• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.1
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• pp.103-108
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• 2002

The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade In response to the constant demand for increased speed, decreased power, and increased packing density. The state -of-the-art simulation programs are developed by engineers and scientists. This paper has compared commercial programs of Micro-tec and ISE-TCAD in device simulation. This paper investigates LDD MOSFET using two simulators. Bias condition is applied to the devices with gate lengths(Lg) 180㎚. We have presented MOSFET's characteristics such as I-V characteristic and electric field, and compared Micro-tec with ISE TCAD.

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.621-622
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• 2012

The thermal over-current relay or electronic motor protection relay is mostly used as the open-phase detection device of the three-phase motor or load. When the over-current or overheat of electric line is generated, it detects and operates circuit breaker, but there is the defect that the sensing speed is slow, the operation can be sometimes failed, and the precision is decreased. In order to improve these problems, this paper is proposed a new control circuit topology for open-phase protection using semiconductor devices. Therefore, the proposed open-phase protection device enhances the sensing speed and precision, and has the advantage of simple fitting in the three-phase motor control panel in the field, as it manufactures into small size and light weight.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1247-1249
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• 1993

In this paper, NUDFET(NonUniformly Doped Field Effect Transistor) is presented as an alternative which offers the possibility of reducing the power necessary to operate switching circuits without a substantial loss in speed. The purpose of this NUDFET is to modify the electric field profile in order to cause carrier velocity saturation to occur at a lower voltage than it would occur in the uniformly doped device of the same channel length. The more MESFET and NUDFET circuits are realized, the more accurate model ins the performance of these devices become required. Analytic model ins was replaced by numerical analysis because of the complexity of device configuration. In this paper, FEM is selected because of simpler local mesh refinement and smaller computer memory than FDM. For accurate analysis, this paper has applied the Scharfetter-Gummel(S-G) Scheme and seven-point Gaussian Quadrature rule to assembly of the finite-element stiffness matrices and right-hand side vector of the semiconductor equations.

• Journal of the Korea Safety Management & Science
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• v.17 no.3
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• pp.355-362
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• 2015

There has been an increase of using Bosch Process to fabricate MEMS Device, TSV, Power chip for straight etching profile. Essentially, the interest of TSV technology is rapidly floated, accordingly the demand of Bosch Process is able to hold the prominent position for straight etching of Si or another wafers. Recently, the process to prevent under etching or over etching using EPD equipment is widely used for improvement of mechanical, electrical properties of devices. As an EPD device, the OES is widely used to find accurate end point of etching. However, it is difficult to maintain the light source from view port of chamber because of contamination caused by ion conflict and byproducts in the chamber. In this study, we adapted the SPOES to avoid lose of signal and detect less open ratio under 1 %. We use 12inch Si wafer and execute the through etching 500um of thickness. Furthermore, to get the clear EPD data, we developed an algorithm to only receive the etching part without deposition part. The results showed possible to find End Point of under 1 % of open ratio etching process.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.699-701
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• 2011

The Next-generation IT technology has been evolving from single technique to another which has merged, converging characteristics. The government categorized the 5 essential technologies to secure competitiveness in designing system semiconductors as smart motor vehicle info-tainment platform, smart TV multimedia system, smart phone analog interface technique, smart convergence digital communication and RF techniques, and advanced power management for smart devices. Also, it designated smart phone, smart TV, smart motor vehicle, and smart pad as the key industries. Such core techniques will become the key technologies of semiconductor design to secure the competitiveness of the next generation smart devices and the techniques can be transferred to fab-less design companies. In this contribution, we analyze the issues and the problems of the SoC design trends for smart motor vehicle info-tainment platforms.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.668-670
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• 2011

The Next-generation IT technology has been evolving from single technique to another which has merged, converging characteristics. The government categorized the 5 essential technologies to secure competitiveness in designing system semiconductors as smart motor vehicle info-tainment platform, smart TV multimedia system, smart phone analog interface technique, smart convergence digital communication and RF techniques, and advanced power management for smart devices. Also, it designated smart phone, smart TV, smart motor vehicle, and smart pad as the key industries. Such core techniques will become the key technologies of semiconductor design to secure the competitiveness of the next generation smart devices and the techniques can be transferred to fab-less design companies. In this contribution, we analyze the issues and the problems of the smart phone analog and interface techniques.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.278.1-278.1
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• 2014

Organic materials have been explored as the gate dielectric layers in thin film transistors (TFTs) of backplane devices for flexible display because of their inherent mechanical flexibility. However, those materials possess some disadvantages like low dielectric constant and thermal resistance, which might lead to high power consumption and instability. On the other hand, inorganic gate dielectrics show high dielectric constant despite their brittle property. In order to maintain advantages of both materials, it is essential to develop the alternative materials. In this work, we manufactured nanocomposite gate dielectrics composed of organic material and inorganic nanoparticle and integrated them into organic TFTs. For synthesis of nanocomposite gate dielectrics, polyimide (PI) was explored as the organic materials due to its superior thermal stability. Candidate nanoprticles (NPs) of halfnium oxide, titanium oxide and aluminium oxide were considered. In order to realize NP concentration dependent electrical characteristics, furthermore, we have synthesized the different types of nanocomposite gate dielectrics with varying ratio of each inorganic NPs. To analyze gate dielectric properties like the capacitance, metal-Insulator-metal (MIM) structures were prepared together with organic TFTs. The output and transfer characteristics of organic TFTs were monitored by using the semiconductor parameter analyzer (HP4145B), and capacitance and leakage current of MIM structures were measured by the LCR meter (B1500, Agilent). Effects of mechanical cyclic bending of 200,000 times and thermally heating at $400^{\circ}C$ for 1 hour were investigated to analyze mechanical and thermal stability of nanocomposite gate dielectrics. The results will be discussed in detail.

• Applied Chemistry for Engineering
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• v.18 no.5
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• pp.506-510
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• 2007

Vacuum deposited 4,4',4''-tris(N-(1-naphthyl)-N-phenylamino)-triphenylamine (1-TNATA), a widely-used semiconductor material, is placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in OLEDs and a well-stacked 1-TNATA layer leads to stable and high efficiency devices by reducing the carrier injection barrier at the interface between the ITO anode and hole transport layers. According to Raman spectra, thermal annealing after deposition as well as electromagnetic field treatment during deposition lead to closer stacking of 1-TNATA molecules and resulted in molecular ordering. By thermal annealing at about $110^{\circ}C$, an increase in current flow through the film by over 25% was observed. Molecularly-ordered 1-TNATA films played an important role in achieving higher luminance efficiency as well as higher power efficiency of the multi-layered organic EL devices in the present work. Electromagnetic field treatment during deposition was less effective compared to thermal annealing

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.138-143
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• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.

• Journal of Software Assessment and Valuation
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• v.15 no.1
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• pp.55-62
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• 2019

The needs for small size and low power consumption of information devices is being implemented with SOC technology that implements the program on a single chip in Internet of Thing. Copyright disputes due to piracy are increasing in semiconductor chips as well, arising from disputes in the chip implementation of the design house and chip implementation by the illegal use of the source code. However, since the final chip implementation is made in the design house, it is difficult to protect the copyright. In this paper, we deal with the analysis method for extracting similarity and the criteria for setting similarity judgment in the dispute of source code written in HDL language. Especially, the chip which is manufactured based on the same specification will be divided into the same configuration and the code type.