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http://dx.doi.org/10.4313/JKEM.2015.28.8.486

The Optimal Design of High Voltage Field Stop IGBT  

Ahn, Byoung-Sup (Department of Information & Telecommunication, Far East University)
Zhang, Lanxiang (Department of Energy Semiconductor Engineering, Far East University)
Liu, Yong (Department of Energy Semiconductor Engineering, Far East University)
Kang, Ey Goo (Department of Energy Semiconductor Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.28, no.8, 2015 , pp. 486-489 More about this Journal
Abstract
Power semiconductor device has a very long history among semiconductor, since the invention of low-pressure bipolar transistor 1947, and so far from small capacity to withstand voltage-current, high-speed and high-frequency characteristics have been developed with high function. In this study, the PWM IC Switch to the main parts used in IGBT (insulated gate bipolar transistor) for the low power loss and high drive capability of the simulator to Synopsys' T-CAD used by the 1,700 V NPT Planar IGBT, 1,700 V FS was a study of the Planar IGBT, the results confirmed that IGBT 1,700 V FS Planar is making about 11 percent less than the first designed NPT Planar IGBT.
Keywords
Power device; IGBT; Power switching; Breakdown voltage; Field stop;
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