• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.80-80
• /
• 2009

Recently, multiferroics have attracted much attention due to their numorous potentials. In this work, we attemped to utilize the multiferroics as an alternative material for ferroelectrics. Ferroelectric materials have been stadied to ferroelectric random access memories, however, some inevitable problems prevent it from inplementation. multiferroics shows a ferroelectricity and has low process temperature $BiFeO_3$(BFO) films have good ferroelectric properties but poor leakage characterization. Thus we tried, in this work, to adopt $HfO_2$ insulating layer for metal-ferroelectric-insulator-semiconductor(MFMIS) structure to surpress to leakage current. $BiFeO_3$(BFO) thin films were fabricared by using a sol-gel method on $HfO_2/Si$ structure. Ferroelectric BFO films on a p-type Si(100)wafer with a $HfO_2$ buffer layer have been fabricated to form a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The $HfO_2$ insulator were deposited by using a sol-gel method. Then, they were carried out a rapid thermal annealing(RTA) furnace at $750\;^{\circ}C$ for 10 min in $N_2$. BFO films on the $HfO_2/Si$ structures were deposited by sol-gel method and they were crystallized rapid thermal annealing in $N_2$ atomsphere at $550\;^{\circ}C$ for 5 min. They were characterized by atomic force microscopy(AFM) and Capacitance-voltage(C-V) curve.

• The Korean Journal of Ceramics
• /
• 제6권3호
• /
• pp.219-223
• /
• 2000

The ferroelectric SBT films were deposited on Pt/Ti/SiO$_2$/Si substrates by liquid injection metalorganic chemical vapor deposition (MOCVD) with single-mixture solution of Sr[Ta(OEt)$_5$(dmae)]$_2$and Bi(C$_6$ 6/H$_5$)$_3$. The Sr/Ta and Bi/Ta ratio in SBT films depended on deposition temperature and mol ratio of precursor in the single-mixture solution. At the substrate temperature of 40$0^{\circ}C$, Sr/Ta and Bi/Ta ratio were close to 0.4 and 1 at precursor mol ratio of 0.5~1.0, respectively. As-deposited film was amorphous. However, after annealing at 75$0^{\circ}C$ for 30 min in oxygen atmosphere, the diffraction patterns indicated polycrystalline SBT phase. The remanent polarization (Pr) and coercive field (Ec) of SBT film annealed at 75$0^{\circ}C$ were 4.7$\mu$C/$\textrm{cm}^2$ and 115.7kV/cm at an applied voltage of 5V, respectively. The SBT films annealed at 75$0^{\circ}C$ showed practically no polarization fatigue up to 10$^10$ switching cycles.

• 한국전기전자재료학회논문지
• /
• 제33권6호
• /
• pp.465-470
• /
• 2020

Heterolayered K(Ta,Nb)O₃/Pb(Zr,Ti)O₃ thin films on Pt/Ti/SiO₂/Si substrates were prepared by a sol-gel process and spin-coating method. The structural and electrical properties were measured to investigate the possibility of application as an electrocaloric effect device. All specimens exhibited dense and uniform cross-sectional structures without pores, and the average thickness of the specimen coated six times was approximately 394 nm. Curie temperatures were observed at 5℃ or less in type-I and 10℃ in type-II specimens, respectively. Type-II specimens coated 6 times showed a relative dielectric constant of 758 and remanent polarization of 9.71 μC/㎠ at room temperature. The maximum electrocaloric effect occurred between 20 and 25℃, slightly higher than their Curie temperature, and the electrocaloric property (ΔT) of the type-II specimens coated 6 times was approximately 1.2℃ at room temperature.

