• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.136.2-136.2
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• 2015

반도체 제조는 chip의 성능 향상 및 단가 하락을 위해 지속적으로 pattern size가 nano size로 감소해 왔고, capacitor 용량은 증가해 왔다. 이러한 현상은 contact hole의 aspect ratio를 지속적으로 증가시킨바, 그에 따라 최적의 HARC (high aspect ratio contact)을 확보하는 적합한 dry etch process가 필수적이다. 그러나 HARC dry etch process는 많은 critical plasma properties 에 의존하는 매우 복잡한 공정이다. 따라서, critical plasma properties를 적절히 조절하여 higher aspect ratio, higher etch selectivity, tighter critical dimension control, lower P2ID과 같은 plasma characteristics을 확보하는 것이 요구된다. 현재 critical plasma properties를 제어하기 위해 다양한 plasma etching 방법이 연구 되어왔다. 이 중 plasma를 낮은 kHz의 frequency에서 on/off 하는 pulsed plasma etching technique은 nanoscale semiconductor material의 etch 특성을 효과적으로 향상 시킬 수 있다. 따라서 본 실험에서는 dual-frequency capacitive coupled plasma (DF-CCP)을 사용하여 plasma operation 동안 duty ratio와 pulse frequency와 같은 pulse parameters를 적용하여 plasma의 특성을 각각 제어함으로써 etch selectivity와 uniformity를 향상 시키고자 하였다. Selective SiO2 contact etching을 위해 top electrode에는 60 MHz pulsed RF source power를, bottom electrode에는 2MHz pulse plasma를 인가하여 synchronously pulsed dual-frequency capacitive coupled plasma (DF-CCP)에서의 plasma 특성과 dual pulsed plasma의 sync. pulsing duty ratio의 영향에 따른 etching 특성 등을 연구 진행하였다. 또한 emissive probe를 통해 전자온도, OES를 통한 radical 분석으로 critical Plasma properties를 분석하였고 SEM을 통한 etch 특성분석과 XPS를 통한 표면분석도 함께 진행하였다. 그 결과 60%의 source duty percentage와 50%의 bias duty percentage에서 가장 향상된 etch 특성을 얻을 수 있었다.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.138-144
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• 1994

Electrical conduction phenomena of $C_{22}$-quinolium(TCNQ) Langmuir- Blodgett(LB) films are reported through a study of current-voltage(I-V) characteristics along a perpendicular direction. The I-V characteristics were investigated by applying a step or a pulse voltage to the specimen as well as changing temperatures in the range of 20-250[.deg. C] It show an ohmic behavior in low-electric field, and a nonohmic behavior in high-electric field. This nonohmic behavior has been interpreted in terms of a conduction mechanism of space-charge limited current and Schottky effect. When the electric field is near the strength of 10$_{6}$ V/cm, there occur anomalous phenomena similar to breakdown. When step or pulse voltage is applied, the breakdown voltage shifts to the higher one as the step or pulse time width becomes shorter. To see the influence of temperature, current was measured as a function of temperature under the several bias voltages, which are lower than that of breakdown. It shows that the current increases to about 103 times near 60-70[.deg. C], and remains constant for a while up to around 150[.deg. C] and then suddenly drops. We have also performed a DSC(differential scanning calorimetry) measurement with $C_{22}$-quinolium(TCNQ) powder in the range of 30-300[.deg. C]. These results imply that the anomalous phenomena occuring in the high electric field are caused by the electrical and internal thermal effect such as a joule heating.ating.

• Journal of Surface Science and Engineering
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• v.48 no.6
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• pp.360-370
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• 2015

As the size of the semiconductor devices shrinks to nanometer scale, the importance of plasma etching process to the fabrication of nanometer scale semiconductor devices is increasing further and further. But for the nanoscale devices, conventional plasma etching technique is extremely difficult to meet the requirement of the device fabrication, therefore, other etching techniques such as use of multi frequency plasma, source/bias/gas pulsing, etc. are investigated to meet the etching target. Until today, various pulsing techniques including pulsed plasma source and/or pulse-biased plasma etching have been tested on various materials. In this review, the experimental/theoretical studies of pulsed plasmas during the nanoscale plasma etching on etch profile, etch selectivity, uniformity, etc. have been summarized. Especially, the researches of pulsed plasma on the etching of silicon, $SiO_2$, and magnetic materials in the semiconductor industry for further device scaling have been discussed. Those results demonstrated the importance of pulse plasma on the pattern control for achieving the best performance. Although some of the pulsing mechanism is not well established, it is believed that this review will give a certain understanding on the pulsed plasma techniques.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.52-57
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• 2011

This paper presents a 4-channel optical transmitter circuit realized in a $0.18{\mu}m$ CMOS technology for high-speed digital interface. Particularly, the VCSEL driver exploits the feed-forward technique, and the pre-amplifier employs the pulse-width control. Thus, the optical transmitter operates at the bias current up to 4mA and the modulation current from $2{\sim}8mA_{pp}$. with the pulse-width distortion compensated effectively. The 4-channel optical transmitter array chip occupies the area of $1.0{\times}1.7mm^2$ and dissipates 35mW per channel at maximum current operations from a single 1.8V supply.

