• Design & Manufacturing
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• v.11 no.2
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• pp.51-56
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• 2017

Nitinol, a shape memory alloy (SMA), is manufactured from titanium and nickel and it used in various fields such as electrical applications, micro sensors. It is also recommended as a material in medical for implant because it has excellent organic compatibility. Nitinol is intended to be inserted into the human body, products require a high-quality surface and low residual stress. To overcome this problems, explore electrolyte polishing (EP) is being explored that may be appropriate for use with nitinol. EP is a particularly useful machining method because, as a non contact machining method, it produces neither machining heat nor internal stress in the machined materials. Sandpaper polishing is also useful machining method because, as a contact machining method, it can easily good surface roughness in the machined materials. The electrolyte polishing (EP) process has an effect of improving the surface roughness as well as the film polishing process, but has a characteristic that the residual stress is hardly generated because the work hardened layer is not formed on the processed surface. The sandpaper polishing process has the effect of improving the surface roughness but the residual stress remains in the surface. We experimented with three conditions of polishing process. First condition is the conventional polishing. Second condition is the electrochemical polishing(EP). And Last condition is a mixing process with the conventional polishing and the EP. Surface roughness and residual stress of the nitinol before a polishing process were $0.474{\mu}mRa$, -45.38MPa. Surface roughness and residual stress of the nitinol after mixing process of the conventional polishing and the EP were $1.071{\mu}mRa$, -143.157MPa. Surface roughness and residual stress of the nitinol after conventional polishing were $0.385{\mu}mRa$ and -205.15MPa. Surface roughness and residual stress of sandpaper and EP nitinol were $1.071{\mu}mRa$, -143.157MPa. The result shows that the EP process is a residual stress free process that eliminates the residual stress on the surface while eliminating the deformed layer remaining on the surface through composite surface machining rather than single surface machining. The EP process can be used for biomaterials such as nitinol and be applied to polishing of wafers and various fields.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.219-225
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• 2005

To investigate the effects of slurry temperature on the chemical mechanical polishing(CMP) performance of oxide film with silica and ceria slurries, we have studied slurry properties as a function of different slurry temperature. Also, the effects of each input parameter of slurry on the oxide CMP characteristics were investigated. The pH showed a slight tendency of decrease, the conductivity in slurries showed an increased tendency, the mean particle size in slurry decreased, and the zeta potential of slurry decreased with temperature. The removal rates significantly increased and maintained at the specific levels over 4$0^{\circ}C$. The better surface morphology of oxide films could be obtained at 40 $^{\circ}C$ of silica slurry and at 90 $^{\circ}C$ of ceria slurry. It is found that the CMP performance of oxide film could be significantly improved or controlled by change of slurry temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.3
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• pp.116-121
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• 2006

Most high-k materials are well known not to be etched easily, Some problems such as low etch rate poor sidewall angle, plasma damage, and process complexity were emerged from the high-density DRAM fabrication. Chemical mechanical polishing (CMP) by a damascene process was proposed to pattern this high-k material was polished with some commercial silica slurry as a function of pH variation. Sufficient removal rate with adequate selectivity to realize the pattern mask of tera-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible. The planarization was also achieved for the subsequent multi-level processes. Our new CMP approach will provide a guideline for effective patterning of high-k material by CMP technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.39-42
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• 2002

Recently, CMP (chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of reused silica slurry in order to reduce the costs of CMP slurry. The post-CMP thickness and within-wafer non-uniformity(WIWNU) were measured as a function of different slurry composition. As a experimental result, the performance of reused slurry with annealed silica abrasive of 2 wt% contents was showed high removal rate and low non-uniformity. Therefore, we propose two-step CMP process as follows In the first-step CMP, we can polish the thick and rough film surface using remaked slurry, and then, in the second-step CMP, we can polish the thin film and fine pattern using original slurry. In summary, we can expect the saving of high costs of slurry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.759-764
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• 2003

Recently, CMP (chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of roused silica slurry in order to reduce the costs of CMP slurry. The post-CMP thickness and within-wafer non-uniformity (WIWNU) wore measured as a function of different slurry composition. As an experimental result, the performance of reused slurry with annealed silica abrasive of 2 wt％ contents was showed high removal rate and low non-uniformity. Therefore, we propose two-step CMP process as follows , In tile first-step CMP, we can polish the thick and rough film surface using remaked slurry, and then, in the second-step CMP, we can polish the thin film and fine pattern using original slurry. In summary, we can expect the saying of high costs of slurry.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.6
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• pp.291-296
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• 2006

In this study, the sputtered BTO film was polished by CMP process with the self-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS), respectively. The removal rate of BTO ($BaTiO_3$) thin film using the $BaTiO_3$-mixed abrasive slurry (BTO-MAS) was higher than that using the $TiO_2$-mixed abrasives slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%) below 5% was obtained in each abrsive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.35-37
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• 2005

