• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.321-326
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• 2005

Chemical mechanical polishing(CMP) process is essential technology to be applied to manufacturing the dielectric layer and metal line in semiconductor devices. It has been known that overpolishing in CMP depends on pattern selectivity as a function of density and pitch, and use of fixed abrasive pad(FAP) is one method which can improve the pattern selectivity. Thus, dishing & erosion defects can be reduced. This paper introduces the manufacturing technique of FAP using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. When applied to tungsten blanket wafers, the FAP resulted in appropriate performance in point of uniformity, material selectivity and roughness. Especially, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with the proposed FAP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1308-1311
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• 2004

It is very important that get polishing characteristic that to be stable that accomplish planarization of high efficiency in chemical mechanical polishing, and there is repeatability Groove of pad causes much effects in flow of slurry among various factors that influence in polishing characteristic, is expected to cause change of lubrication state and polishing characteristic in contact between wafer and pad. Therefore, divided factors of pad groove by groove pattern, groove profile, groove dimensions. This research wishes to study effect that dimension of pad groove gets in polishing performance. When changed dimension (width, depth, pitch of groove) of groove, measured change of removal rate and friction force. According as groove dimension changes, could confirm that removal rate and friction force change. While result of this experiment studies effect of pad groove in CMP, it is expected to become small help.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.3
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• pp.116-121
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• 2006

Most high-k materials are well known not to be etched easily, Some problems such as low etch rate poor sidewall angle, plasma damage, and process complexity were emerged from the high-density DRAM fabrication. Chemical mechanical polishing (CMP) by a damascene process was proposed to pattern this high-k material was polished with some commercial silica slurry as a function of pH variation. Sufficient removal rate with adequate selectivity to realize the pattern mask of tera-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible. The planarization was also achieved for the subsequent multi-level processes. Our new CMP approach will provide a guideline for effective patterning of high-k material by CMP technique.

• Laser Solutions
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• v.18 no.3
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• pp.6-8
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• 2015

Finishing process includes deburring, polishing and edge radiusing. It improves the surface profile of specimen and eliminates the alien substance on surface. Deburring is the elimination process for debris of edges. Polishing lubricates surfaces by rubbing or chemical treatment. There are two types for electron finishing. The one is using pulse beam. The other is using the convergent and scanning electron beam. Pulse type device appropriates the large area process. But it does not control the beam dosage. Scanning type device has advantages for dosage control and edge deburring. We design the convergence and scan type. It has magnetic lenses for convergence and scan device for scanning beam. Magnetic lenses consist of convergent and objective lens. The lenses are designed by the specification(beam size and working distance). In this paper, we evaluate the convergence performance by pattern process. Also, we analysis the results and important factors for process. The important factors for process are beam size, pressure, stage speed and vacuum. These results will be utilized into systematizing pattern shape and the factors.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.5
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• pp.262-267
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• 2002

In this paper, we first studied the factors affecting the motor current (MC) signal, which was strongly affected by the systematic hardware noises depending on polishing such as pad conditioning and arm oscillation of platen and recipe, head motor. Next, we studied the end point detection (EPD) for the chemical mechanical polishing (CMP) process of shallow trench isolation (STI) with reverse moat structure. The MC signal showed a high amplitude peak in the fore part caused by the reverse meal. pattern. We also found that the EP could not be detected properly and reproducibly due to the pad conditioning effect, especially when conventional low selectivity slurry was used. Even when there was no pad conditioning effect, the EPD method could not be applied, since the measured end points were always the same due to the characteristics of the reverse moat structure with an open nitride layer.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.101-102
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• 2006

PZT thin films, which are the representative ferroelectric materials in ferroelectric random access memory (FRAM), have some serious problem such as the imprint, retention and fatigue which ferroelectric properties are degraded by repetitive polarization. BL T thin film capacitors were fabricated by plasma etching, however, the plasma etching of BLT thin film was known to be very difficult. In our previous study, the ferroelectric materials such as PZT and BLT were patterned by chemical mechanical polishing (CMP) using damascene process to top electrode/ferroelectric material/bottom electrode. It is also possible to pattern the BLT thin film capacitors by CMP, however, the CMP damage was not considered in the experiments. The properties of BLT thin films were changed by the change of polishing pressure although the removal rate was directly proportional to the polishing pressure in CMP process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1084-1090
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• 1998

