• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.3
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• pp.540-545
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• 2013

The Fractional Fourier transform, as a generalization of the classical Fourier Transform, was first introduced in quantum mechanics. Because of its simple and useful properties of Fractional Fourier transform in time-frequency plane, various research results in sonar and radar signal processing have been introduced and shown superior results to conventional method utilizing Fourier transform until now. In this paper, we applied Fractional Fourier transform to sonar signal processing to detect and separate the overlapping linear frequency modulated signals. Experimental results show that received overlapping LFM(Linear Frequency Modulation) signals can be detected and separated effectively in Fractional Fourier transform domain.

• Journal of information and communication convergence engineering
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• v.17 no.2
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• pp.161-165
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• 2019

In this study, zinc tin oxide (ZTO) thin-film transistors are researched to observe the correlation between the barrier potential and electrical properties. Although much research has been conducted on the electronic radiation from Schottky contacts in semiconductor devices, research on electronic radiation that occurs at voltages above the threshold voltage is lacking. Furthermore, the current phenomena occurring below the threshold voltage need to be studied. Bidirectional transistors exhibit current flows below the threshold voltage, and studying the characteristics of these currents can help understand the problems associated with leakage current. A factor that affects the stability of bidirectional transistors is the potential barrier to the Schottky contact. It has been confirmed that Schottky contacts increase the efficiency of the element in semiconductor devices, by cutting off the leakage current, and that the recombination at the PN junction is closely related to the Schottky contacts. The bidirectional characteristics of the transistors are controlled by the space-charge limiting currents generated by the barrier potentials of the SiOC insulated film. Space-charge limiting currents caused by the tunneling phenomenon or quantum effect are new conduction mechanisms in semiconductors, and are different from the leakage current.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.6
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• pp.863-872
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• 2002

Real-time(RT) object-oriented(00) distributed computing is a form of RT distributed computing realized with a distributed computer system structured in the form of an object network. Several approached proposed in recent years for extending the conventional object structuring scheme to suit RT applications, are briefly reviewed. Then the approach named the TMO(Time-triggered Message-triggered Object) structuring scheme was formulated with the goal of instigating a quantum productivity jump in the design of distributed time triggered simulation. The TMO scheme is intended to facilitate the pursuit of a new paradigm in designing distributed time triggered simulation which is to realize real-time computing with a common and general design style that does not alienate the main-stream computing industry and yet to allow system engineers to confidently produce certifiable distributed time triggered simulation for safety-critical applications. The TMO structuring scheme is a syntactically simple but semantically powerful extension of the conventional object structuring approached and as such, its support tools can be based on various well-established 00 programming languages such as C++ and on ubiquitous commercial RT operating system kernels. The Scheme enables a great reduction of the designers efforts in guaranteeing timely service capabilities of application systems.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.3
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• pp.449-455
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• 1993

In order to investigate the improvements of relatively poor characteristics of short wave length AlGaAs/GaAs laser diodes which are useful as a light source for short distance communication systems, the low temperature $(<680^{\circ}C)$ grown AlGaAs/GaAs GRINSCH-QW laser diodes by molecular beam epitaxy have been studied by photoluminescence as a function of rapid thermal annealing (RTA) temperature. It is shown that guantum well photoluminescence intensity increased substantially by a factor of 10 after RAT at $950^{\circ}C$ for 10 sec. This is related to the reduction of non-radiative recombination in the guantum well region. The threshold current of annealed laser diode is reduced by a factor, of 4, confirming the improvement of laser diode quality by rapid thermal annealing.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.314-314
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• 2016

In this paper, the effects of carrier concentration on dielectric constant of ITO films were investigated by spectroscopic ellipsometry. From SE results, we find the pronounced shift of the ${\varepsilon}1$ peaks toward high energy with concentration; while contrarily, the ${\varepsilon}2$ values at low energy region increases with decreasing concentration. These shifts are attributed to the Burstein-Moss and free-carrier absorption effects within ITO films. With increases carrier concentration, the values of extinction coefficients show quite different behaviors in range of wavelength from 200 to 1200 nm. The reduction in k at ${\lambda}{\leq}500nm$, while increasing at ${\lambda}{\geq}500nm$ was observed. The QE of HJ solar cells behaviors can be roughly classified into two regions: short-wavelengths (${\leq}650nm$) and long-wavelengths region (${\geq}650nm$). With increasing carrier concentration as well as energy band gap, QE shows improvement at short-wavelength, while at long-wavelength QE shows opposite trend. Widening band gap energy due to Burstein-Moss shift is the key to improve QE in short-wavelength; simultaneously FCA effect due to optical scattering is attributed to the reduction in QE at long-wavelength. In spite of band gap extension, Jsc calculated from QE decreases from 34.7 mA/cm2 to 33.2 mA/cm2 with increasing carrier concentration. It demonstrated that FCA effect may more govern Jsc in the HJ solar cells.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.14-17
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• 2007

Magnetic properties of transition metal doped $La_{0.5}Ca_{0.5}(Mn_{0.98}TM_{0.02})O_3$(TM=Cr and Ti) are studied. The samples are synthesized by the conventional solid-state method. Using vibrating sample magnetometer magnetization-temperature measurement were carried out with zero field cooling and field cooling at 50 Oe. Cr-doped sample shows cluster or spin glass like behavior while Ti doped does not. Curie temperature obtained were decreased from that of LCMO(245.5 K). Curie temperatures of Cr-doped and Ti-doped samples are 235.5 K and 232.7 K, respectively. The temperature-dependent coercivity $H_c(T)$ was also measured. The coercive force continuously decreases with the substitution of Cr and Ti, The result can be understood in terms of the interaction between defect and domain wall.

