• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1343-1346
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• 2005

Self assembled monolayers (SAM) are generally used at the anode/organic interface to enhance the carrier injection in organic light emitting devices, which improves the electroluminescence performance of organic devices. This paper reports the use of SAM of 1-decanethiol (H-S(CH2)9CH3) at the cathode/organic interface to enhance the electron injection process for organic light emitting devices. Aluminum (Al), tris-(8-hydroxyquionoline) aluminum (Alq3), N,N'-diphenyl-N,N'-bis(3 -methylphenyl)-1,1'- diphenyl-4,4'-diamine (TPD) and indium-tin-oxide (ITO) were used as bottom cathode, an emitting layer (EML), a hole-transporting layer (HTL) and a top anode, respectively. The results of the capacitancevoltage (C-V), current density -voltage (J-V) and brightness-voltage (B-V), luminance and quantum efficiency measurements show a considerable improvement of the device performance. The dipole moment associated with the SAM layer decreases the electron schottky barrier between the Al and the organic interface, which enhances the electron injection into the organic layer from Al cathode and a considerable improvement of the device performance is observed. The turn-on voltage of the fabricated device with SAM layer was reduced by 6V, the brightness of the device was increased by 5 times and the external quantum efficiency is increased by 0.051%.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.189-189
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• 2003

• KIPS Transactions on Computer and Communication Systems
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• v.11 no.12
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• pp.453-460
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• 2022

As high-performance quantum computers are expected to be developed, studies are being actively conducted to build a post-quantum security system that is safe from potential quantum computer attacks. When the Grover's algorithm, a representative quantum algorithm, is used to search for a secret key in a symmetric key cryptography, there may be a safety problem in that the security strength of the cipher is reduced to the square root. NIST presents the post-quantum security strength estimated based on the cost of the Grover's algorithm required for an attack of the cryptographic algorithm as a post-quantum security requirement for symmetric key cryptography. The estimated cost of Grover's algorithm for the attack of symmetric key cryptography is determined by the quantum circuit complexity of the corresponding encryption algorithm. In this paper, the quantum circuit of the SCHWAEMM algorithm, AEAD family of SPARKLE, which was a finalist in NIST's lightweight cryptography competition, is efficiently implemented, and the quantum cost to apply the Grover's algorithm is analyzed. At this time, the cost according to the CDKM ripple-carry adder and the unbounded Fan-Out adder is compared together. Finally, we evaluate the post-quantum security strength of the lightweight cryptography SPARKLE SCHWAEMM algorithm based on the analyzed cost and NIST's post-quantum security requirements. A quantum programming tool, ProjectQ, is used to implement the quantum circuit and analyze its cost.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.192-196
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• 2007

ZnSe/CdSe/ZnSe single quantum wells with different well thickness were grown by hot wall epitaxy. The quantum well thicknesses were measured by TEM. The critical thickness of single quantum well layer was found to be about $9{\AA}$ from the intensities and the full-width at half maximum of photoluminescence(PL) spectra. When the thickness of quantum wells was less than the critical thickness, the Stoke's shift was confirmed from the comparison between PL and photoluminescence excitation spectra, and it may be due to the exciton binding energy. The PL peak energy dependence on the quantum well thickness was coincident with the theoretical values.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.2
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• pp.14-26
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• 2002

A new model for degenerate semiconductor quantum well devices was developed. In this model, the multi-subband Boltzmann transport equation was formulated by applying the Pauli exclusion principle and coupled to the Schrodinger and Poisson equations. For the solution of the resulted nonlinear system, the finite difference method and the Newton-Raphson method was used and carrier energy distribution function was obtained for each subband. The model was applied to a Si MOSFET inversion layer. The results of the simulation showed the changes of the distribution function from Boltzmann like to Fermi-Dirac like depending on the electron density in the quantum well, which presents the appropriateness of this modeling, the effectiveness of the solution method, and the importance of the Pauli -exclusion principle according to the reduced size of semiconductor devices.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.719-724
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• 2003

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model (QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll off characteristics for threshold voltage of MOSFET with decreasing channel length, we know $\alpha$ value must be nearly 1 in the generalized scaling.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.2
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• pp.27-38
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• 2002

A new self-consistent mathematical model for semiconductor quantum well device was developed. The model was based on the direct solution of the Boltzmann transport equation, coupled to the Schrodinger and Poisson equations. The solution yielded the distribution function for a two-dimensional electron gas(2DEG) in quantum well devices. To solve the Boltzmann equation, it was transformed into a tractable form using a Legendre polynomial expansion. The Legendre expansion facilitated analytical evaluation of the collision integral, and allowed for a reduction of the dimensionality of the problem. The transformed Boltzmann equation was then discretized and solved using sparce matrix algebra. The overall system was solved by iteration between Poisson, Schrodinger and Boltzmann equations until convergence was attained.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.6
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• pp.1027-1034
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• 2017

In this paper, we propose a new function embedding method that can measure mathematical projections of probability amplitude, probability, average expectation and matrix elements of stationary-state unit matrix at all control operation points of quantum gates. The function embedding method in this paper is to embed orthogonal normalization condition of probability amplitude for each control operating point into a binary scalar operator by using Dirac symbol and Kronecker delta symbol. Such a function embedding method is a very effective means of controlling the arithmetic power function of a unitary gate in a unitary transformation which expresses a quantum gate function as a tensor product of a single quantum. We present the results of evolutionary operation and projective measurement when we apply the proposed function embedding method to the ternary 2-qutrit cNOT gate and compare it with the existing methods.

• Current Photovoltaic Research
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• v.2 no.2
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• pp.41-47
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• 2014

Extensive investigation on silicon based thin film reveals a wide range of film characteristics, from low optical gap to high optical gap, from amorphous to micro-crystalline silicon etc. Fabrication of single junction, tandem and triple junction solar cell with suitable materials, indicate that fabrication of solar cell of a relatively moderate efficiency is possible with a better light induced stability. Due to these investigations, various competing materials like wide band gap silicon carbide and silicon oxide, low band gap micro-crystalline silicon and silicon germanium etc were also prepared and applied to the solar cells. Such a multi-junction solar cell can be a technologically promising photo-voltaic device, as the external quantum efficiency of such a cell covers a wider spectral range.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.1
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• pp.29-36
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• 2016

Recently a new class of quantum gate called $NCV-{\mid}v_1$ > library with low cost realizable potentialities is being watched with keen interest. The $NCV-{\mid}v_1$ > MCT gate is composed of AND cascaded-$CV-{\mid}v_1$ > gates to control the target qudit and its adjoint gates to erase junk ones. This paper presents a new symmetrical duality library named $NCV^{\dag}-{\mid}v_1$ > library corresponding to $NCV-{\mid}v_1$ > library. The new $NCV^{\dag}-{\mid}v_1$ > library can be operated on OR logic under certain conditions. By using both the $NCV-{\mid}v_1$ > and $NCV^{\dag}-{\mid}v_1$ > libraries it is possible to realize MPMCT gates, SOP and POS type synthesis of quantum logic circuits with extremely low cost, and expect dual gate property caused by different operational attributes with respect to forward and backward operations.