• 센서학회지
• /
• 제23권1호
• /
• pp.15-18
• /
• 2014

We present gas sensing performance based on $2{\times}2$ sensor array with four different elements ($TiO_2$, $SnO_2$, $WO_3$ and $In_2O_3$ thin films) fabricated by rf sputter. Each thin film was deposited onto the selected $SiO_2$/Si substrate with Pt interdigitated electrodes (IDEs) of $5{\mu}m$ spacing which were fabricated on a $SiO_2$/Si substrate using photolithography and dry etching. For 5 ppm $NO_2$ and 50 ppm CO, each thin film sensor has a different response to offers the distinguishable response pattern for different gas molecules. Compared with the conventional micro-fabrication technology, $2{\times}2$ sensor array with such remarkable response pattern will be open a new foundation for monolithic integration of high-performance chemoresistive sensors with simplicity in fabrication, low cost, high reliablity, and multifunctional smart sensors for environmental monitoring.

• 한국전기전자재료학회논문지
• /
• 제24권5호
• /
• pp.392-397
• /
• 2011

The effect of various post-annealing temperature to sputtered Pb(Zr,Ti)$O_3$ (PZT) thin films was investigated. The crystallization process, surface morphology and the electrical characteristics strongly depends on the rapid thermal annealing (RTA). In radio frequency (RF) sputtering methods, there were many papers mostly forcing on the crystal forming and the surface variations with different elements distribution (Pb, Ti, Zr, O) on the surface of the PZT layer. In this experiment, the post-annealing treatment promoted the Pb volatilization in PZT thin film and affected the Ti diffused throughout the Pt layer into the PZT layer. Second ion mass spectroscopy (SIMS) analysis was employed to show that the Pb element in the PZT layer was decreased at the same time the Ti element mass was slight decreased than Pb with increasing RTA temperature. That result prove the content of Pb affect the PZT thin film property.

• 센서학회지
• /
• 제11권6호
• /
• pp.358-364
• /
• 2002

본 논문에서는 백금박막 온도센서의 $0^{\circ}C$, $100{\Omega}$ 세팅을 위해 355nm 파장을 갖는 자외선 레이저를 이용하였다. 국제적으로 온도센서의 A-class 기준오차는 $0^{\circ}C$에서 ${\pm}0.060{\Omega}$이다. 실제적으로 이 값은 $0.15^{\circ}C$이하에 해당하는 오차로 저항체 제작시 고정밀 가공 기술을 필요로 한다. 가공에 이용된 355nm DYP(Diode-Pumped YAG) 레이저는 power : 37mW, rep rate 주파수 : 200Hz 그리고 bite size : $7.5{\mu}m$에서 $1{\sim}1.5{\mu}m$ 두께의 백금박막을 가장 안전하게 가공할 수 있었으며, 가공선폭은 $10{\mu}m$ 안팎임을 확인하였다. 그리고 사진식각 공정기술을 이용하여 제작된 $2"{\times}2"$ 기판내의 96개(4 by 24) 저항체는 상온 $25^{\circ}C$에서 $79{\sim}90{\Omega}$ : 42.7%, $91{\sim}102{\Omega}$ : 57.3%의 비율로 각각 제작되어졌다. $109.73{\Omega}$를 목표 값으로 $25^{\circ}C$에서 자외선 레이저를 이용하여 가공한 결과, 82.3%가 가공오차가 ${\pm}0.03{\Omega}$이하에 들어왔으며 나머지 17.7%도 국제규격 A-Class내인 ${\pm}0.06{\Omega}$내에 포함되었다.

