• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.4
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• pp.257-265
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• 2009

Recent progress in development of CMOS power amplifiers for mobile terminals is reviewed, focusing first on switching mode power amplifiers, which are used for transmitters with constant envelope modulation and polar transmitters. Then, various transmission line transformers are evaluated. Finally, linear power amplifiers, and linearization techniques, are discussed. Although CMOS devices are less linear than other devices, additional functions can be easily integrated with CMOS power amplifiersin the same IC. Therefore, CMOS power amplifiers are expected to have potential applications after various linearity and efficiency enhancement techniques are used.

• Electronics and Telecommunications Trends
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• v.34 no.5
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• pp.71-80
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• 2019

Gallium nitride (GaN) can be used in high-voltage, high-power-density/-power, and high-speed devices owing to its characteristics of wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. In this study, we investigate the technology trends for X-/Ku-band GaN RF power devices and MMIC power amplifiers, focusing on gate-length scaling, channel structure, and power density for GaN RF power devices and output power level and output power density for GaN MMIC power amplifiers. Additionally, we review the technology trends in gallium arsenide (GaAs) RF power devices and MMIC power amplifiers and analyze the technology trends in RF power devices and MMIC power amplifiers based on both GaAs and GaN. Furthermore, we discuss the current direction of national research by examining the national and international technology trends with respect to X-/Ku-band power devices and MMIC power amplifiers.

• Journal of Korea Multimedia Society
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• v.21 no.9
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• pp.1068-1075
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• 2018

We propose a method for driving loudspeakers from class D audio power amplifiers in current mode, instead of in conventional voltage mode, which was impossible with the feedback circuitry. Unlike analog audio amplifiers, Class D audio power amplifiers have signal delay between the input and output signals, which makes it difficult to apply the feedback circuitry for current-mode driving. The idea of the pre-distortion scheme used for the compensation of the non-linearity of RF power amplifiers is adapted to remedy the impedance variation effect of the loudspeakers for current driving. The method uses the speaker model for the pre-distorter to compensate for the speaker impedance variation with frequency. The simulation and test results confirms the validity of the proposed method.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.4
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• pp.249-256
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• 2009

As a wireless handset deals with multiple application standards concurrently, RF transmitters and power amplifiers are required to be more power efficient and reconfigurable. In this paper, we review the recent advances in the design of the power amplifiers and transmitters. Then, the systematic design approaches to improve the performance with the digital baseband signal processing are introduced for the next generation mobile handset.

• Journal of electromagnetic engineering and science
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• v.1 no.2
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• pp.146-155
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• 2001

This paper describes the improvement in performance of power amplifiers by Defected Ground Structure (DGS) for several operating classes. Due to its excellent capability of harmonic rejection, DGS plays a threat role in improving the main performance of power amplifiers such as output power, power added efficiency, harmonic rejection, and intermodulation distortion (IMD3). In order to verify the improvement in performance of power amplifiers by DGS, measured data for a 30 Watts power amplifier with and without DGS attached under several operating classes are illustrated and compared. The principle of the performance improvement is described with simple Volterra nonlinear transfer functions. Also, the measured performance far two cases, i.e. with and without DGS, and the quantities of improvement fur the various operating classes are compared and discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.175-181
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• 2006

Wide band-gap semiconductor electron devices have made great progresses to produce very high power amplifiers for various wireless standards. The advantages of wide band-gap electronic devices and their progresses are summarized in this paper.

• Journal of electromagnetic engineering and science
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• v.2 no.1
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• pp.5-10
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• 2002

We have analized the inverse class-F and class-F amplifiers using their waveforms. From the analytic equations derived from the analysis, we have calculated tole efficiencies, output powers, DC power dissipations, and optimum fundamental load impedances of the inverse class-F and class-F amplifiers. We also have compared them for various operation conditions, which include the same peak current, saute DC power dissipation, same fundamental RF output power, and same fundamental load impedance with different Ron(on-resistance). These analyses have clearly shown the performance limitations, advantages, and guide to the optimized design of the inverse class-F amplifiers.

• Journal of Power Electronics
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• v.6 no.1
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• pp.83-93
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• 2006

A new high efficiency and low profile on-board DC/DC converter for digital car audio amplifiers is proposed. The proposed converter shows low conduction loss due to the low voltage stress of the secondary diodes, a lack of DC magnetizing current for the transformer, and a lack of stored energy in the transformer. Moreover, since the primary MOSFETs are turned-on under zero-voltage-switching (ZVS) conditions and the secondary diodes are turned-off under zero-current-switching (ZCS) conditions, the proposed converter has minimized switching losses. In addition, the input filter can be minimized due to a continuous input current, and an output inductor is absent in the proposed converter. Therefore, the proposed converter has the desired features, high efficiency and low profile, for a viable power supply for digital car audio amplifiers. A 60W industrial sample of the proposed converter has been implemented for digital car audio amplifiers with a measured efficiency of $88.3\%$ at nominal input voltage.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.5
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• pp.920-927
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• 1994

A development of an efficient 14.0~14.5GHz 3 Watt SSPA is described in this paper, which is applicable to the very small aperture terminal(VSAT) for bidirectional data and voice signal transmission in low cost and with small size. The SSPA consists of two stages of low noise amplifiers using the low noise GaAs FETs. two stages of medium power amplifiers using the medium power GaAs FETs, and three stages of power amplifiers including a balanced amplifier using an internally matched power GaAs FET. The achieved with this seven stage amplifiers are 42dB signal power gain, 7dB noise figure, 35dBm output power at 1dB gain compression point and 2.0 and 1.5 input and output VSWR respectively.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.695-698
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• 2003

This paper presents a Si power LDMOSFET for power amplifiers in the 1.8-2.2GHz frequency range for the base station of personal communication systems. To improve the cut-off frequency, the proposed Si power LDMOSFET has small gate to drain capacitance by shielding the electric fields with extended source electrode and forming the field oxide structure in drain region. The proposed Si power LDMOSFET can be used for a power amplifier and it has 32% of power added efficiency and 39.5dBm of output power when the supply voltage is 28V and the operating frequency is 1.9GHz.