• 한국전산유체공학회:학술대회논문집
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• 1998.11a
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• pp.160-166
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• 1998

In this paper, incompressible two-dimensional Navier-Stokes equations are numerically solved for the study of steady laminar flow around a body with the wall effect. A second-order finite difference method is used for the spatial discretization on the nonstaggered grid system and the 4-stage Runge-Kutta scheme for the numerical integration in time. The pressure field is obtained by solving the pressure-Poisson equation with the Neumann boundary condition. To investigate the wall effect, numerical computations are carried out for the NACA 0012 section at the various blockage ratios. The pressure and skin friction on the foil surface, velocity pronto in its wake and drag coefficient are investigated as functions of the blockage ratio.

• Journal of the Korean Data and Information Science Society
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• v.16 no.4
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• pp.1017-1026
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• 2005

We consider the problem of modeling count data where the observation period is determined by the survival time of the individual under study. We assume random effects or frailty model to allow for a possible association between the death times and the counts. We assume that, given a random effect, the death times follow a Weibull distribution with a rate that depends on some covariates. For the counts, given the random effect, a Poisson process is assumed with the intensity depending on time and the covariates. A gamma model is assumed for the random effect. Maximum likelihood estimators of the model parameters are obtained. The model is applied to data set of patients with breast cancer who received a bone marrow transplant. A model for the time to death and the number of supportive transfusions a patient received is constructed and consequences of the model are examined.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.209-213
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• 2007

The MOS gate capacitance model presented here is determined by directly solving the coupled Poisson equations on the poly and silicon sides, and includes the polysilicon (poly) gate depletion effect. Our compact gate capacitance model exhibits an excellent fit with measured data and parameter values extracted from data are physically acceptable. The data are collected from 0.5, 0.35, 0.25 and $0.18{\mu}m$ CMOS technologies.

• International Journal of Aeronautical and Space Sciences
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• v.18 no.3
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• pp.467-473
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• 2017

This paper focuses on the investigation of three-dimensional (3D) warping effect on the stiffness constants of composite beams with closed section profiles. A finite element (FE) cross-sectional analysis is developed based on the Reissner's multifield variational principle. The 3D in-plane and out-of-plane warping displacements, and sectional stresses are approximated as linear functions of generalized sectional stress resultants at the global level and as FE shape functions at the local sectional level. The classical elastic couplings are taken into account which include transverse shear and Poisson deformation effects. A generalized Timoshenko level $6{\times}6$ stiffness matrix is computed for closed section composite beams with and without warping. The effect of neglecting the 3D warping on stiffness constants is shown to be significant indicating large errors as high as 93.3%.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.1
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• pp.123-128
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• 2014

This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.

• Journal of the Society of Naval Architects of Korea
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• v.37 no.2
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• pp.70-76
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• 2000

A numerical study on the viscous flow around a 2-dimensional circulation control foil is carried out for application on the field of naval architecture and ocean engineering. The governing equations are the RANS and the continuity equations. The equations are discretized by finite difference method and MAC method and the pressure poisson equation is calculate by a SOR method and an O-type non-staggered boundary fitted coordinate system which is overlapped near the slot is used to improve the numerical accuracy. Turbulence is approximated by a modified Baldwin-Lomax turbulence model. In the present paper, the Coanda effect on a 2-dimensional foil of a 20% thickness ellipse with modified rounded trailing edge has been numerically studied. The change in drag and lift of the foil with various jet momentums are calculated and compared to the experimental results to show good agreements.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.1-7
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• 2004

We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.753-756
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• 2013

This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.9
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• pp.2015-2020
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• 2012

The subthreshold characteristics has been analyzed to investigate the effect of two gate in Double Gate MOSFET using impact factor based on scaling theory. The charge distribution of Gaussian function validated in previous researches has been used to obtain potential distribution in Poisson equation. The potential distribution was used to investigate the short channel effects such as threshold voltage roll-off, subthreshold swings and drain induced barrier lowering by varying impact factor for scaling factor. The impact factor of 0.1~1.0 for channel length and 1.0~2.0 for channel thickness are used to fit structural feature of DGMOSFET. The simulation result showed that the subthreshold swings are mostly effected by impact factor but are nearly constant for scaling factors. And threshold voltage roll-off and drain induced barrier lowering are also effected by both impact factor and scaling factor.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.15-30
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• 2004

In this paper, an analytical modeling for the dark and photo-current characteristics of a buried-gate short- channel GaAs MESFET is presented. The presented model shows that the increase of drain current under illumination is largely due to not the increase of photo-conductivity in the neutral region but the narrowing effect of the depletion layer width. The carrier density profile within the neutral region is derived from solving the carrier continuity equation one-dimensionally. In deriving the photo-generated current, we assume that the photo-current is compensated with the thermionic emission current at the gate-channel interface. Moreover, the two-dimensional Poisson's equation is solved by taking into account the drain-induced longitudinal field effect. In conclusion, the proposed model seems to provide a reasonable explanation for the dark and photo current characteristics in a unified manner.