• Journal of Radiation Protection and Research
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• v.46 no.2
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• pp.80-82
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• 2021

Dr. Haruyuki Ogino, a member of the Japan Health Physics Society (JHPS), was awarded the 2021 Bo Lindell Medal by the International Commission on Radiological Protection (ICRP). To commemorate this, the "Joint JHPS-KARP-ARPS program for young radiation protection (RP) scientists to discuss the future of RP" was organized via a web meeting system. First, Dr. Ogino gave a lecture, and then young researchers selected from each academic society made presentations on the future of RP. After the presentations by the three researchers, a free talk was held-young researcher groups of each country being active is a great opportunity to collaborate and exchange information. It was emphasized that the low awareness of knowledge related to radiation has been common to all of the participating countries. Thus, it is necessary to utilize communication via web technology, as done for this program, effectively. One of the biggest advantages for Asia and Oceania is that we do not have a significant time difference. The round-table discussion was concluded by expressing the hope of active exchange and development of young researchers in the future.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.4
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• pp.659-664
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• 2020

In this paper, we propose a silicon-based electro-optic (EO) modulator which can modulate a sign of a topological charge number l of |l|=1 orbital angular momentum (OAM) mode. The proposed EO modulator consists of position-dependent doped Si waveguide core and undoped SiO2, cladding, which enables control of the effective index and propagation loss of two OAM constitutive eigenmodes. The modulator functions as OAM mode maintaining waveguide at -0.33V and as topological charge sign inverter at 10V. The output OAM mode purity is calculated through electric field distribution, showing high purity of |l|>0.92 in both cases.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.1
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• pp.101-108
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• 2017

As the quantum gate matrix is a $r^{n+1}{\times}r^{n+1}$ dimension when the radix is r, the number of control state vectors is n, and the number of target state vectors is one, the matrix dimension with increasing n is exponentially increasing. If the number of control state vectors is $2^n$, then the number of $2^n-1$ unit matrix operations preserves the output from the input, and only one can be performed the unitary operation to the target state vector. Therefore, this paper proposes a new method of function embedding that can replace $2^n-1$ times of unit matrix operations with deterministic contribution to matrix dimension by arithmetic power switch of the unitary gate. The proposed function embedding method uses a binary literal switch with a multivalued threshold, so that a general purpose hybrid MCU gate can be realized in a $r{\times}r$ unitary matrix.

• Proceedings of the KSRS Conference
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• 2008.10a
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• pp.220-223
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• 2008

A camera system for the satellite application performs the mission of observation by measuring radiated light energy from the target on the earth. As a development stage of the system, the signal level analysis by estimating the number of electron collected in a pixel of an applied CCD is a basic tool for the performance analysis like SNR as well as the data path design of focal plane electronic. In this paper, two methods are presented for the calculation of the number of electrons for signal level analysis. One method is a quantitative assessment based on the CCD characteristics and design parameters of optical module of the system itself in which optical module works for concentrating the light energy onto the focal plane where CCD is located to convert light energy into electrical signal. The other method compares the design\ parameters of the system such as quantum efficiency, focal length and the aperture size of the optics in comparison with existing camera system in orbit. By this way, relative count of electrons to the existing camera system is estimated. The number of electrons, as signal level of the camera system, calculated by described methods is used to design input circuits of AD converter for interfacing the image signal coming from the CCD module in the focal plane electronics. This number is also used for the analysis of the signal level of the CCD output which is critical parameter to design data path between CCD and A/D converter. The FPE(Focal Plane Electronics) designer should decide whether the dividing-circuit is necessary or not between them from the analysis. If it is necessary, the optimized dividing factor of the level should be implemented. This paper describes the analysis of the electron count of a camera system for a satellite application and then of the signal level for the interface design between CCD and A/D converter using two methods. One is a quantitative assessment based on the design parameters of the camera system, the other method compares the design parameters in comparison with those of the existing camera system in orbit for relative counting of the electrons and the signal level estimation. Chapter 2 describes the radiometry of the camera system of a satellite application to show equations for electron counting, Chapter 3 describes a camera system briefly to explain the data flow of imagery information from CCD and Chapter 4 explains the two methods for the analysis of the number of electrons and the signal level. Then conclusion is made in chapter 5.