• 대한전자공학회논문지SD
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• 제46권10호
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• pp.25-30
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• 2009

오존을 이용하여 PR 박리에 사용된 에틸렌 카보네이트계 박리 세정제를 재이용할 수 있는 기술에 대하여 연구함으로써 향후 고성능-저가격의 반도체, LCD 제조에서의 PR 박리 및 세정 공정에 적용할 수 있는 핵심 공정기술을 확보하였다. 이 기술을 적용하면 반도체 웨이퍼 및 LCD 평판의 PR 박리 세정을 보다 빠르고 저렴한 비용으로 수행할 수 있으므로 반도체 및 LCD 제작공정의 생산성을 향상시킬 수 있다.

• 대한기계학회논문집B
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• 제22권12호
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• pp.1784-1795
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• 1998

Natural convection of low Prandtl number fluids with $Pr{\leq}0.2$ in a narrow horizontal annulus is numerically investigated. For $Pr{\leq}0.2$, hydrodynamic instability induces oscillatory multicellular flows consisting of multiple like-rotating cells. For a fluid with $Pr{\approx}0$, the region in which instability of conduction regime first forms is near the vertical section of annulus, and the multiple cells are distributed uniformly in the lower and upper regions of annulus. As Pr increases, however, the cells are shifted upwards. The like-rotating cells drift downward, as time goes on, and the speed of travel increases with increase of Pr. For a fluid with Pr=0.1, a flow with period-4 solution is observed between chaotic states.

• 대한기계학회논문집B
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• 제22권3호
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• pp.360-372
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• 1998

This study deals with the interaction between buoyancy-induced convection and externally imposed excitation in the form of harmonic rocking and the effect of the interaction upon heat transfer in low-Pr liquids. A wide array of system responses are discussed using the spectral collocation numerical technique. The superposition of buoyancy and Coriolis forces leads to complex fluid flow and heat transfer. The transition to chaotic convection is accelerated, and heat transfer rates are reduced as the enclosure is excited at the fundamental frequency of oscillation associated with the pure buoyancy-driven case. Average heat transfer rates are correlated for Pr=0.02 and 0.03. The heat transfer is affected more in the Pr=0.03 liquid than the case of Pr=0.02.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.33-34
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• 2000

The effect of $Y^{3+}$ addition to $SrTiO_3:Pr^{3+}$ on the photoluminescence and cathodoluminescence was studied. We discovered that light emitting levels of $Pr^{3+}$ vary by addition of $Y^{3+}$. In $(Sr_{1-x}Y_x)TiO_3:Pr^{3+}$, both the green and red emission are discovered while the red emission prevails in $Sr(Ti_{1-x}Y_x)O_3:Pr^{3+}$ . $Sr(Ti_{1-x}Y_x)O_3:Pr^{3+}$ shows enhancement of red emission by two kinds of enhancement process.

• 한국통신학회논문지
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• 제9권1호
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• pp.11-17
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• 1984

本論文에서는 帶域幅效率을 높이기 위해서 Partial Response Signaling(PRS)을 利用한 PR shaped된 SQAM(staggered quadrature amplitude modulation)에 대하여 硏究하였다. 硏究過程에 있어서 誤率의 上限値를 구하여 서로 比較하였으며 그 結果 誤差가 3$^{\circ}$보다 작으면(Class I, II, IV)PR 시스템을 使用目的에 따라 別差異없이 使用할 수 있지만 3以上이 되면 Class I을 使用해야 한다는 結論을 얻었다.

• Journal of Plant Biotechnology
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• 제42권1호
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• pp.25-33
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• 2015

배 검은별무늬병 고도저항성 '93-3-98'과 고도감수성 '스위트스킨'간의 suppression subtractive hybridization 분석을 통해 '93-3-98'에서 특이적으로 발현되는 pathogenesis-related 10 (PR-10) 유전자를 분리하여 PyrcpPR-10으로 명명하고 기관 및 품종별 발현양상을 분석하였다. 단편염기서열의 rapid amplification of cDNA ends PCR을 통해 PyrcpPR-10 유전자는 전체길이가 743bp이고, 480bp의 ORF와 159개의 아미노산을 가지는 것으로 확인되었다. PyrcpPR-10 유전자의 염기서열은 '황실리'(저항성), '감천배'(중도저항성), '원황'(중도감수성), '신고', '스위트스킨'(고도감수성)은 동일하였으나 'Bartlett'(고도저항성)은 일부 염기서열의 차이를 보였다. BLAST X를 통한 다른 식물 종의 PR-10 아미노산과 비교에서 64 ~ 98%의 상동성을 보였고 공통적으로 GXGGXG motif를 가지고 있었다. 기관 및 조직별 PyrcpPR-10 유전자의 발현량은 꽃잎이 가장 높았으며 다음으로 잎, 꽃대, 눈, 수피 순이었다. 저항성과 감수성 품종에 따른 PyrcpPR-10 유전자의 발현양상은 모든 품종에서 접종 24시간 후 급격히 증가였으며, 특히 'Bartlett', '93-3-98', '황실리'에서 높게 발현되었고 '감천배', '원황'의 경우 저항성 품종에 비해 상대적으로 낮았으며, 고도 감수성 '신고', '스위트스킨'은 발현이 가장 낮았다. 배에서 분리한 PyrcpPR-10 유전자는 검은별무늬병 저항성에 직접 연관되는 것으로 추정된다.

