A Study About Design and Characteristic Improvement According to P-base Concentration Charge of 500 V Planar Power MOSFET (500 V 급 Planar Power MOSFET의 P 베이스 농도 변화에 따른 설계 및 특성 향상에 관한 연구)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.26 no.4
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- pp.284-288
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- 2013