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http://dx.doi.org/10.6109/jkiice.2014.18.1.123

Analysis of Subthreshold Current Deviation for Channel Dimension of Double Gate MOSFET  

Jung, Hakkee (Department of Electronic Engineering, Kunsan National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.18, no.1, 2014 , pp. 123-128 More about this Journal
Abstract
This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.
Keywords
subthreshold current; Gaussian function; short channel effect; Poisson equation; channel dimension;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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