• Title/Summary/Keyword: QDs

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Preparation and Characterization of CdTe Quantum Dots (CdTe 양자점 합성과 물리적 특성 분석)

  • 김현석;송현우;조경아;김상식;김성현
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.8
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    • pp.663-668
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    • 2003
  • CdTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. The synthesized CdTe QDs were identified to be cubic-structured ones by x-ray diffraction(XRD). The photoluminescence(PL) was performed for CdTe QDs prepared as a function of Te precursor concentration, condensation time and aging time. The PL intensity is strongly dependent on Te precursor concentration, indicating that the ratio of Te to Cd ions affects the particle size and size distribution of the CdTe QDs. Our PL study reveals that the intensity of PL peaks strengthens as the condensation time elongates, implying that annealing by thermal energy transferred during condensation would eliminate defects which act as killing centers in CdTe particles. Our photocurrent study suggests that the CdTe QDs materials are one of the prospective materials for optoelectronics including photodetectors.

Review of Low-Dimensional Nanomaterials for Blue-Light Emission

  • Won Kook Choi
    • Journal of Sensor Science and Technology
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    • v.32 no.6
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    • pp.391-402
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    • 2023
  • Low-dimensional (zero-dimensional (0-dim), 2-dimensional (2-dim)) nanoparticles, such as chalcogenide compound semiconductors, III-V semiconductors, transition metal dichalcogenides (TMDs), II-VI semiconductors, nanocarbons, hybrid quantum dots (QDs), and perovskite QDs (PQDs), for which blue light emission has been observed, are reviewed. Current synthesis and device fabrication technologies as well as their prospective applications on next-generation quantum-dot-based light-emitting diodes are discussed.

Influence of Raito of TGA(thioglycolic acid) on CdTe QDs Solution Stability for a Period of Time (CdTe QDs 용액 안정성의 장시간 유지지속을 위한 TGA(thioglycolic acid)의 첨가효과)

  • Kim, Jong-Hwan;Kim, Tae-Hee;Gwoo, Dong-Gun;Kee, Kyung-Bum;Choi, Won-Gyu;Han, Kung-Seok;Ryu, Bong-Ki
    • Korean Journal of Materials Research
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    • v.22 no.9
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    • pp.465-469
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    • 2012
  • This paper focuses on the after synthesis of CdTe quantum dots(QDs) in aqueous solution. CdTe nanoparticles were prepared in aqueous solution using mercaptocarboxylic acid or thioglycolic acid(TGA) as stabilizing agents. QDs emit light smaller than the nano size. The contents of the mercaptocarboxylic acid, and a kind of raw material, were revealed for a period of time. We succeeded in synthesizing a very high quality QDs solution; we discussed how to make QDs better and to keep them stabilized. TGA is known as one of the best stabilizing agents. Many papers have mentioned that TGA is a good stabilizing agent. We dramatically confirmed the state of QDs after the experiments. The QDs solution can be influenced by several factors. Different content of TGA can influence the stability of the CdTe solution. Most papers deal with the synthesis of CdTe, so we decided to discuss the after synthesis process for the stability of the CdTe solution.

Development of the Growth and Wavelength Control Technique of In As Quantum Dots for 1.3 μm Optical Communication Devices (1.3 μm 광통신용 소자를 위한 InAs 양자점 성장 및 파장조절기술 개발)

