Browse > Article

Chemical Mechanical Polishing Characteristics of BTO Thin Film for Vertical Sidewall Patterning of High-Density Memory Capacitor  

Ko, Pil-Ju (조선대학교 전기공학과)
Park, Sung-Woo (대불대학교 전기전자공학과)
Lee, Kang-Yeon (조선대학교 전기공학과)
Lee, Woo-Sun (조선대학교 전기공학과)
Seo, Yong-Jin (대불대학교)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.55, no.3, 2006 , pp. 116-121 More about this Journal
Abstract
Most high-k materials are well known not to be etched easily, Some problems such as low etch rate poor sidewall angle, plasma damage, and process complexity were emerged from the high-density DRAM fabrication. Chemical mechanical polishing (CMP) by a damascene process was proposed to pattern this high-k material was polished with some commercial silica slurry as a function of pH variation. Sufficient removal rate with adequate selectivity to realize the pattern mask of tera-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible. The planarization was also achieved for the subsequent multi-level processes. Our new CMP approach will provide a guideline for effective patterning of high-k material by CMP technique.
Keywords
CMP(Chemical Mechanical Polishing); $BTO(BaTiO_3)$; Sidewall Angle; Consumables; Damascene pH (Potential of Hydrogen); TEOS(Tera-Ethyl Ortho-Silicate);
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 I. Kim, K. Murella, and J. Schlueter, 'A detailed look at oxide CMP pad-to-pad consistency', Proceedings of the 2nd International CMP-MIC Conference, p. 335, 1997
2 P. Vitanov, A. Harizanova, T. Ivannova, D. Velkov, Zd. Raytcheva, 'Deposition, structure evolution and dielecrtrc properties of BaTiO3 and BaxSrl-xTiO3 thin films prepared by the sol-gel method. ', Vacuum, vol 69, issues 1-3, pp 371-377, December, 2002   DOI   ScienceOn
3 Y. Igarashi, K. Tani, M. Kasai, K. Ashikaga, 'Submicron Ferroelectric Capacitors Fabricated by Chemical Mechanical Polishing for High-Density Ferroelectric Memories', T. Tto, Jpn, J. Appl. phys. 39, p 1083, 2000   DOI
4 Yong-Jin Seo and Woo-Sun Lee, 'Chemical mechanical polishing of $Ba_{0.6}Sr_{0.4}TiO_3$ film prepared by sol - gel method', Microelectronic Engineering, Vol. 75, Issue 2, p. 149, 2004   DOI   ScienceOn
5 Yong-Jin Seo, Woo-Sun Lee, Jin-Seong Park and Sang-Yong Kim, 'Motor-Current-Based Real-Time End Point Detection of Shallow-Trench-Isolation Chemical Mechanical Polishing Process Using High-Selectivity Slurry', Japanese Journal of Applied Physics, Vol. 42, No. 10, p. 6396, 2003   DOI
6 Y. Morand, Microelectron. Eng. 50 (2000) 391   DOI   ScienceOn
7 Y. Xu, G. Huang, H.Long, Mater. Lett. 57 (2003) 3570   DOI   ScienceOn
8 C. S. Hwang, S. O. Park, C. S. Kang, H. J. Cho, H. K. Kang, S. T. Ahn, M. Y. Lee, J. Appl. Phys. 34 (1995) 5178   DOI
9 J. M. Steigerwald, S. P. Murarka, and R. J. Gutman, 'Chemical Mechanical Planarization of Microelectronic Materials', John Wiley & Sons, p. 40, 1997
10 M. R. Oliver, 'Chemical-Mechanical Planarization of Semiconductor Materials', Springer-Verlag, p. 239, 2004
11 Weidan Li, Dong Wook Shin, Minoru Tomozawa, Shyam p.Murarka, 'The effect of the polishing pad treatments on the chemical-mechanical polishing of $SiO_2$ films' Thin Solid Films, issues 1-2, vol 270, pp 601-606, December 1995   DOI   ScienceOn
12 Yong-Jin Seo, Sang-Yong Kim, Yeon-Ok Choi, Yong-Taek Oh and Woo-Sun Lee, 'Effects of slurry filter size on the chemical mechanical polishing (CMP) defect density', Materials Letters, Vol. 58, Issue 15, p. 2091, 2004   DOI   ScienceOn
13 Woo-Sun Lee, Sang-Youg Kim, Youg-Jin Seo, Jong-Kook Lee, 'An Optimization of Tungsten Plug Chemical Mechanical Polishing (CMP) using Different Consumables', Journal of Materials Science Materials in Electronics, Vol. 12, No.1, p. 63, 2001   DOI   ScienceOn
14 G. B. Basim, J. J. Adler, U. Mahajan, R. K. Singh, and B. M. Moudgil, 'Effect of particle size of chemical mechanical polishing with minimal defects', J. Electrochem. Soc., Vol. 147, Iss. 9, p. 3523, 2000   DOI   ScienceOn