100, 200nm 크기의 colloidal silica 각각에 나노 ceria 입자를 수열합성법으로 코팅하였다. Colloidal silica 입자에 ceria를 코팅 시 slurry의 pH조절과 수열처리에 이용하여 silica에 ceria가 코팅됨을 TEM과 zeta-potential을 이용하여 확인하였다. 연마 슬러리의 분산 안정성과 연마효율을 높이기 위하여 슬러리의 pH 는 9로 하였으며, 이때의 zeta-potential 값은 -25 mV이었다. 1 wt%로 제조된 연마슬러리를 이용하여, 4 inch $SiO_2$, $Si_3N_4$ wafer를 압력변화에 따른 연마특성을 관찰 하였다. Ceria coated colloidal silica 100 nm, 200 nm와 commercial한 $CeO_2$입자를 연마압력 6 psi로 oxide film을 연마한 결과 연마율이 각각 2490 ${\AA}/min$, 4200 ${\AA}/min$, 4300 ${\AA}/min$으로 측정되었다. 또한 $SiO_2$, $Si_3N_4$ film의 6 psi압력에서 ceria coated colloidal silica 100 nm, 200 nm와 commercial 한 $CeO_2$입자의 선택비는 3, 3.8, 6.7 이었다. 입자크기가 클수록 연마율이 높으며, Preston equation을 따라 연마 압력과 연마율이 비례하였다.

• Journal of the Optical Society of Korea
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• v.17 no.1
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• pp.1-4
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• 2013

For the conventionally polished fused silica substrate, an around 100 nm depth redeposition polishing layer was formed on the top of surface. Polishing compounds, densely embedded in the redeposition polishing layer were the dominant factor that limited the laser induced damage threshold (LIDT) of transmission elements in nanosecond laser systems. Chemical etching, super-precise polishing and ion beam etching were employed in different ways to eliminate these absorbers from the substrate. After that, Antireflection (AR) coatings were deposited on these substrates in the same batch and then tested by 1064 nm nano-pulse laser. It was found that among these techniques only the ion beam etching method, which can effectively remove the polishing compound and did not induce extra absorbers during the disposal process, can successfully improve the LIDT of AR coatings.

• Tribology and Lubricants
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• v.38 no.6
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• pp.247-254
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• 2022

Chemical mechanical polishing (CMP) is a hybrid surface-polishing process that utilizes both mechanical and chemical energy. However, the recently emerging semiconductor substrate and thin film materials are challenging to process using the existing CMP. Therefore, previous researchers have conducted studies to increase the material removal rate (MRR) of CMP. Most materials studied to improve MRR have high hardness and chemical stability. Methods for enhancing the material removal efficiency of CMP include additional provision of electric, thermal, light, mechanical, and chemical energies. This study aims to introduce research trends on CMP using ultraviolet (UV) light to these methods to improve the material removal efficiency of CMP. This method, photocatalysis-assisted chemical mechanical polishing (PCMP), utilizes photocatalytic oxidation using UV light. In this study, the target materials of the PCMP application include SiC, GaN, GaAs, and Ru. This study explains the photocatalytic reaction, which is the basic principle of PCMP, and reviews studies on PCMP according to materials. Additionally, the researchers classified the PCMP system used in existing studies and presented the course for further investigation of PCMP. This study aims to aid in understanding PCMP and set the direction of future research. Lastly, since there have not been many studies on the tribology characteristics in PCMP, research on this is expected to be required.

• Journal of the korean academy of Pediatric Dentistry
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• v.33 no.4
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• pp.633-642
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• 2006

This study evaluated the surface changes such as surface average roughness(RA), surface free energy(SFE) and wear depth among groups treated with surface penetrating sealant(Fortify, Biscover), non treated polishing group before and after tooth-brushing, analyzing the influence of the sealants in filling of surface microdefects formed during the finishing and polishing procedures of composite resin. Results were as follow(p= 0.05) : 1. Ra was increased Biscover. Fortify and Polishing group. Before abrasion and in 6 months, all groups were statistically significant. In 1 month, 2 months and 3 months no statistical difference was noticed between Fortify and Biscover 2. SFE of Polishig and Biscover group. Fortify and Biscover group were statistically significant before abrasion. SFE of Polishing and Fortify group was statistically significant in 1 month. No statistical difference was noticed among groups in 2 months. SFE of Fortify and Biscover group was statistically significant in 3 months. Polishing and Fortify group, Fortify and Biscover group were statistically significant in 6 months. 3, Wear rate between Polishing and Fortify group was statistically significant in only 1 month. Wear rate between Polishing and Biscover group was statistically different in each month except for 2 month and so it was between Fortify and Biscover group. Considering film thickness of Fortify and Biscover, Fortify almost discappeared after 2 months and Biscover did after 6 months.