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http://dx.doi.org/10.4313/JKEM.2011.24.5.392

Study of Effect of PZT Thin Film Prepared in Different Post-Annealing Temperature Using SIMS  

Shenteng, Shenteng (Department of Information and Communication Engineering, Sungkyunkwan University)
Lee, Tae-Yong (Department of Information and Communication Engineering, Sungkyunkwan University)
Lee, Kyung-Chun (Department of Information and Communication Engineering, Sungkyunkwan University)
Hur, Won-Young (Department of Information and Communication Engineering, Sungkyunkwan University)
Shin, Hyun-Chang (Department of Information and Communication Engineering, Sungkyunkwan University)
Kim, Hyun-Duk (Department of Information and Communication Engineering, Sungkyunkwan University)
Song, Joon-Tae (Department of Information and Communication Engineering, Sungkyunkwan University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.5, 2011 , pp. 392-397 More about this Journal
Abstract
The effect of various post-annealing temperature to sputtered Pb(Zr,Ti)$O_3$ (PZT) thin films was investigated. The crystallization process, surface morphology and the electrical characteristics strongly depends on the rapid thermal annealing (RTA). In radio frequency (RF) sputtering methods, there were many papers mostly forcing on the crystal forming and the surface variations with different elements distribution (Pb, Ti, Zr, O) on the surface of the PZT layer. In this experiment, the post-annealing treatment promoted the Pb volatilization in PZT thin film and affected the Ti diffused throughout the Pt layer into the PZT layer. Second ion mass spectroscopy (SIMS) analysis was employed to show that the Pb element in the PZT layer was decreased at the same time the Ti element mass was slight decreased than Pb with increasing RTA temperature. That result prove the content of Pb affect the PZT thin film property.
Keywords
PZT; SIMS; Annealing; RF sputtering;
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