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Chemical Mechanical Polishing Characteristics of BTO Thin Film for Vertical Sidewall Patterning of High-Density Memory Capacitor  

Ko, Pil-Ju (조선대학교 전기공학과)
Park, Sung-Woo (대불대학교 전기전자공학과)
Lee, Kang-Yeon (조선대학교 전기공학과)
Lee, Woo-Sun (조선대학교 전기공학과)
Seo, Yong-Jin (대불대학교)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.55, no.3, 2006 , pp. 116-121 More about this Journal
Abstract
Most high-k materials are well known not to be etched easily, Some problems such as low etch rate poor sidewall angle, plasma damage, and process complexity were emerged from the high-density DRAM fabrication. Chemical mechanical polishing (CMP) by a damascene process was proposed to pattern this high-k material was polished with some commercial silica slurry as a function of pH variation. Sufficient removal rate with adequate selectivity to realize the pattern mask of tera-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible. The planarization was also achieved for the subsequent multi-level processes. Our new CMP approach will provide a guideline for effective patterning of high-k material by CMP technique.
Keywords
CMP(Chemical Mechanical Polishing); $BTO(BaTiO_3)$; Sidewall Angle; Consumables; Damascene pH (Potential of Hydrogen); TEOS(Tera-Ethyl Ortho-Silicate);
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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