Browse > Article

Wide Band-gap FETs for High Power Amplifiers  

Burm, Jin-Wook (Dept. of Electronic Engineering, Sogang University)
Kim, Jae-Kwon (Dept. of Electronic Engineering, Sogang University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.6, no.3, 2006 , pp. 175-181 More about this Journal
Abstract
Wide band-gap semiconductor electron devices have made great progresses to produce very high power amplifiers for various wireless standards. The advantages of wide band-gap electronic devices and their progresses are summarized in this paper.
Keywords
GaN; wide band-gap materials; FET; power amplifier;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Y. Okamoto, A. Wakejima, Y. Ando, T. Nakayama, K. Matsunaga and H. Miyamoto, '100W C-band single-chip GaN FET power amplifier,' Electronics Letters, vol. 42 no. 5, pp. 283 - 285, 2006   DOI   ScienceOn
2 G. Meneghesso, Giovanni Verzellesi, Roberto Pierobon, Fabiana Rampazzo, Alessandro Chini, Umesh K. Mishra, Claudio Canali, Associate , and E. Zanoni, 'Surface-Related Drain Current Dispersion Effects in AlGaN？GaN HEMTs,' IEEE Trans. on Electron Devices, vol. 51, no. 10, pp. 1554-1561, 2004   DOI   ScienceOn
3 M. Micovic, N. X. Nguyen, P. Janke, W.-S. Wong, P. Hashimoto, L. M. McCray, and C. Nguyen, 'GaN/AlGaN high electron mobility transistor with f of 110 GHz,' Electron. Lett., vol. 36, no. 4, pp. 358？359, 2000   DOI   ScienceOn
4 T. Inoue, Y. Ando, K. Kasahara, Y. Okamoto, T. Nakayama, H. Miyamoto, and M. Kuzuhara, 'Advanced RF characterization and delay-time analysis of short channel AlGaN/GaN heterojunc tion FETs,' IEICE Trans. Electron., vol. E86-C, no. 10, pp. 2065？2070, 2003
5 N.-Q. Zhang, S. Keller, G. Parish, S. Heikman, S. P. DenBaars, and U. K. Mishra, 'High Breakdown GaN HEMT with Overlapping Gate Structure', IEEE Electron Device Letters, vol. 21, no. 9, pp. 421-423, 2000   DOI   ScienceOn
6 A. Wakejima, K. Matsunaga, Y. Okamoto, Y. Ando, T. Nakayama and H. Miyamoto, '370W output power GaN-FET amplifier for W-CDMA cellular base stations,' Electronics letters, vol. 41, no. 25, pp. 1371-1372, 2005   DOI   ScienceOn
7 M.A. Khan, Q. Chen, M.S. Shur, B.T. Dermott, J.A.Higgins, J. Burm, W. Schaff and L.F. Eastman, 'Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1GHz cutoff frequency,' Electron. Lett., vol. 32, no. 4, pp. 357-358, 1996   DOI   ScienceOn
8 Y.S. Park, 'Current Status of Group III-Nitride Semiconductors and Future Prospects,' J. Korean Physical Society, vol. 34, pp. S199-S219, 1998
9 H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, 'Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer,' Appl. Phys. Lett., vol. 48, no. 3, pp.353-355, 1986   DOI   ScienceOn
10 H. Morkoc, R. Cingolani, B. Gil, 'Polarization effects in nitride semiconductors and device structures', Mat. Res. Innovat. 3, pp.97-106, Springer-Verlag, 1999   DOI
11 Y.-F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, '30-W/mm GaN HEMTs by Field Plate Optimization,' IEEE Electron Device Lett., vol. 25, no. 3, pp. 117-119, 2004   DOI   ScienceOn
12 S. N. Mohammad, A. A. Salvador, and H. Morkoc, Proceedings of The IEEE (USA) vol. 83, p.1326, 1995   DOI   ScienceOn
13 J. Burm and L. F. Eastman, Chapter 4.3, 'AlGaN/GaN HFETs/HEMTs', EMIS Datareview Series, IEE, No. 23, 1999
14 S. Gao, C. Sanabria, H. Xu, S.I. Long, S. Heikman, U. Mishra and R.A. York, 'MMIC class-F power amplifiers using field-plated GaN HEMTs,' IEE Proc.-Microw. Antennas Propag., vol. 153, no. 3, pp. 259-262, 2006   DOI   ScienceOn
15 Z. Yang, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, and M. A. Khan, 'High-Power Operation of III-N MOSHFET RF Switches,' IEEE Microwave and Wireless Components Letters, vol. 15, no. 12, pp. 850-852, 2005   DOI   ScienceOn
16 A. Chini, J. Wittich, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, 'Power and Linearity Characteristics of GaN MISFETs on Sapphire Substrate,' IEEE Electron Device Letters, vol. 25, no. 2, pp. 55-57, 2004   DOI   ScienceOn
17 Hongtao Xu, Steven Gao, Sten Heikman, Stephen I. Long, Umesh K. Mishra, and Robert A. York, 'A High-Efficiency Class-E GaN HEMT Power Amplifier at 1.9 GHz,' IEEE Microwave and Wireless Components Letters, vol. 16, no. 1, pp. 22-24, 2006   DOI   ScienceOn
18 Takashi Inoue, Yuji Ando, Hironobu Miyamoto, Tatsuo Nakayama, Yasuhiro Okamoto, Kohji Hataya, and Masaaki Kuzuhara, '30-GHz-Band Over 5-W Power Performance of Short-Channel AlGaN/GaN Heterojunction FETs,' IEEE Trans. ON Microwave Theory and Techniques, vol. 53, no. 1, pp. 74-80, 2005   DOI   ScienceOn
19 Steven Gao, Hongtao Xu, Sten Heikman, Umesh K. Mishra, and Robert A. York, 'Two-Stage Quasi-Class-E Power Amplifier in GaN HEMT Technology,' IEEE Microwave and Wireless Components Letters, vol. 16, no. 1, pp. 28-30, 2006   DOI   ScienceOn
20 F. van Raay, R. Quay, R. Kiefer, F. Benkhelifa, B. Raynor, W. Pletschen, M. Kuri, H. Massler, S. Muller, M. Dammann, M. Mikulla, M. Schlechtweg, and G. Weimann, 'A Coplanar X-Band AlGaN/GaN Power Amplifier MMIC on s.i. SiC Substrate,' IEEE Microwave and Wireless Component Letters, vol. 15, no. 7, pp. 460-462, 2005   DOI   ScienceOn
21 A. Wakejima, K. Matsunaga, Y. Okamoto, Y. Ando, T. Nakayama, K. Kasahara and H. Miyamoto, '280W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations', Electronics Letters, vol. 14, no. 18, pp. 1004 ？ 1005, 2005   DOI   ScienceOn