Browse > Article
http://dx.doi.org/10.6113/JPE.2015.15.6.1489

Performance Evaluation of GaN-Based Synchronous Boost Converter under Various Output Voltage, Load Current, and Switching Frequency Operations  

Han, Di (Department of Electrical and Computer Engineering, University of Wisconsin-Madison)
Sarlioglu, Bulent (Department of Electrical and Computer Engineering, University of Wisconsin-Madison)
Publication Information
Journal of Power Electronics / v.15, no.6, 2015 , pp. 1489-1498 More about this Journal
Abstract
Gallium nitride (GaN)-based power switching devices, such as high-electron-mobility transistors (HEMT), provide significant performance improvements in terms of faster switching speed, zero reverse recovery, and lower on-state resistance compared with conventional silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET). These benefits of GaN HEMTs further lead to low loss, high switching frequency, and high power density converters. Through simulation and experimentation, this research thoroughly contributes to the understanding of performance characterization including the efficiency, loss distribution, and thermal behavior of a 160-W GaN-based synchronous boost converter under various output voltage, load current, and switching frequency operations, as compared with the state-of-the-art Si technology. Original suggestions on design considerations to optimize the GaN converter performance are also provided.
Keywords
Gallium nitride; Semiconductor loss; Synchronous boost converter;
Citations & Related Records
Times Cited By KSCI : 6  (Citation Analysis)
연도 인용수 순위
1 A. Lopez, D. Patino, and R. Diez, “Efficiency analysis of a ladder multilevel converter with the use of the equivalent continuous model,” Journal of Power Electron., Vol. 14, No. 6, pp. 1130-1138, Nov. 2014.   DOI
2 C. Gu, H. Krishnamoorthy, P. Enjeti, Z. Zheng, and Y. Li, “A medium-voltage matrix converter topology for wind power conversion with medium frequency transformers,” Journal of Power Electron., Vol. 14, No. 6, pp. 1166-1177, Nov. 2014.   DOI
3 D. Ryu, B. Choi, S. Lee, Y. Kim, and C. Won, “Flyback inverter using voltage sensorless MPPT for photovoltaic AC modules,” Journal of Power Electronics, Vol. 14, No. 6, pp. 1293-1302, Nov. 2014.   DOI
4 M. Hakim, L. Tan, A. Abuelgasim, C. de-Groot, W. Redman-White, S. Hall, and P. Ashburn, “Drive current improvement in vertical MOSFETS using hydrogen anneal,” in Proc. ICECE, pp. 217-220, Dec. 2012.
5 D. Han, J. Noppakunkajorn, and B. Sarlioglu, “Comprehensive efficiency, weight, and volume comparison of SiC and Si-based bidirectional DC-DC converters for hybrid electric vehicles,” IEEE Trans. Veh. Technol., Vol. 63, No. 7, pp. 3001-3010, Sep. 2014.   DOI
6 J. Millan, P. Godignon, X. Perpina, A. Perez-Tomas, and J. Rebollo, “A survey of wide bandgap power semiconductor devices,” IEEE Trans. Power Electron., Vol. 29, No. 5, p. 2155-2163, May 2014.   DOI
7 N. Kaminski, “State of the art and the future of wide band-gap devices,” in Proc. IEEE Power Electron. Appl., pp. 1-9, Sep. 2009.
8 U. K. Mishra, L. Shen, T. E. Kazior, and Y.-F. Wu, "GaN-based RF power devices and amplifiers," Proc. IEEE, Vol. 96, No. 2, pp. 287-305, Feb. 2008.
