Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effects of Post-Annealing on Properties of HfO2 Films Grown by ALD

ALD법으로 성장한 HfO2 박막의 열처리에 따른 특성변화

  • Lee, J.W. (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Ham, M.H. (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Maeng, W.J. (Department of Materials Science and Engineering, Pohang University of Science and Technology) ;
  • Kim, H. (Department of Materials Science and Engineering, Pohang University of Science and Technology) ;
  • Myoung, J.M. (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University)
  • 이재웅 (연세대학교 신소재공학과) ;
  • 함문호 (연세대학교 신소재공학과) ;
  • 맹완주 (포항공과대학교 신소재공학과) ;
  • 김형준 (포항공과대학교 신소재공학과) ;
  • 명재민 (연세대학교 신소재공학과)
  • Published : 2007.02.27
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Abstract

The effects of post-annealing of high-k $HfO_2$ thin films grown by atomic layer deposition method were investigated by the annealing treatments of $400-600^{\circ}C$. $Pt/HfO_2/p-Si\;MOS$ capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the $500^{\circ}C-annealed\;HfO_2$ film remained to be amorphous, and the $600^{\circ}C-annealed\;HfO_2$ film was crystallized. The annealing treatment at $500^{\circ}C$ resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the $HfO_2$ films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.

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References

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