• Title/Summary/Keyword: Post-oxidation

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Atomic layer chemical vapor deposition of Zr $O_2$-based dielectric films: Nanostructure and nanochemistry

  • Dey, S.K.
    • Electrical & Electronic Materials
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    • v.16 no.9
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    • pp.64.2-65
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    • 2003
  • A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{+}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{+}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

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VARIATION OF NEUTRON MODERATING POWER ON HDPE BY GAMMA RADIATION

  • Park, Kwang-June;Ju, June-Sik;Kang, Hee-Young;Shin, Hee-Sung;Kim, Ho-Dong
    • Journal of Radiation Protection and Research
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    • v.34 no.1
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    • pp.9-14
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    • 2009
  • High density polyethylene (HDPE) is degraded due to a radiation-induced oxidation when it is used as a neutron moderator in a neutron counter for a nuclear material accounting of spent fuels. The HDPE exposed to the gamma-ray emitted from the fission products in a spent nuclear fuel results in a radiation-induced degradation which changes its original molecular structure to others. So a neutron moderating power variation of HDPE, irradiated by a gamma radiation, was investigated in this work. Five HDPE moderator structures were exposed to the gamma radiation emitted from a $^{60}Co$ source to a level of $10^5-10^9$ rad to compare their post-irradiation properties. As a result of the neutron measurement test with 5 irradiated HDPE structures and a neutron measuring system, it was confirmed that the neutron moderating power for the $10^5$ rad irradiated HDPE moderator revealed the largest decrease when the un-irradiated pure one was used as a reference. It implies that a neutron moderating power variation of HDPE is not directly proportional to the integrated gamma dose rate. To clarify the cause of these changes, some techniques such as a FTIR, an element analysis and a densitometry were employed. As a result of these analyses, it was confirmed that the molecular structure of the gamma irradiated HDPEs had partially changed to others, and the contents of hydrogen and oxygen had varied during the process of a radiation-induced degradation. The mechanism of these changes cannot be explained in detail at present, and thus need further study.

Hydrogeology and Water Chemistry of the Friar Tuck Abandoned Coal Mine Site, Indiana, USA (미국 인디아나주 Friar Tuck 폐탄광의 수리지질 및 수질)

  • Park, Jung-Chan
    • Journal of the Korean Society of Groundwater Environment
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    • v.3 no.2
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    • pp.70-79
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    • 1996
  • The Friar Tuck Abandoned Coal Mine site is one of the most complexly disturbed areas in the midwestern United States. The deposits of gob and tailings contain high concentrations of pyrite, whose oxidation contributes to the acidification of soil and water and prevents the growth of vegetation. In an effort to quantitatively evaluate the effects of reclamation techniques, detailed monitoring program was performed. Water samples were collected from surface water, groundwater, and pore water from the unsaturated zone during a period of five years. According to the results, The spoil deposits are a relatively minor source of contamination and gob piles are the source of severe contamination to surface water and groundwater. But, loess and till beneath the gob piles effectively prevent the contaminated water migration from the source. Surface layers of the gob piles and the tailing deposits are less toxic than the interior of the deposits as a consequence of weathering over several decades. Acid mine drainage is in a post-peak stage and acid formation potential is probably situated in the unsaturated zone of refuse.

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Determination of trace bromate in various water samples by direct-injection ion chromatography and UV/Visible detection using post-column reaction with triiodide

  • Kim, Jungrae;Sul, Hyewon;Song, Jung-Min;Kim, Geon-Yoon;Kang, Chang-Hee
    • Analytical Science and Technology
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    • v.33 no.1
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    • pp.42-48
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    • 2020
  • Bromate is a disinfection by-product generated mainly from the oxidation of bromide during the ozonation and disinfection process in order to remove pathogenic microorganism of drinking water, and classified as a possible human carcinogen by International Agency for Research of Cancer (IARC) and World Health Organization (WHO). For the purpose of determining the trace level concentration of bromate, several sensitive techniques are applied mostly based on suppressed conductivity detection and UV/Visible detection after postcolumn reaction (PCR). In this study, the suppressed conductivity detection method and the PCR-UV/Visible detection method through the triiodide reaction were compared to analyze the trace bromate in water samples and estimated for the availability of these analytical methods. In addtion, the state-of-the-art techniques was applied for the determination of trace level bromate in various water matrices, i.e., soft drinking water, hard drinking water, mineral water, swimming pool water, and raw water. In comparison of two analytical methods, it was found that the conductivity detection had the suitable advantage to simultaneously analyze bromate and inorganic anions, however, the bromate might not be precisely quantified due to the matrix effect especially by chloride ion. On the other hand, the trace bromate was analyzed effectively by the method of PCR-UV/Visible detection through triiodide reaction to satisfactorily minimize the matrix interference of chloride ion in various water samples, showing the good linearity and reproducibility. Furthermore, the method detection limit (MDL) and recovery were 0.161 ㎍/L and 101.0-108.1 %, respectively, with a better availability compared to conductivity detection.

