• 제목/요약/키워드: Power supply noise

검색결과 483건 처리시간 0.026초

65-nm CMOS 공정을 이용한 94 GHz 고이득 차동 저잡음 증폭기 설계 (Design of 94-GHz High-Gain Differential Low-Noise Amplifier Using 65-nm CMOS)

  • 서현우;박재현;김준성;김병성
    • 한국전자파학회논문지
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    • 제29권5호
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    • pp.393-396
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    • 2018
  • 본 논문은 65-nm 저전력 CMOS 공정을 이용해 94 GHz 대역 저잡음 증폭기를 설계한 결과를 제시한다. 설계한 저잡음 증폭기는 4단 차동 공통소스 구조를 가지며, 트랜스포머를 사용해 각 단 및 입출력 임피던스 정합 회로를 구성했다. 제작한 저잡음 증폭기는 94 GHz에서 최대 전력 이득 25 dB을 보이며, 3-dB 대역폭은 5.5 GHz이다. 제작한 칩의 면적은 패드를 포함해 $0.3mm^2$이며, 1.2 V 공급 전원에서 46 mW의 전력을 소비한다.

65-nm CMOS 공정을 이용한 V-Band 차동 저잡음 증폭기 설계 (Design of V-Band Differential Low Noise Amplifier Using 65-nm CMOS)

  • 김동욱;서현우;김준성;김병성
    • 한국전자파학회논문지
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    • 제28권10호
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    • pp.832-835
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    • 2017
  • 본 논문은 고속 무선 데이터 통신을 위한 V-band 차동 저잡음 증폭기를 65-nm CMOS 공정을 이용하여 설계한 결과를 제시한다. 설계한 저잡음 증폭기는 3단 공통소스 구조이며, MOS 커패시터를 이용한 커패시턴스 중화 기법을 적용하였고, 트랜스포머를 이용하여 각 단의 임피던스 정합을 구현하였다. 제작한 저잡음 증폭기는 63 GHz에서 최대 이득 23 dB을 보이며, 3 dB 대역폭은 6 GHz이다. 제작한 칩의 크기는 패드를 포함하여 $0.3mm^2$이며, 1.2 V 공급 전원에서 32 mW의 전력을 소비한다.

Implementation of sigma-delta A/D converter IP for digital audio

  • Park SangBong;Lee YoungDae
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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    • pp.199-203
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    • 2004
  • In this paper, we only describe the digital block of two-channel 18-bit analog-to-digital (A/D) converter employing sigma-delta method and xl28 decimation. The device contains two fourth comb filters with 1-bit input from sigma­delta modulator. each followed by a digital half band FIR(Finite Impulse Response) filters. The external analog sigma-delta modulators are sampled at 6.144MHz and the digital words are output at 48kHz. The fourth-order comb filter has designed 3 types of ways for optimal power consumption and signal-to-noise ratio. The following 3 digital filters are designed with 12tap, 22tap and 116tap to meet the specification. These filters eliminate images of the base band audio signal that exist at multiples of the input sample rate. We also designed these filters with 8bit and 16bit filter coefficient to analysis signal-to-noise ratio and hardware complexity. It also included digital output interface block for I2S serial data protocol, test circuit and internal input vector generator. It is fabricated with 0.35um HYNIX standard CMOS cell library with 3.3V supply voltage and the chip size is 2000um by 2000um. The function and the performance have been verified using Verilog XL logic simulator and Matlab tool.

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Multiple Gated Transistors의 Derivative Superposition Method를 이용한 CMOS Low Noise Amplifier의 선형성 개선 (Improving the Linearity of CMOS Low Noise Amplifier Using Multiple Gated Transistors)

  • 양진호;김희중;박창준;최진성;윤제형;김범만
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.505-506
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    • 2006
  • In this paper, the linearization technique for CMOS low-noise amplifier (LNA) using the derivative superposition method through the multiple gated transistors configuration is presented. LNA based on 0.13um RF CMOS process has been implemented with a modified cascode configuration using multiple gated common source transistors to fulfill a high linearity. Compared with a conventional cascode type LNA, the third order input intercept point (IIP3) per DC power consumption (IIP3/DC) is improved by 3.85 dB. The LNA achieved 2.5-dBm IIP3 with 13.4-dB gain, 3.6 dB NF at 2.4 GHz consuming 8.56 mA from a 1.5-V supply.

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빠른 스위칭 시간과 저 위상잡음 특성을 가지는 PHS용 주파수 합성기의 설계 (A design of fast switching time, low phase noise PHS frequency synthesizer)

  • 정성규;정지훈;부영건;김진경;장석환;이강윤
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.499-500
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    • 2006
  • This paper presents a fast switching CMOS frequency synthesizer with a new coarse tuning method for PHS applications. To achieve the fast lock-time and the low phase noise performance, an efficient bandwidth control scheme is proposed. Charge pump up/down current mismatches are compensated with the current mismatch compensation block. Also, the proposed coarse tuning method selects the optimal tuning capacitances of the LC-VCO to optimize the phase noise and the lock-time. The measured lock-time is about $20{\mu}s$. This chip is fabricated with $0.25{\mu}m$ CMOS technology, and the die area is $0.7mm{\times}2.1mm$. The power consumption is 54mW at 2.7V supply voltage.