• 한국진공학회지
• /
• 제9권3호
• /
• pp.258-262
• /
• 2000

$YMnO_3$박막은 고주파 스퍼터를 사용하여 Si(100)과 $Y_2O_3$/si(100)기판에 증착하였다. 증착시에 산소 분압의 조건과 열처리 온도는 YMnO$_3$ 박막의 결정성과 그 메모리 윈도우의 특성에 매우 중요한 영향을 주었다. XRD 측정 결과 산소 분압 0%에서 증착후 $870^{\circ}C$에서 1시간 동안 후열처리한 $YMnO_3$ 박막은 c-축을 따라 매우 잘 배향되었음을 확인하였다. 반면 산소분압 20%에서 Si(100)과 $Y_2O_3$/Si(100) 기판위에 증착된 $YMnO_3$박막의 결정화는 XRD측정 결과 $Y_2$O$_3$ peak가 보이는 것으로 보아 YMnO$_3$박막내에 과잉의 $Y_2O_3$가 c-축으로의 배향을 억제하는 것을 알 수 있다. 특히 산소분압 0%에서 증착한 Pt/$YMnO_3/Y_2O_3$/Si 구조에서의 메모리 윈도우 특성은 c-축으로 잘 배향된 결과로 인해 인가전압 2~12V에서 0.67-3.65V이었으며 이는 $Y_2O_3$/si 기판위에 산소분압 20%에서 증착한 박막 (0.19~1.21V)보다 동일한 인가전압에서 3배 정도의 큰 메모리 윈도우 특성을 보였다.

• 한국전기전자재료학회논문지
• /
• 제35권5호
• /
• pp.499-503
• /
• 2022

La_0.7Sr_0.3MnO₃ precursor solution were prepared by a sol-gel method. La_0.7Sr_0.3MnO₃ thin films were fabricated by a spin-coating method on a Pt/Ti/SiO₂/Si substrate. Structural and electrical properties with the variation of sintering temperature were measured. All specimens exhibited a polycrystalline orthorhombic crystal structure, and the average thickness of the specimens coated 6 times decreased from about 427 nm to 383 nm as the sintering temperature increased from 740℃ to 830℃. Electrical resistance decreased as the sintering temperature increased. In the La_0.7Sr_0.3MnO₃ thin films sintered at 830℃, electrical resistivity, TCR, B-value, and activation energy were 0.0374 mΩ·cm, 0.316%/℃, 296 K and 0.023 eV, respectively.

• 한국재료학회지
• /
• 제17권2호
• /
• pp.96-99
• /
• 2007

The effects of post-annealing of high-k $HfO_2$ thin films grown by atomic layer deposition method were investigated by the annealing treatments of $400-600^{\circ}C$. $Pt/HfO_2/p-Si\;MOS$ capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the $500^{\circ}C-annealed\;HfO_2$ film remained to be amorphous, and the $600^{\circ}C-annealed\;HfO_2$ film was crystallized. The annealing treatment at $500^{\circ}C$ resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the $HfO_2$ films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.

• 센서학회지
• /
• 제7권2호
• /
• pp.103-110
• /
• 1998

강유전체 박막과 마이크로 가공기술을 이용하여 초전형 적외선 센서를 제작하였다. 초전형 적외선 센서는 $Pb_{l-x}La_{x}Ti_{1-x/4}O_{3}$ (x=0.05) (PLT) 강유전체 박막 커패시터를 RF 마그네트론 스퍼터링 방식으로 백감 전극이 증착된 MgO 기판상에 결정 성장시킨 구조를 갖고 있다. 스퍼터링된 PLT 박막은 높은 c-축 결정 구조를 가지므로 센서로 사용하기 위한 분극 처리 과정이 필요 없다. 이는 적외선 이미지 센서를 구현함에 있어서 수율 향상에 필수적인 요소이다. 또한 마이크로 가공 기술을 사용하여 센서의 열용량을 극소화함으로서 센서의 효율을 최대화하였다. 제작된 센서의 상부에 폴리이미드를 코팅하고 MgO 기판을 선택적으로 식각하여 코팅된 폴리이미드와 MgO가 강유전체 박막 커패시터를 지지하고 있는 구조를 구현하였다. 이렇게 제작된 센서의 감도는 상온에서 $8.5{\times}10^{8}cm{\cdot}\sqrt{Hz}/W$로 측정되었으며 이는 마이크로 가공 기술을 사용하지 않은 경우보다 약 100 배의 감도 향상을 가져왔다. 2차원 배열 구조를 갖는 센서를 가지고 인체의 유 무 뿐만 아니라 위치까지 감별할 수 있는 센싱 시스템을 구현하였다.