Investigation of $WSi_2$ Gate for the Integration With $HfO_3$gate oxide for MOS Devices (MOS 소자를 위한 $HfO_3$게이트 절연체와 $WSi_2$게이트의 집적화 연구)

  • 노관종;양성우;강혁수;노용한
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.832-835
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    • 2001
  • We report the structural and electrical properties of hafnium oxide (HfO$_2$) films with tungsten silicide (WSi$_2$) metal gate. In this study, HfO$_2$thin films were fabricated by oxidation of sputtered Hf metal films on Si, and WSi$_2$was deposited directly on HfO$_2$by LPCVD. The hysteresis windows in C-V curves of the WSi$_2$HfO$_2$/Si MOS capacitors were negligible (<20 mV), and had no dependence on frequency from 10 kHz to 1 MHz and bias ramp rate from 10 mV to 1 V. In addition, leakage current was very low in the range of 10$^{-9}$ ~10$^{-10}$ A to ~ 1 V, which was due to the formation of interfacial hafnium silicate layer between HfO$_2$and Si. After PMA (post metallization annealing) of the WSi$_2$/HfO$_2$/Si MOS capacitors at 500 $^{\circ}C$ EOT (equivalent oxide thickness) was reduced from 26 to 22 $\AA$ and the leakage current was reduced by approximately one order as compared to that measured before annealing. These results indicate that the effect of fluorine diffusion is negligible and annealing minimizes the etching damage.

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Fabrication of the Micromachined Transformer using High Permeability NiFe Core (투자율이 높은 NiFe 코어를 이용한 마이크로 트랜스포머 제작)

  • Cho, Se-Jun;Cha, Doo-Yeol;Lee, Jai-Hyuk;Lee, Soo-Jin;Chang, Sung-Pil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.3
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    • pp.194-198
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    • 2010
  • Recently as the electronic devices are getting to be more and more smaller, transformers are needed to be micro fabricated using MEMS technology. In this paper transformers have been fabricated and measured by depositing insulation layer to reduce the loss of eddy current and in the middle core a high permeability permalloy was designed based on the turns ratio between primary coil and secondary coil which are 1:1 transformers. (the number of turns of primary coil and secondary coil: 3/3, 5/5, 7/7). The size of the transformers including ground shield are $1mm{\times}1.5mm$, $1mm{\times}1.95mm$, $1mm{\times}2.35mm$ respectively. The line width, pitch and the height of post are 50um. Based on the measured data from the micro fabricated transformers, the 3/3 turns in the primary coil and secondary coil showed the lowest insertion loss with 1.5 dB at 480 MHz and the 7/7 turns in the primary coil and secondary coil showed the highest insertion loss with 2.5 dB at 280 MHz. Also confirmed that the bandwidth goes up as the number of turns goes down. There was some difference between the actual measured data and the HFSS simulation result. It looks as if it is an error of the difference between oxidation of copper or the permeability of SU-8.

Removal of PAHs and PCBs in artificially contaminated soils using electron beam irradiation (전자빔 조사에 의한 오염토양중의 PAHs및 PCBs의 분해)

  • 김석구;정장식;김이태;배우근
    • Journal of Soil and Groundwater Environment
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    • v.7 no.3
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    • pp.61-70
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    • 2002
  • Direct electron beam irradiation experiments on artificially contaminated soil by polynuclear aromatic hydrocarbons (PAHs) and polychlorinated biphenyls (PCBs) were performed to evaluate applicability of direct electron beam irradiation process for contaminated soil remediation. The removal efficiency of PAHs was about 97 % at 600 kGy and PCBs about 70 % at 800 kGy. PAHs were removed 27 % more, compared to PCBs although the absorbed dose was as low as 200 kGy. The contaminants decomposition was due predominantly to direct interaction of high-energy electrons and the target compounds rather than due to oxidation/reduction reaction by reactive intermediates. Radiolysis of electron beam may be able to decontaminate contaminated soil by toxic and recalcitrant organic compounds like as PAHs and PCBs effectively, but it may be economically uncompetitive. Thus, developments of post-treatment process of conventional site remediation technologies may be more practical and economical than direct radiolysis.