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800MHz~5.8GHz 광대역 CMOS 저잡음 증폭기 설계 (A 800MHz~5.8GHz Wideband CMOS Low-Noise Amplifier)

  • 김혜원;탁지영;이진주;신지혜;박성민
    • 대한전자공학회논문지SD
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    • 제48권12호
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    • pp.45-51
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    • 2011
  • 본 논문에서는 $0.13{\mu}m$ CMOS 공정을 사용하여 800MHz~5.8GHz 대역 내 다양한 무선통신 표준을 포함하는 광대역 저잡음 증폭기(wideband-LNA)를 구현하였다. 저잡음 특성을 개선하기 위하여 제작한 LNA는 두 단으로 구성되었으며, 입력캐스코드 단 및 잡음신호만을 상쇄시키는 출력 버퍼단으로 구성하였다. 또한, 피드백 저항을 이용함으로써, 광대역 임피던스 매칭 효과 및 넓은 대역폭을 구현하였다. 측정결과, 811MHz~5.8GHz의 주파수 응답과 대역폭 내에서 최대 11.7dB의 전력이득 및 2.58~5.11dB의 잡음지수(NF)를 얻었다. 제작한 칩은 $0.7{\times}0.9mm^2$의 면적을 가지며 1.2V의 전원전압에서 12mW의 낮은 전력을 소모 한다.

Low-Power Direct Conversion Transceiver for 915 MHz Band IEEE 802.15.4b Standard Based on 0.18 ${\mu}m$ CMOS Technology

  • Nguyen, Trung-Kien;Le, Viet-Hoang;Duong, Quoc-Hoang;Han, Seok-Kyun;Lee, Sang-Gug;Seong, Nak-Seon;Kim, Nae-Soo;Pyo, Cheol-Sig
    • ETRI Journal
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    • 제30권1호
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    • pp.33-46
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    • 2008
  • This paper presents the experimental results of a low-power low-cost RF transceiver for the 915 MHz band IEEE 802.15.4b standard. Low power and low cost are achieved by optimizing the transceiver architecture and circuit design techniques. The proposed transceiver shares the analog baseband section for both receive and transmit modes to reduce the silicon area. The RF transceiver consumes 11.2 mA in receive mode and 22.5 mA in transmit mode under a supply voltage of 1.8 V, in which 5 mA of quadrature voltage controlled oscillator is included. The proposed transceiver is implemented in a 0.18 ${\mu}m$ CMOS process and occupies 10 $mm^2$ of silicon area.

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A 1.2 V 12 b 60 MS/s CMOS Analog Front-End for Image Signal Processing Applications

  • Jeon, Young-Deuk;Cho, Young-Kyun;Nam, Jae-Won;Lee, Seung-Chul;Kwon, Jong-Kee
    • ETRI Journal
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    • 제31권6호
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    • pp.717-724
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    • 2009
  • This paper describes a 1.2 V 12 b 60 MS/s CMOS analog front-end (AFE) employing low-power and flexible design techniques for image signal processing. An op-amp preset technique and programmable capacitor array scheme are used in a variable gain amplifier to reduce the power consumption with a small area of the AFE. A pipelined analog-to-digital converter with variable resolution and a clock detector provide operation flexibility with regard to resolution and speed. The AFE is fabricated in a 0.13 ${\mu}m$ CMOS process and shows a gain error of 0.68 LSB with 0.0352 dB gain steps and a differential/integral nonlinearity of 0.64/1.58 LSB. The signal-to-noise ratio of the AFE is 59.7 dB at a 60 MHz sampling frequency. The AFE occupies 1.73 $mm^2$ and dissipates 64 mW from a 1.2 V supply. Also, the performance of the proposed AFE is demonstrated by an implementation of an image signal processing platform for digital camcorders.

임의 파형 발생기를 위한 단일 루프 전압 제어기 설계 (Design of the Single-loop Voltage Controller for Arbitrary Waveform Generator)

  • 김현식;지승준;설승기
    • 전력전자학회논문지
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    • 제21권1호
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    • pp.58-64
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    • 2016
  • This study presents a design method for a single-loop voltage controller that is suitable for an arbitrary waveform generator (AWG). The voltage control algorithm of AWG should ensure high dynamic performance and should attain sufficient robustness to disturbances such as inverter nonlinearity, sensor noise, and load current. By analyzing the power circuit of AWG, control limitation and control target are presented to improve the dynamic performance of AWG. The proposed voltage control algorithm is composed of a single-loop output voltage control, an inverter current feedback term to improve transient response, and a load current feedforward term to prevent voltage distortion. The guideline for setting control gain is presented based on output filter parameters and digital time delay. The performance of the proposed algorithm is proven by experimental results through comparison with the conventional algorithm.

군집화 기법을 이용한 GIS 열화 패턴 연구 (A Study on Degradation Pattern of GIS Using Clustering Methode)

  • 이덕진
    • 한국전기전자재료학회논문지
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    • 제31권4호
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    • pp.255-260
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    • 2018
  • In recent years, increasing electricity use has led to considerable interest in green energy. In order to effectively supply, cut off, and operate an electric power system, many electric power facilities such as gas insulation switch (GIS), cable, and large substation facilities with higher densities are being developed to meet demand. However, because of the increased use of aging electric power facilities, safety problems are emerging. Electromagnetic wave and leakage current detection are mainly used as sensing methods to detect live-line partial discharges. Although electromagnetic sensors are excellent at providing an initial diagnosis and very reliable, it is difficult to precisely determine the fault point, while leakage current sensors require a connection to the ground line and are very vulnerable to line noise. The partial discharge characteristic in particular is accompanied by statistical irregularity, and it has been reported that proper statistical processing of data is very important. Therefore, in this paper, we present the results of analyzing ${\Phi}-q-n$ cluster distributions of partial discharge characteristics by using K-means clustering to develop an expert partial discharge diagnosis system generated in a GIS facility.