• Journal of the Korean institute of surface engineering
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• v.43 no.2
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• pp.47-50
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• 2010

This work discusses a two-step electroless plating method for preparing a Pt thin film on p-type InGaAs substrate, which is defined as Pt I and Pt II. A thin Pt catalytic layer formed in Pt I bath on the substrate at $65^{\circ}C$. In the following Pt II bath, thick Pt films then easily grew on the sensitized layer on InGaAs previously formed in the Pt I bath. The growth of Pt film is strongly influenced by the plating temperature and pH value. To study the plating time effect, the plating of Pt II bath is 5 to 40 min at $80^{\circ}C$ after using Pt I bath at 50~$65^{\circ}C$ for 5min of pH 8~13. Pt film for ohmic contact to p-type InGaAs was successfully prepared by using the two-step Pt electroless plating.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.230-234
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• 2003

CuPt-type ordering has been observed in Zn-rich $Cd_xZn_{1-x}$Te epilayers grown on (001)GaAs and ZnTe/GaAs(001) substrates. X-ray diffraction, electron beam diffraction, high-resolution transmission electron microscopy and low-temperature photoluminescence have been used to characterize the CuPt-type ordering in Zn-rich $Cd_xZn_{1-x}$Te epilayers.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.2
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• pp.67-74
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• 1994

Effects of the GaAs semiconductor particles on electrophysical phenomena at the Pt electrode/10S0-3TM KCl aqueous electrolyte interfaces have been studied using voltammetric time based and electrochemical impedance techniques. The anodic decomposition effect f the GaAs semiconductor particles on electrophysical phenomena was significantly observed during the positive potential scan (0 to 1.0 V vs. SCE). On the other hand, the cathodic decomposition effect of the GaAs semiconductor particles was negligible during thenegative potential scan (0 to -1.0 V vs. SCE). The GaAs semiconductor particles act as current activators or mediators during the anodic process and act as charge screens during the cathodic process. The electrolyte resistance and related impedance was increased due to the presence of the GaAs semiconductor particles. The anodic decomposition effect of the GaAs semiconductor particles can directly be applied to activate the hydrogen evolution.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.629-632
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• 2006

Electrical characteristics of Pt/Ti/Pt/Au and Pd/Zn/Pd/Au contacts to p-type InGaAs grown on an InP substrate have been characterized as a function of the doping concentration and the annealing temperature. The Pt/Ti/Pt/Au contacts produced the specific contact resistance as low as $2.3{\times}10^{-6}{\Omega}{\cdot}cm^2$, when heat-treated at an annealing temperature of $400^{\circ}C$. Comparison of the Pt/Ti/Pt/Au and Ti/Pt/Au contacts showed that the first Pt layer plays an important role in reducing the contact resistivity probably by lowering energy barrier at the metal-semiconductor interface. For the Pd/Zn/Pd/Au contacts, the contact resistivity remained virtually unchanged with increasing annealing temperature. The specific contact resistivity as low as $4.7{\times}10^{-6}{\Omega}{\cdot}cm^2$ was obtained. The results indicate that the Pt/Ti/Pt/Au and Pd/Zn/Pd/Au schemes could be potentially important for the fabrication of InP-based optoelectronic devices, such as photodetector and optical modulator.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.218-227
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• 2003

Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.219-224
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• 2001

Pd/Ge/Ti/Pt ohmic contact to n-type InCaAs was investigated. Minimum specific contact resistivity of $3.7\times10^{-6}\; \Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $400^{\circ}C$ for 10 seconds. This was related to the formation of Pd-Ge compounds and the in-diffusion of Ge atoms to InGaAs surface. However, the specific contact resistivity increased slightly to $low-10^5\; \Omega\textrm{cm}^2$ in the case of longer annealing time. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained after annealing at high temperature. Therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.3
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• pp.101-107
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• 1990

In this work, one-dimensional simulation is carried out for PT-GaAs Schottky barrier diodes with finite difference method. Shockley's semiconductor governing equations: Poisson equation and current continuity equation are discertized, and linearized by Newton-Raphson method. The linear system of equation is solved by Gaussian elimination method until convergence is achieved. The boundary condition for this equation is taken from thermionic emission-diffusion theory. Simulation is done for PT-GaAs epitaxial-layer Schottky barrier diodes. The claculated results of electron and potential distribution are shown. Simulation results show exellent agreement with experiments.

• Korean Journal of Materials Research
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• v.16 no.3
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• pp.151-156
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• 2006

A method for fabrication of nano-scale GaN structure by inductively coupled plasma etching is proposed, exploiting a thermal dewetting of Pt thin film as an etch mask. The nano-scale Pt metal islands were formed by the dewetting of 2-dimensional film on $SiO_2$ dielectric materials during rapid thermal annealing process. For the case of 30 nm thick Pt films, pattern formation and dewetting was initiated at temperatures greater $600^{\circ}C$. Controlling the annealing temperature and time as well as the thickness of the Pt metal film affected the size and density of Pt islands. The activation energy for the formation of Pt metal island was calculated to be 23.2 KJ/mole. The islands show good resistance to dry etching by a $CF_4$ based plasma for dielectric etching indicating that the metal islands produced by dewetting are suitable for use as an etch mask in the fabrication of nano-scale structures.

• Journal of the Korean Magnetics Society
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• v.17 no.6
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• pp.221-225
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• 2007

The effects of $Ga^+$ ion irradiation on the magnetic properties of the $Co_{73}Pt_{27}-TiO_2$ perpendicular magnetic recording media were investigated. As $Ga^+$ ion dose increased from $1\times10^{15}ions/cm^2\;to\;30\times10^{15}ions/cm^2$, the perpendicular magnetic anisotropy was degraded and no longer observed above $20\times10^{15}ions/cm^2$ dose. The deterioration of the perpendicular magnetic anisotropy and ferromagnetic properties can be attributed to the concentration profile change due to Ga+ ion implantation. The magnetic islands of $70\times70nm^2\;and\;100\times100nm^2$ size were successfully fabricated with $Ga^+$ ion irradiation.

• Journal of the Korean institute of surface engineering
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• v.42 no.4
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• pp.152-156
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• 2009

Electroless plating is influenced by kinds of parameters including concentrations of electrolyte, plating time, temperature and so on. In this study, the Pt thin films were prepared on GaAs substrate by a 2-step electroless plating depending method. The small Pt catalytic particles by using Pt I bath exhibited islands-morphology dispersed throughout the substrate surface at $65^{\circ}C$, as function as a sensitized thin film, and then a thicker Pt film grew upon the sensitized layer by the second Pt II bath. As the growth of Pt film is strongly influenced by the plating time and temperature, the plating time of Pt II bath varied from 5 min to 40 min at $60{\sim}80^{\circ}C$ after Pt I bath at $60{\sim}80^{\circ}C$ for 5 min. It is found that the film grows with the increasing plating time and temperature. The resistivity value of Pt deposited layer was characterized to study the growth mechanism of 2-step plating.