As device sizes are scaled down to submicron dimensions, planarization technology becomes increasingly important for both device fabrication and formation of multilevel interconnects. Chemical mechanical polishing (CMP) has emerged recently as a new processing technique for achieving a high degree of planarization for submicron VLSI applications. The polishing process has many variables, and most of which are not well understood. The factors determine the planarization performance are slurry and pad type, insert material, conditioning technique, and choice of polishing tool. Circuit density, pattern size, and wiring layout also affect the performance of a CMP planarization process. This paper presents the results of studies on CMP process window characterization for 0.35 micron process with 5 metal layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.525-526
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• 2007

Over-polishing is required to completely remove the material of top surface across whole wafer, in spite of a local dishing problem. This paper introduces the two-step CMP process using protective layer and high selectivity slurry, to reduce dishing amount and variation. The 30nm thick protective oxide layer was deposited on the pattern, and then polished with low selectivity slurry to partially remove the projected area while suppressing the removal rate of the recessed area. After the first step CMP process, high selectivity slurry was used to minimize the dishing amount and variation in pattern structure. Experimental result shows that two-step CMP process can be successfully applicable to reduce the dishing defect generated in over-polishing.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.2 no.4
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• pp.17-24
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• 2003

Chemical mechanical polishing(CMP) has been applied for planarization of topography after patterning process in semiconductor fabrication process. Tungsten CMP is necessary to build up interconnects of semiconductor device. But the tungsten dishing and the oxide erosion defects appear at end-point during tungsten CMP. It has been known that the generation of dishing and erosion is based on the over-polishing time, which is determined by pattern selectivity. Fixed abrasive pad takes advantage of decreasing the defects resulting flam reducing pattern selectivity because of the lower abrasive concentration. The manufacturing technique of fixed abrasive pad using hydrophilic polymers is introduced in this paper. For application to tungsten CMP, chemicals composed of oxidizer, catalyst, and acid were developed. In comparison of the general pad and slurry for tungsten CMP, the fixed abrasive pad and the chemicals resulted in appropriate performance in point of removal rate, uniformity, material selectivity and roughness.

• The Journal of Advanced Prosthodontics
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• v.14 no.6
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• pp.335-345
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• 2022

PURPOSE. This in vitro study aimed to evaluate the surface characteristics of a full veneer crown fabricated chairside (CS) from a (Y, Nb)-TZP zirconia block in response to conventional zirconia grinding and polishing. MATERIALS AND METHODS. Zirconia crowns (n = 40) were first prepared and divided into two groups of materials: Labside (LS) and CS, after which each specimen went through a five-step grinding and polishing procedure. Following each surface treatment, surface characteristics were analyzed using confocal laser microscopy (CLSM), average surface roughness (Ra) values were processed from the profile data through Gaussian filtering, and X-ray diffraction pattern analysis was performed to evaluate the monoclinic (M) phase content. Then, a representative specimen was selected for field-emission scanning electron microscopy (FE-SEM), followed by a final analysis of the roughness and X-ray diffraction of the specimens using the independent t-test and repeated measures analysis of variance (RM-ANOVA). RESULTS. In every group, polishing significantly reduced the Ra values (P < .001). There was no significant difference in Ra between the polished state CS and LS. Furthermore, CLSM and FE-SEM investigations revealed that even though grain exposure was visible in CS specimens throughout the as-delivered and ground states, the exposure was reduced after polishing. Moreover, while no phase transformation was visible in the LS, phase transformation was visible in CS after every surface treatment, with the M phase content of the CS group showing a significant reduction after polishing (P < .001). CONCLUSION. Within the limits of this study, clinically acceptable level of surface finishing of (Y, Nb)-TZP can be achieved after conventional zirconia polishing sequence.