• Journal of Power Electronics
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• v.16 no.4
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• pp.1426-1437
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• 2016

In different industrial and mission oriented applications, redundant or standby semiconductor systems can be implemented to improve the reliability of power electronics equipment. The proper structure for implementation can be one of the redundant or standby structures for series or parallel switches. This selection is determined according to the type and failure rate of the fault. In this paper, the reliability and the mean time to failure (MTTF) for each of the series and parallel configurations in two redundant and standby structures of semiconductor switches have been studied based on different failure rates. The Markov model is used for reliability and MTTF equation acquisitions. According to the different values for the reliability of the series and parallel structures during SC and OC faults, a comprehensive comparison between each of the series and parallel structures for different failure rates will be made. According to the type of fault and the structure of the switches, the reliability of the switches in the redundant structure is higher than that in the other structures. Furthermore, the performance of the proposed series and parallel structures of switches during SC and OC faults, results in an improvement in the reliability of the boost dc/dc converter. These studies aid in choosing a configuration to improve the reliability of power electronics equipment depending on the specifications of the implemented devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.266-269
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• 2012

The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction capable devices and designed to the big switching power device. Use this number of the devices are need to high voltage and low on-state voltage drop. And then in this paper design of field stop IGBT is insert N buffer layer structure in NPT planar IGBT and optimization design of field stop IGBT and trench field stop IGBT, both devices have a comparative analysis and reflection of the electrical characteristics. As a simulation result, trench field stop IGBT is electrical characteristics better than field stop IGBT.

• Journal of Power Electronics
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• v.12 no.1
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• pp.19-23
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• 2012

This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC and GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.

• Journal of Power Electronics
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• v.15 no.6
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• pp.1489-1498
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• 2015

Gallium nitride (GaN)-based power switching devices, such as high-electron-mobility transistors (HEMT), provide significant performance improvements in terms of faster switching speed, zero reverse recovery, and lower on-state resistance compared with conventional silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET). These benefits of GaN HEMTs further lead to low loss, high switching frequency, and high power density converters. Through simulation and experimentation, this research thoroughly contributes to the understanding of performance characterization including the efficiency, loss distribution, and thermal behavior of a 160-W GaN-based synchronous boost converter under various output voltage, load current, and switching frequency operations, as compared with the state-of-the-art Si technology. Original suggestions on design considerations to optimize the GaN converter performance are also provided.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.57-60
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• 2015

Electric power in large devices is controlled by digital circuits, such as switching mode power supply. This kind of power circuits require accurate current sensor for power distribution. We studied characteristics of shunt resistor, which has many advantages for commercial application compared to Hall-effect current sensor. We applied ceramic package to the shunt resistor. Ceramic package has good thermal conductivity compared to plastic package, and this point is important for space requirement in Printed Circuit Board (PCB). Another advantage of the ceramic package is that surface mount technology (SMT) can be used for production. Our experimental results showed that the ceramic packaged resistor showed about 50% lower temperature than the plastic packaged one. Burning point and frequency characteristics are also discussed.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.5
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• pp.391-398
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• 2014

This paper presents a resonant step-down DC/DC converter to reduce the voltage stresses of a 3-phase inverter module under the three-phase AC utility line condition. Under this condition, a conventional 3-phase inverter module suffers from high voltage stresses as a result of the high rectified DC link voltage; hence, a high-cost high-voltage-rating inverter module must be used. However, using the proposed converter, a low-cost low-voltage-rating inverter module may be adopted to drive the motor even under the 3-phase AC line condition. The proposed converter, which can be realized with small size inductor and low-voltage-rating semiconductor devices, operates at a high-efficiency mode because of the zero-current switching operations of all the semiconductor devices. The operational principles are explained and a design example is provided in the study. Experimental results demonstrate the validity of the proposed converter.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1236-1239
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• 2009

Each LCD TFT panel requires a power supply IC on the panel board. The IC provides the power rails for the timing controller, source and gated driver IC and others. The industry trend moves towards higher integrated devices. The challenge for the panel manufacturer is the development and implementation of such an IC in cooperation with the semiconductor supplier. If not done carefully the solution will not reduce the overall solution cost or can't provide the expected performance and reliability. This paper discusses the key considerations to successfully develop and integrate a highly integrated LCD bias IC into the system.

• Electrical & Electronic Materials
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• v.15 no.9
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• pp.10-14
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• 2002

Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure flow rate input power density) and a various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimizations.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.193-197
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• 2001

This paper presents a novel circuit topology of the double two-switch forward type high frequency transformer linked soft-switching PWM DC-DC power converter with tapped inductor filters that can operate under a condition of the low peak voltage stress across the power semiconductor devices and lowered peak current stress through the transformer for some high power applications. This circuit topology of an interleaved two-switch forward soft-switching power converter is proposed in the order to minimize an idle circulating current due to the tapped inductor filter without of any additional active auxiliary resonant-assisted snubber circuits, such as active resonant DC link snubbers and AC link snubbers, active resonant commutation leg link snubbers. The unique advantages of this power converter are less power circuit components and power semiconductor devices, constant frequency PWM scheme, cost effective configuration and wider soft-switching PWM operation range under PWM power regulations load variations. The practical effectiveness of the proposed soft-switching converter circuit topology is tested by simulations and is proved by experimental results received from the 500W-100kHz breadboard setup.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.109-113
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• 2020

A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower R_DS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys' process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.