  • Park, Ho-Jin;Kim, Do-Yeob;Kim, Goon-Sik;Kim, Jong-Ho;Ryu, H.H.;Jeon, Min-Hyon;Leem, Jae-Young
    • Korean Journal of Materials Research
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    • v.17 no.7
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    • pp.390-395
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    • 2007
  • We systematically investigated the effects of InAs coverage variation, two-step annealing and an asymmetric InGaAs quantum well (QW) on the structural and optical characteristics of InAs quantum dots (QDs) by using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) measurement. The transition of size distribution of InAs QDs from bimodal to multi-modal was noticeably observed with increasing InAs coverage. By means of two-step annealing, it is found that significant narrowing of the luminescence linewidth (from 132 to 31 meV) from the InAs QDs occurs together with about 150 meV blueshift, compared to as-grown InAs QDs. Finally, the InAs QDs emitting at longer wavelength of $1.3\;{\mu}m$ with narrow linewidth were grown by an asymmetric InGaAs QW. The excited-state transition for the InAs QDs with an asymmetric InGaAs QW was not noticeably observed due to the large energy-level spacing between the ground states and the first excited states. The InAs QDs with an asymmetric InGaAs QW will be promising for the device applications such as $1.3\;{\mu}m$ optical-fiber communication.

Surface Treatment Method for Long-term Stability of CdSe/ZnS Quantum Dots (장시간 안정성을 위한 CdSe/ZnS 양자점의 표면처리 기술)

  • Park, Hyun-Su;Jeong, Da-Woon;Kim, Bum-Sung;Joo, So-Yeong;Lee, Chan-Gi;Kim, Woo-Byoung
    • Journal of Powder Materials
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    • v.24 no.1
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    • pp.1-5
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    • 2017
  • We have investigated the washing method of as-synthesized CdSe/ZnS core/shell structure quantum dots (QDs) and the effective surface passivation method of the washed QDs using PMMA. The quantum yield (QY%) of as-synthesized QDs decreases with time, from 79.3% to 21.1%, owing to surface reaction with residual organics. The decreased QY% is restored to the QY% of as-synthesized QDs by washing. However, the QY% of washed QDs also decreases with time, owing to the absence of surface passivation layer. On the other hand, the PMMA-treated QDs maintained a relatively higher QY% after washing than that of the washed QDs that were kept in toluene solution for 30 days. Formation of the PMMA coating layer on CdSe/ZnS QD surface is confirmed by HR-TEM and FT-IR. It is found that the PMMA surface coating, when combined with washing, is useful to be applied in the storage of QDs, owing to its long-term stability.

Sensitivity enhancement of H2 gas sensor using PbS quantum dots (황화납 양자점 감지막을 통해 감도가 개선된 수소센서)

  • Kim, Sae-Wan;Kim, Na-Ri;Kwon, Jin-Beom;Kim, Jae Keon;Jung, Dong Geon;Kong, Seong Ho;Jung, Daewoong
    • Journal of Sensor Science and Technology
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    • v.29 no.6
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    • pp.388-393
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    • 2020
  • In this study, a PbS quantum dots (QDs)-based H2 gas sensor with a Pd electrode was proposed. QDs have a size of several nanometers, and they can exhibit a high surface area when forming a thin film. In particular, the NH2 present in the ligand of PbS QDs and H2 gas are combined to form NH3+, subsequently the electrical characteristics of the QDs change. In addition to the resistance change owing to the reaction between Pd and H2 gas, the resistance change owing to the reaction between the NH2 of PbS QDs and H2 gas increases the current signal at the sensor output, which can produce a high output signal for the same concentration of H2 gas. Using the XRD and absorbance properties, the synthesis and particle size of the synthesized PbS QDs were analyzed. Using PbS QDs, the sensitivity was significantly improved by 44%. In addition, the proposed H2 gas sensor has high selectivity because it has low reactivity with heterogeneous gases such as C2H2, CO2, and CH4.

