• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.62-63
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• 2006

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of $30cm2/V{\cdot}s$, on/off ratio of 105 and threshold voltage of 5 V.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.322-325
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• 2000

N-channel poly-Si TFT, Processed by Solid Phase Crystalline(SPC) on a glass substrate, has been investigated by measuring its electrical properties before and after electrical stressing. It is observed that the threshold voltage shift due to electrical stress varies with various stress conditions. Threshold voltages measured in 1.5$\mu\textrm{m}$ and 3$\mu\textrm{m}$ poly-Si TFTs are 3.3V, 3.V respectively. With the threshold voltage shia the degradation of transconductance(G$\_$m/) and subthreshold swing(S) is also observed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.5
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• pp.38-42
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• 1982

N+-P/P+solar cells were fabricated by using the polycrystalline silline wafer with the resistivity of 3-6 ohm-cm. minority carrier lifetimes, measured by Nd: YAG laser, were from 100ns up to 150ns. Conversion efficiency measured under AM 1 irradiation, were about 4%.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.715-717
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• 2006

$NiCl_2$ vapor was introduced into conventional furnace to conduct vapor-induced crystallization (VIC) process. We made the metal chloride atmosphere by sublimating the $NiCl_2$ compound. The $NiCl_2$ atmosphere enhanced the crystallization of amorphous silicon thin films. As the result, polycrystalline Si film with large grain size and low metal contamination has been obtained.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.749-751
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• 2007

A buffer layer consisting of $SiO_x/Ta/Ti$ has been developed in order to overcome the adhesion and stress problems between poly-Si film and mica. Polycrystalline silicon thin film transistor was successfully fabricated on the mica and transferred to a flexible plastic substrate.

• Biotechnology and Bioprocess Engineering:BBE
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• v.8 no.4
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• pp.252-256
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• 2003

In this paper we describe the status of a silicon-based microelectrode for neural recording and an advanced neural interface. We have developed a silicon neural probe, using a combination of plasma and wet etching techniques. This process enables the probe thickness to be controlled precisely. To enhance the CMOS compatibility in the fabrication process, we investigated the feasibility of the site material of the doped polycrystalline silicon with small grains of around 50 nm in size. This silicon electrode demonstrated a favorable performance with respect to impedance spectra, surface topography and acute neural recording. These results showed that the silicon neural probe can be used as an advanced microelectrode for neurological applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.33-33
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.65-65
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.145-146
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• 1993

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.112-112
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• 1996