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http://dx.doi.org/10.3740/MRSK.2007.17.2.096

Effects of Post-Annealing on Properties of HfO2 Films Grown by ALD  

Lee, J.W. (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University)
Ham, M.H. (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University)
Maeng, W.J. (Department of Materials Science and Engineering, Pohang University of Science and Technology)
Kim, H. (Department of Materials Science and Engineering, Pohang University of Science and Technology)
Myoung, J.M. (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University)
Publication Information
Korean Journal of Materials Research / v.17, no.2, 2007 , pp. 96-99 More about this Journal
Abstract
The effects of post-annealing of high-k $HfO_2$ thin films grown by atomic layer deposition method were investigated by the annealing treatments of $400-600^{\circ}C$. $Pt/HfO_2/p-Si\;MOS$ capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the $500^{\circ}C-annealed\;HfO_2$ film remained to be amorphous, and the $600^{\circ}C-annealed\;HfO_2$ film was crystallized. The annealing treatment at $500^{\circ}C$ resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the $HfO_2$ films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.
Keywords
Hafnium oxide; ALD (Atomic Layer Deposition); dielectric constant; leakage current;
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