Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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Realistic Simulations on Reverse Junction Characteristics of SiC and GaN Power Semiconductor Devices

  • Wei, Guannan (Dept. of Electrical and Computer Engineering, National University of Singapore) ;
  • Liang, Yung C. (Dept. of Electrical and Computer Engineering, National University of Singapore) ;
  • Samudra, Ganesh S. (Dept. of Electrical and Computer Engineering, National University of Singapore)
  • Received : 2011.08.30
  • Accepted : 2011.10.03
  • Published : 2012.01.20
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Abstract

This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC and GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.

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References

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