9 J. Lee, “Design and control methods of bidirectional DC-DC converter for the optimal DC-link voltage of PMSM drive,” J. Electr. Eng. Tech., Vol. 9, No. 6, pp. 1944-1953, Nov. 2014.   DOI
10 J. Shin, H. Shin, G. Seo, J. Ha, and B. Cho, “Low-common mode voltage H-bridge converter with additional switch legs,” IEEE Trans. Power Electron., Vol. 28, No. 4, pp. 1773,1782, Apr. 2013.   DOI
11 J. Biela, M. Schweizer, S. Waffler, and J. W. Kolar, “SiC vs. Si - evaluation of potentials for performance improvement of inverter and DC-DC converter systems by SiC power semiconductors,” IEEE Trans. Ind. Electron., Vol. 58, No. 7, pp. 2872-2882, Jul. 2011.   DOI
12 H. Yoo, S. Sul, Y. Park, and J. Jeong, “System integration and power-flow management for a series hybrid electric vehicle using supercapacitors and batteries,” IEEE Trans. Power Electron., Vol. 44, No. 1, pp. 108-114, Jan./Feb. 2008.
13 M. Rodriguez, Y. Zhang, and D. Maksimovic, “High-frequency PWM buck converters using GaN-on-SiC HEMTs,” IEEE Trans. Power Electron., Vol. 29, No. 5, pp. 2462-2473, May 2014.   DOI
14 Y. Wu, M. Jacob-Mitos, M. L. Moore, and S. Heikman, “A 97.8% efficient GaN HEMT boost converter with 300-W output power at 1 MHz,” IEEE Electron Device Lett., Vol. 29, No. 8, pp. 824-826, Aug. 2008.   DOI
15 B. Ozpineci and L. M. Tolbert, “Characterization of SiC Schottky diodes at different temperatures,” IEEE Power Electron. Lett., Vol. 1, No. 2, pp. 54-57, Jun. 2003.   DOI
16 A. Elasser and T. P. Chow, "Silicon carbide benefits and advantages for power electronics circuits and systems," Proc. IEEE, Vol. 90, No. 6, pp. 969- 986, Jun. 2002.
17 I. Kang, “Electrical characteristics of enhancement-mode n-channel vertical GaN MOSFETs and the effects of sidewall slope,” J. Electr. Eng. Tech., Vol. 10, No. 3, pp. 1131-1137, May 2015.   DOI
18 Y. Shin, “Effects of SPS mold on the properties of sintered and simulated SiC-ZrB2 composites,” J. Electr. Eng. Tech., Vol. 6, No. 4, pp. 1474-1480, Nov. 2013.
19 C. P. Henze, H. C. Martin, and D. W. Parsley, “Zero-voltage switching in high frequency power converters using pulse width modulation,” in Proc. Appl. Power Electron. Conf., pp. 33-40, 1988.
20 H. Liu, W. Hsu, C. Lee, B. Chou, Y. Liao, and M. Chiang, “Investigation of temperature-dependent characteristics of AlGaN/GaN MOS-HEMT by using hydrogen peroxide oxidation technique,” IEEE Trans. Electron Devices, Vol. 61, No. 8, pp. 2760-2766, Aug. 2014.   DOI
21 D. Han and B. Sarlioglu, “Dead-time effect on GaN-based synchronous boost converter and analytical model for optimal dead-time selection,” IEEE Trans. Power Electron., to be published.
22 J. Yang, “Efficiency improvement with GaN-based SSFET as synchronous rectifier in PFC boost converter,” in Proc. PCIM Europe, pp. 1-6, May 2014.
23 T. LaBella and J.-S. J. Lai, “A hybrid resonant converter utilizing a bidirectional GaN AC switch for high-efficiency PV applications,” IEEE Trans. Ind. Appl., Vol. 50, No. 5, pp. 3468-3475, Sep./Oct. 2014.   DOI
24 Y. Wu, J. Gritters, L. Shen, R. P. Smith, and B. Swenson, “kV-class GaN-on-Si HEMTs enabling 99% efficiency converter at 800 V and 100 kHz,” IEEE Trans. Power Electron., Vol. 29, No. 6, pp. 2634-2637, Jun. 2014.   DOI