenges to security. For the insecurity of the schemes based on large integer factorization and discrete logarithm problem in the quantum environment, an identity-based key management scheme for smart grid over lattice is proposed. To assure the communication security, through constructing intra-cluster and inter-cluster multi-hop routing secure mechanism. The time parameter and identity information are introduced in the relying phase. Through using the symmetric cryptography algorithm to encrypt improve communication efficiency. Through output the authentication information with probability, the protocol makes the private key of the certification body no relation with the distribution of authentication information. Theoretic studies and figures show that the efficiency of keys can be authenticated, so the number of attacks, including masquerade, reply and message manipulation attacks can be resisted. The new scheme can not only increase the security, but also decrease the communication energy consumption.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1343-1346
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• 2005

Self assembled monolayers (SAM) are generally used at the anode/organic interface to enhance the carrier injection in organic light emitting devices, which improves the electroluminescence performance of organic devices. This paper reports the use of SAM of 1-decanethiol (H-S(CH2)9CH3) at the cathode/organic interface to enhance the electron injection process for organic light emitting devices. Aluminum (Al), tris-(8-hydroxyquionoline) aluminum (Alq3), N,N'-diphenyl-N,N'-bis(3 -methylphenyl)-1,1'- diphenyl-4,4'-diamine (TPD) and indium-tin-oxide (ITO) were used as bottom cathode, an emitting layer (EML), a hole-transporting layer (HTL) and a top anode, respectively. The results of the capacitancevoltage (C-V), current density -voltage (J-V) and brightness-voltage (B-V), luminance and quantum efficiency measurements show a considerable improvement of the device performance. The dipole moment associated with the SAM layer decreases the electron schottky barrier between the Al and the organic interface, which enhances the electron injection into the organic layer from Al cathode and a considerable improvement of the device performance is observed. The turn-on voltage of the fabricated device with SAM layer was reduced by 6V, the brightness of the device was increased by 5 times and the external quantum efficiency is increased by 0.051%.

• ETRI Journal
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• v.44 no.3
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• pp.504-511
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• 2022

Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change leads to a reduced barrier height due to quantum coupling among the three-dimensional motions of channel electrons. Thus, an analysis and physical model of the gate leakage current that includes drift velocity is proposed. Numerical calculations show that the negative and positive temperature dependence of gate leakage currents decreases across the barrier as the field increases. They also demonstrate that source-drain voltage can have an effect of 1 to 2 orders of magnitude on the gate leakage current. The proposed model agrees well with the experimental results.