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http://dx.doi.org/10.4313/JKEM.2003.16.8.663

Preparation and Characterization of CdTe Quantum Dots  

김현석 (고려대학교 전기공학과)
송현우 (고려대학교 전기공학과)
조경아 (고려대학교 전기공학과)
김상식 (고려대학교 전기공학과)
김성현 (고려대학교 화공생명공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.8, 2003 , pp. 663-668 More about this Journal
Abstract
CdTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. The synthesized CdTe QDs were identified to be cubic-structured ones by x-ray diffraction(XRD). The photoluminescence(PL) was performed for CdTe QDs prepared as a function of Te precursor concentration, condensation time and aging time. The PL intensity is strongly dependent on Te precursor concentration, indicating that the ratio of Te to Cd ions affects the particle size and size distribution of the CdTe QDs. Our PL study reveals that the intensity of PL peaks strengthens as the condensation time elongates, implying that annealing by thermal energy transferred during condensation would eliminate defects which act as killing centers in CdTe particles. Our photocurrent study suggests that the CdTe QDs materials are one of the prospective materials for optoelectronics including photodetectors.
Keywords
CdTe; Quantum Dots(QDs); Photoluminescence(PL); XRD; Photocurrent;
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Times Cited By KSCI : 1  (Citation Analysis)
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