• Journal of Korean Critical Care Nursing
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• v.16 no.1
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• pp.1-14
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• 2023

Purpose : This study aimed to compare peripheral pulse oxygen saturation (SpO₂) values, measured at different monitoring sites, and arterial oxygen saturation (SaO₂) of neurocritical patients. Methods : The study included 110 patients admitted to the neurosurgical intensive care unit of a university hospital. The patients' SpO₂ values were measured in their index fingers, both second toes, both earlobes, and foreheads, using the patient monitoring system. These values were compared with the standard value of SaO₂ measured using a blood gas analyzer. Data were analyzed using descriptive values, Pearson's correlation coefficients, Lin's concordance correlation coefficients (CCC), and Bland-Altman plots. Result : Regardless of the measuring site, SpO₂ was correlated with the paired measurements of SaO₂ (r=.40~.60, p<.001, CCC range=.40~.58). No significant bias in paired measurements of SpO₂ and SaO₂ was observed at all sites (-0.06~0.19%, p>.05). SpO₂ values at the left finger and right earlobe had the narrowest range, with a 95% limits of agreement (LOA) (left finger -3.04~2.93% and right earlobe -3.18~2.79%). SpO₂ at the index finger, on the side without an arterial catheter, had a narrower range of 95% LOA than that of the opposing finger (-3.00~2.97% vs. -3.73~3.26%). Conclusion : SpO₂ at the finger without an arterial catheter had the highest level of precision. This study suggests using the index finger, on the side without an arterial catheter, for pulse oximetry in neurocritical patients.

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.1021-1030
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• 2023

We propose an overall procedure for measuring and unfolding fast neutron spectra using a trans-stilbene scintillation detector. Detector characterization was described, including the information on energy calibration, detector resolution, and nonproportionality response. The digital charge comparison method was used for the investigation of neutron-gamma Pulse Shape Discrimination (PSD). A pair of values of 600 ns pulse width and 24 ns delay time was found as the optimized conditions for PSD. A fitting technique was introduced to increase the trans-stilbene Proton Response Function (PRF) by 28% based on comparison of the simulated and experimental electron-equivalent distributions by the Cf-252 source. The detector response matrix was constructed by Monte-Carlo simulation and the spectrum unfolding was implemented using the iterative Bayesian method. The unfolding of simulated and measured spectra of Cf-252 and AmBe neutron sources indicates reliable, stable and no-bias results. The unfolding technique was also validated by the measured cosmic-ray induced neutron flux. Our approach is promising for fast neutron detection and spectroscopy.

• Journal of information and communication convergence engineering
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• v.5 no.2
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• pp.116-120
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• 2007

In this paper, the image sensor using the a-Si:H TFT is proposed. The optimum amorphous silicon thin film is deposited using plasma enhanced chemical vapor deposition (PECVD). TFT and photodiode both with the thin film are fabricated and form image sensor. The photodiode shows that $I_{dark}\;is\;{\sim}10^{-13}\;A,\;I_{photo}\;is\;{\sim}10^{-9}\;A\;and\;I_{photo}/I_{dark}\;is\;{\sim}10^4$, respectively. In the case of a-Si:H TFT, it indicates that $I_{on}/I_{off}\;is\;10^6$, the drain current is a few ${\mu}A\;and\;V_{th}\;is\;2{\sim}4$ volts. For the analysis on the fabricated image sensor, the reverse bias of -5 volts in ITO of photodiode and $70 {\mu}sec$ pulse in the gate of TFT are applied. The image sensor with good property was conformed through the measured photo/dark current.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.41 no.5
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• pp.43-48
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• 2004

A PWM Circuit using CMOS OTA is proposed. It features that the oscillation frequency is independent of supply voltage and temperature, and is linearly controlled by the bias current of OTA. The H-SPICE simulation results are given and they show good performance of the proposed circuit. The layout results using 0.3${\mu}{\textrm}{m}$ CMOS technology for IC implementation are also given.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.572-575
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• 2009

In this study, we proposed WLED(White-Light Emitting Diode) driver IC for mobile applications. This IC drove WLED for mobile applications with low input voltage and high efficiency by using boost converter. The device was designed by using boost converter applied current-mode control algorithm and provided PWM(Pulse Width Modulation) & analog dimming. Designed IC consisted of bias block, drive block, control block, protection block. We confirmed this device worked well through a application PCB (Printed Circuit Board) test.

• Journal of the Korean Institute of Telematics and Electronics
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• v.10 no.2
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• pp.7-15
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• 1973

The operation behaviors of negative-resistance multivibrators. are described. The oscillation phenomena in monostable and bistable mode negative-resistance circuits are analyzed by using a analog computer. It is presented that voltage-controlled negative -resistance switching circuits may be in oscillation state for a time or parmanently by adding the bias voltage or trigger pulse. The results show that the care must be taken for this fact in the constructions of negative resistance switching circuits.