• 한국세라믹학회지
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• 제39권11호
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• pp.1023-1027
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• 2002

본 연구에서는 초임계 mixing을 이용하여 $SrTiO_3:\;Pr^{3+}$ 형광체 분말을 제조하였으며, 일반적 제조 방법인 고상법으로 제조된 분말과 발광특성을 비교하였다. 초임계 mixing에 의해 제조된 $SrTiO_3:\;Pr^{3+}$ 형광체 분말은 단상의 perovskite 구조를 갖으며, 형상은 구형인 좁은 입도분포를 보인다. 발광특성의 증대를 sensitizer인 $Al^{3+}$과 $Ga^{3+}$을 첨가하여 형광체의 발광특성을 관찰하였다.

• IMMUNE NETWORK
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• 제13권4호
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• pp.148-156
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• 2013

The $PrP^C$ is expressed in many types of immune cells including monocytes and macrophages, however, its function in immune regulation remains to be elucidated. In the present study, we examined a role for $PrP^C$ in regulation of monocyte function. Specifically, the effect of a soluble form of $PrP^C$ was studied in human monocytes. A recombinant fusion protein of soluble human $PrP^C$ fused with the Fc portion of human IgG1 (designated as soluble $PrP^C$-Fc) bound to the cell surface of monocytes, induced differentiation to macrophage-like cells, and enhanced adherence and phagocytic activity. In addition, soluble $PrP^C$-Fc stimulated monocytes to produce pro-inflammatory cytokines such as $TNF-{\alpha}$, $IL-1{\beta}$, and IL-6. Both ERK and $NF-{\kappa}B$ signaling pathways were activated in soluble $PrP^C$-treated monocytes, and inhibitors of either pathway abrogated monocyte adherence and cytokine production. Taken together, we conclude that soluble $PrP^C$-Fc enhanced adherence, phagocytosis, and cytokine production of monocytes via activation of the ERK and $NF-{\kappa}B$ signaling pathways.

• 한국가축번식학회지
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• 제19권3호
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• pp.235-241
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• 1995

These experiments were carried out to find genetic polymorphisms of Serum protein like Pre-albumin(Pr), Albumin(Al) and Transferrin(Tf), and establish preservation of pure pedigree in Korean Native Goats(KNG). Their serum was collected and examined from the total of 74 KNG that raised in Tang Jin district, Chungnam-province. They were biochemically analysed by polyacrylamide gel(7.5%) electrophoresis(PAGE) in order to estimate the frequencies of genotypes and alleles existing on each trait locus. The results obtained in these experiments were summarized as follows ; 1. In the serum Pre-albumin(Pr) locus, the frequencies of genotypes for hetero AB and homo BB observed were 55.4%, and 44.6%, respectively. While homo AA was not found in the Pr locus. The frequencies of gene in PrA and PrB were 0.723 and 0.277, respectively. Accordingly, the Pr loci were assumed to be controlled by alleles PrA and PrB. 2. The frequencies of genotypes of homo BB and hetero AB detected in Albumin(Al) locus were 75.7% and 24.3%, respectively. However, AA type was not observed in the Al locus. The gene frequencies of AlA an AlB were 0.879 and 0.121, respectively. Also, the Al loci were considered to be controlled by alleles AlA and AlB. 3. The frequencies of genotypes for hetero AD and homo DD found in Transferrin (Al) locus were 79.7% and 20.3%, respectively. Whereas, homotype AA was not detected in this locus. The gene frequencies of TfA and TfD were 0.399 and 0.601, respectively. Therefore, the serum Tf loci were assumed to be controlled by alleles Tfa and Tfd.

• 한국재료학회지
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• 제28권4호
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• pp.208-213
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• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.