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http://dx.doi.org/10.4313/JKEM.2005.18.3.219

Polishing Properties by Change of Slurry Temperature in Oxide CMP  

Ko, Pil-Ju (조선대학교 전기공학과)
Park, Sung-Woo (대불대학교 전기전자공학과)
Kim, Nam-Hoon (조선대학교 에너지자원신기술연구소)
Seo, Yong-Jin (대불대학교 전기전자공학과)
Lee, Woo-Sun (조선대학교 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.3, 2005 , pp. 219-225 More about this Journal
Abstract
To investigate the effects of slurry temperature on the chemical mechanical polishing(CMP) performance of oxide film with silica and ceria slurries, we have studied slurry properties as a function of different slurry temperature. Also, the effects of each input parameter of slurry on the oxide CMP characteristics were investigated. The pH showed a slight tendency of decrease, the conductivity in slurries showed an increased tendency, the mean particle size in slurry decreased, and the zeta potential of slurry decreased with temperature. The removal rates significantly increased and maintained at the specific levels over 4$0^{\circ}C$. The better surface morphology of oxide films could be obtained at 40 $^{\circ}C$ of silica slurry and at 90 $^{\circ}C$ of ceria slurry. It is found that the CMP performance of oxide film could be significantly improved or controlled by change of slurry temperature.
Keywords
Chemical mechanical polishing(CMP); Slurry temperature; Silica slurry; Ceria slurry;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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