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Chemical Mechanical Polishing Characteristics of BTO Films using $TiO_2$- and $BaTiO_3$-Mixed Abrasive Slurry (MAS)  

Lee, Woo-Sun (조선대학교 전기공학과)
Seo, Yong-Jin (대불대학교)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.55, no.6, 2006 , pp. 291-296 More about this Journal
Abstract
In this study, the sputtered BTO film was polished by CMP process with the self-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS), respectively. The removal rate of BTO ($BaTiO_3$) thin film using the $BaTiO_3$-mixed abrasive slurry (BTO-MAS) was higher than that using the $TiO_2$-mixed abrasives slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%) below 5% was obtained in each abrsive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).
Keywords
CMP (Chemical Mechanical Polishing); BTO ($BaTiO_3$); MAS (Mixed Abrasive Slurry);
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
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