Development and Evaluation of Fixed Abrasive Pad in Tungsten CMP

고정입자패드를 이용한 텅스텐 CMP 개발 및 평가

  • 박범영 (부산대학교 대학원 정밀기계공학과) ;
  • 김호윤 ;
  • 김구연 (부산대학교 대학원 정밀기계공학과) ;
  • 정해도 (부산대학교 정밀정형 및 금형가공 연구소)
  • Published : 2003.12.30

Abstract

Chemical mechanical polishing(CMP) has been applied for planarization of topography after patterning process in semiconductor fabrication process. Tungsten CMP is necessary to build up interconnects of semiconductor device. But the tungsten dishing and the oxide erosion defects appear at end-point during tungsten CMP. It has been known that the generation of dishing and erosion is based on the over-polishing time, which is determined by pattern selectivity. Fixed abrasive pad takes advantage of decreasing the defects resulting flam reducing pattern selectivity because of the lower abrasive concentration. The manufacturing technique of fixed abrasive pad using hydrophilic polymers is introduced in this paper. For application to tungsten CMP, chemicals composed of oxidizer, catalyst, and acid were developed. In comparison of the general pad and slurry for tungsten CMP, the fixed abrasive pad and the chemicals resulted in appropriate performance in point of removal rate, uniformity, material selectivity and roughness.

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