Anion Exchange Reaction Dynamics in Cesium Lead Halide Perovskite Quantum Dots (Cesium Lead Halide 페로브스카이트 양자점의 음이온 교환 반응 동역학)

  • Lee, See Maek;Jung, Hyunsung;Park, Woonik;Lim, Hyunseob;Bang, Jiwon
    • Journal of the Korean institute of surface engineering
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    • v.51 no.5
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    • pp.257-262
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    • 2018
  • Cesium lead halide perovskite quantum dots (QDs) have recently emerged as highly promising opto-electronic materials. Despite the relative facile anion exchange reactions in cesium lead halide perovskite QDs, in depth study of the anion exchange reactions such as reaction kinetics are required that can provide insight into the crystal transformation in the cesium lead halide perovskite QDs. Herein, we investigated the anion exchange reaction from $CsPbI_3$ QDs to $CsPbBr_3$ QDs with varying the particle size of the starting $CsPbI_3$ QDs. By characterizing the PL spectra in the anion exchange reaction process, we observed that discontinuous PL peak shifts during I-to-Br anion exchange reaction in starting $CsPbI_3$ QDs over a critical size. Origin of the discontinuous I-to-Br anion exchange kinetics are mainly due to thermodynamically unstable nature of the $CsPb(Br/I)_3$ alloy QDs.

InP/ZnSe/ZnS: A Novel Multishell System for InP Quantum Dots for Improved Luminescence Efficiency and Its application in a Light-Emitting Device

  • Ippen, Christian;Greco, Tonino;Wedel, Armin
    • Journal of Information Display
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    • v.13 no.2
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    • pp.91-95
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    • 2012
  • Indium phosphide (InP) quantum dots (QDs) are considered alternatives to Cd-containing QDs for application in light-emitting devices. The multishell coating with ZnSe/ZnS was shown to improve the photoluminescence quantum yield (QY) of InP QDs more strongly than the conventional ZnS shell coating. Structural proof for this system was provided by X-ray diffraction and transmission electron microscopy. QY values in the range of 50-70% along with peak widths of 45-50 nm can be routinely achieved, making the optical performance of InP/ZnSe/ZnS QDs comparable to that of Cd-based QDs. The fabrication of a working electroluminescent light-emitting device employing the reported material demonstrated the feasibility of the desired application.

Luminescent Characteristics of CdSe Quantum Dot Phosphor Depending on Se Precursor Ratio (Se 전구체 함량 따른 CdSe 양자점 형광체의 발광특성)

  • Eom, Nu Si A;Kim, Taek-Soo;Choa, Yong-Ho;Kim, Bum Sung
    • Journal of Powder Materials
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    • v.19 no.6
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    • pp.442-445
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    • 2012
  • The quantum dots (QD) have unique electrical and optical properties due to quantum dot confinement effect. The optical properties of QDs are decided by various synthesis conditions. In a prior QDs study, a study on the QDs size with synthesis condition such as synthesis time and temperature is being extensively researched. However, the research on QDs size with composition ratio has hitherto received scant attention. In order to evaluate the ratio dependence of CdSe crystal, synthesis ratio of Se precursor is changed from 16.7 mol%Se to 44 mol%Se. As the increasing Se ratio, the band gap was increased. This is caused by red shift of emission. We confirmed optical property of CdSe QDs with composition ratio.

Optical properties of InAs quantum dots with different size (InAs 양자점의 크기에 따른 분광학적 특성)

  • 권영수;임재영;이철로;노삼규;유연희;최정우;김성만;이욱현;류동현
    • Journal of the Korean Vacuum Society
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    • v.8 no.4A
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    • pp.450-455
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    • 1999
  • We present Photoluminescence (PL) and Atomic Force Microscopy (AFM) image on InAs quantum dots (QDs) having different size which grown by Molecualr Beam Epitaxy (MBE). For different size QDs, analysis of the AFM profiles show that the density of QDs was the maximum value $(1.1\times10^{11}\textrm{/cm}^2)$ at 2.0 ML. In the spectra of QDs, it is found that the peak energy decreases with increasing dot size due to the effect of quantum confinement. Temperature dependence of PL intensities show that the PL is quenching and Red shift as the temperature increase. The FWHM range of 20K~180K is narrowing with increasing temperature. When temperature is over 180K, the line-width starts to in creases with increasing temperature. At last, temperature dependence of the integrated intensities were fit using the Arrehenius-type function for the activation energy. Fit value of the activation energy was increased with increasing QDs-size.

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