Novel Ni-Silicide Structure Utilizing Cobalt Interlayer and TiN Capping Layer and its Application to Nano-CMOS (Cobalt Interlayer 와 TiN capping를 갖는 새로운 구조의 Ni-Silicide 및 Nano CMOS에의 응용)

  • 오순영;윤장근;박영호;황빈봉;지희환;왕진석;이희덕
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.12
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    • pp.1-9
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    • 2003
  • In this paper, a novel Ni silicide technology with Cobalt interlayer and Titanium Nitride(TiN) capping layer for sub 100 nm CMOS technologies is presented, and the device parameters are characterized. The thermal stability of hi silicide is improved a lot by applying co-interlayer at Ni/Si interface. TiN capping layer is also applied to prevent the abnormal oxidation of NiSi and to provide a smooth silicidc interface. The proposed NiSi structure showed almost same electrical properties such as little variation of sheet resistance, leakage current and drive current even after the post silicidation furnace annealing at $700^{\circ}C$ for 30 min. Therefore, it is confirmed that high thermal robust Ni silicide for the nano CMOS device is achieved by newly proposed Co/Ni/TiN structure.

The Impact of Ripening Time on Technological Quality Traits, Chemical Change and Sensory Characteristics of Dry-cured Loin

  • Seong, Pil Nam;Park, Kyoung Mi;Kang, Geun Ho;Cho, Soo Hyun;Park, Beom Young;Ba, Hoa Van
    • Asian-Australasian Journal of Animal Sciences
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    • v.28 no.5
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    • pp.677-685
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    • 2015
  • The effect of ripening time on the technological quality traits, fatty acid compositions and sensory characteristics of dry-cured loin was studied. Pork loins (n = 102) at 24 h post-mortem were used to produce dry-cured loins. The dry-cured loins were assessed at 30, 60, and 90 days of ripening for the aforementioned characteristics. Our results showed that the water activity ($a_w$) decreased (p<0.05) up to 60 days and did not change thereafter. The lipid oxidation and weight loss levels significantly (p<0.05) increased with increased ripening time. The Commission Internationale de l'Eclairage (CIE) $L^*$ decreased for 90 days while CIE $a^*$ increased for 60 days and did not increase thereafter. More noticeably, the levels of most of unsaturated fatty acids and total polyunsaturated fatty acids significantly decreased as increasing ripening time up to 90 days. The 30 days-ripened loins had lower (p<0.05) color, flavor and overall acceptability scores than the loins ripened for 60 and 90 days, however, no differences in sensory traits occurred between the 60 and 90 day-ripened samples. Based on the results obtained in the present study, it is suggested that the ripening duration between 30 and 60 days could be more appropriate for producing dry-cured loin product with higher quality and economic benefits.

Electronic Structure of Ce-doped ZrO2 Film: Study of DFT Calculation and Photoelectron Spectroscopy

  • Jeong, Kwang Sik;Song, Jinho;Lim, Donghyuck;Kim, Hyungsub;Cho, Mann-Ho
    • Applied Science and Convergence Technology
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    • v.25 no.1
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    • pp.19-24
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    • 2016
  • In this study, we evaluated the change of electronic structure during redox process in cerium-doped $ZrO_2$ grown by sol gel method. By sol-gel method, we could obtain cerium-doped $ZrO_2$ in high oxygen partial pressure and low temperature. After post annealing process in nitrogen ambient, the film is deoxidized. We used spectroscopic and theoretical methods to analysis change of electronic structure. X-ray absorption spectroscopy (XAS) for O K1-edge and Density Functional Theory (DFT) calculation using VASP code were performed to verify the electronic structure of the film. Also, high resolution x-ray photoelectron spectroscopy (HRXPS) for Ce 3d was carried out to confirm chemical bond of cerium doped $ZrO_2$. Through the investigation of the electronic structure, we verified as followings. (1) During reduction process, binding energy of oxygen is increase. Simultaneously, oxidation state of cerium was change to 4+ to 3+. (2) Cerium 4+ and cerium 3+ states were generated at different energy level. (3) Absorption states in O K edge were mainly originated by Ce 4+ $f_0$ and Ce 3+, while occupied states in valance band were mainly originated from Ce 4+ $f_2$.